TY - JOUR
T1 - Interface properties of the two step oxide layers by UV light excited ozone silicon oxidation and chemical vapor deposition (CVD)-SiO2 film
AU - Kameda, Naoto
AU - Nishiguchi, Tetsuya
AU - Morikawa, Yoshiki
AU - Kekura, Mitsuru
AU - Ushiyama, Tomoharu
AU - Nonaka, Hidehiko
AU - Ichimura, Shingo
PY - 2010
Y1 - 2010
N2 - SiO2 film was made on Si(100) by two-step film growth process at 100°C to improve the interface properties. The first part of the process is the direct Si oxidation using UV-excited ozone (O (1D) ), which is generated by the UV irradiation to high concentrated (> 90%) ozone gas. In the second part, O(1D) and Hexamethyldisilazane chemical vopor deposition (CVD) (O(1D)-CVD) process is used. The SiO2 film thickness of the direct Si oxidation for 10 min. in the two-step SiO2 film was estimated to be about 3.2 nm from the etching rate in change a buffered HF solution. Interface trap density Dit of the two-step SiO2 film with direct Si oxidation of 10 min. is almost equal to that of Si direct oxidation film alone. This result indicates that two-step oxidation process can be applied for the practical fabrication.
AB - SiO2 film was made on Si(100) by two-step film growth process at 100°C to improve the interface properties. The first part of the process is the direct Si oxidation using UV-excited ozone (O (1D) ), which is generated by the UV irradiation to high concentrated (> 90%) ozone gas. In the second part, O(1D) and Hexamethyldisilazane chemical vopor deposition (CVD) (O(1D)-CVD) process is used. The SiO2 film thickness of the direct Si oxidation for 10 min. in the two-step SiO2 film was estimated to be about 3.2 nm from the etching rate in change a buffered HF solution. Interface trap density Dit of the two-step SiO2 film with direct Si oxidation of 10 min. is almost equal to that of Si direct oxidation film alone. This result indicates that two-step oxidation process can be applied for the practical fabrication.
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U2 - 10.3131/jvsj2.53.230
DO - 10.3131/jvsj2.53.230
M3 - Article
AN - SCOPUS:77953587470
SN - 1882-2398
VL - 53
SP - 230
EP - 233
JO - Shinku/Journal of the Vacuum Society of Japan
JF - Shinku/Journal of the Vacuum Society of Japan
IS - 3
ER -