Integration of GaN-SiC and GaN-diamond by surface activated bonding methods

Fengwen Mu, Tadatomo Suga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Integration of GaN with SiC and diamond is one solution for the heat dissipation of high-power and high-frequency GaN device. In this research, both of GaN-SiC integration and GaN-diamond integration have been realized by surface activated bonding methods at room temperature. The bonding interfaces were investigated to understand the bonding mechanisms.

Original languageEnglish
Title of host publication2019 International Conference on Electronics Packaging, ICEP 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages198-199
Number of pages2
ISBN (Electronic)9784990218867
DOIs
Publication statusPublished - 2019 Apr 1
Event2019 International Conference on Electronics Packaging, ICEP 2019 - Niigata, Japan
Duration: 2019 Apr 172019 Apr 20

Publication series

Name2019 International Conference on Electronics Packaging, ICEP 2019

Conference

Conference2019 International Conference on Electronics Packaging, ICEP 2019
CountryJapan
CityNiigata
Period19/4/1719/4/20

Keywords

  • diamond
  • GaN device
  • integration
  • SiC
  • surface activation bonding

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys

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  • Cite this

    Mu, F., & Suga, T. (2019). Integration of GaN-SiC and GaN-diamond by surface activated bonding methods. In 2019 International Conference on Electronics Packaging, ICEP 2019 (pp. 198-199). [8733419] (2019 International Conference on Electronics Packaging, ICEP 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ICEP.2019.8733419