Integrated photodetector-amplifier using a-Si p-i-n photodiodes and poly-Si thin-film transistors

Noriyoshi Yamauchi, Yasushi Inaba, Masamichi Okamura

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We propose a photodetector-amplifier circuit consisting of a bridge photodetector circuit and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. A test circuit was fabricated using a-Si p-i-n photodiodes and poly-Si thin-film transistors on a quartz substrate. A clear effect of the differential amplifier was demonstrated in the test circuit. It is shown that the circuit performance can be controlled by changing the bias current of the differential amplifier. With a relatively low bias current of the order of 10-11 A, the circuit works digitally with output voltages either close to 0 V or VDD. The power consumption of the circuit is approximately 60 μW which is low enough for use in two-dimensional arrays.

Original languageEnglish
Pages (from-to)319-321
Number of pages3
JournalIEEE Photonics Technology Letters
Volume5
Issue number3
DOIs
Publication statusPublished - 1993 Mar
Externally publishedYes

Fingerprint

Thin film transistors
Photodetectors
Photodiodes
Polysilicon
photodiodes
photometers
transistors
amplifiers
differential amplifiers
Networks (circuits)
Differential amplifiers
thin films
Bias currents
Quartz
Substrates
CMOS
Electric power utilization
quartz
output
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics

Cite this

Integrated photodetector-amplifier using a-Si p-i-n photodiodes and poly-Si thin-film transistors. / Yamauchi, Noriyoshi; Inaba, Yasushi; Okamura, Masamichi.

In: IEEE Photonics Technology Letters, Vol. 5, No. 3, 03.1993, p. 319-321.

Research output: Contribution to journalArticle

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