Integration of eight-channel directly modulated membrane-laser array and SiN AWG multiplexer on Si

Hidetaka Nishi, Takuro Fuji, Nikolaos Panteleimon Diamantopoulos, Koji Takeda, Erina Kanno, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Eight-channel 56-Gbit/s direct four-level pulse-ampli-tude modulation is demonstrated using a 1.3-μm wavelength-division-multiplexing (WDM) photonic integrated circuit (PIC) transmitter, consisting of membrane distributed-reflector lasers heterogeneously fabricated on Si and a SiN arrayed-waveguide-grating multiplexer. Direct bonding, epitaxial regrowth, and low-temperature SiN-waveguide fabrication technologies are employed for the integration on Si. Using a nonlinear equalizer, we operated the fabricated WDM PIC transmitter with a low power consumption of 403 fJ/bit for overall 448 Gbit/s signals. The total eight-channel bit-error rate was 2.7 × 10 -3 , which is less than the 7%-overhead hard-decision forward-error-correction limit.

Original languageEnglish
Article number8533353
Pages (from-to)266-273
Number of pages8
JournalJournal of Lightwave Technology
Volume37
Issue number2
DOIs
Publication statusPublished - 2019 Jan 15
Externally publishedYes

Keywords

  • Arrayed-waveguide grating multiplexer
  • direct bonding
  • heterogeneous integration
  • semiconductor lasers
  • SiN waveguide
  • wavelength division multiplexing

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Nishi, H., Fuji, T., Diamantopoulos, N. P., Takeda, K., Kanno, E., Kakitsuka, T., Tsuchizawa, T., Fukuda, H., & Matsuo, S. (2019). Integration of eight-channel directly modulated membrane-laser array and SiN AWG multiplexer on Si. Journal of Lightwave Technology, 37(2), 266-273. [8533353]. https://doi.org/10.1109/JLT.2018.2873742