Interface properties of the two step oxide layers by UV light excited ozone silicon oxidation and chemical vapor deposition (CVD)-SiO2 film

Naoto Kameda, Tetsuya Nishiguchi, Yoshiki Morikawa, Mitsuru Kekura, Tomoharu Ushiyama, Hidehiko Nonaka, Shingo Ichimura

Research output: Contribution to journalArticle

Abstract

SiO2 film was made on Si(100) by two-step film growth process at 100°C to improve the interface properties. The first part of the process is the direct Si oxidation using UV-excited ozone (O (1D) ), which is generated by the UV irradiation to high concentrated (> 90%) ozone gas. In the second part, O(1D) and Hexamethyldisilazane chemical vopor deposition (CVD) (O(1D)-CVD) process is used. The SiO2 film thickness of the direct Si oxidation for 10 min. in the two-step SiO2 film was estimated to be about 3.2 nm from the etching rate in change a buffered HF solution. Interface trap density Dit of the two-step SiO2 film with direct Si oxidation of 10 min. is almost equal to that of Si direct oxidation film alone. This result indicates that two-step oxidation process can be applied for the practical fabrication.

Original languageEnglish
Pages (from-to)230-233
Number of pages4
JournalJournal of the Vacuum Society of Japan
Volume53
Issue number3
DOIs
Publication statusPublished - 2010 Jun 21
Externally publishedYes

Fingerprint

Ozone
Silicon
Ultraviolet radiation
Oxides
ozone
Chemical vapor deposition
vapor deposition
Oxidation
oxidation
oxides
silicon
Film growth
Film thickness
Etching
film thickness
Gases
etching
traps
Irradiation
Fabrication

ASJC Scopus subject areas

  • Spectroscopy
  • Materials Science(all)
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Interface properties of the two step oxide layers by UV light excited ozone silicon oxidation and chemical vapor deposition (CVD)-SiO2 film. / Kameda, Naoto; Nishiguchi, Tetsuya; Morikawa, Yoshiki; Kekura, Mitsuru; Ushiyama, Tomoharu; Nonaka, Hidehiko; Ichimura, Shingo.

In: Journal of the Vacuum Society of Japan, Vol. 53, No. 3, 21.06.2010, p. 230-233.

Research output: Contribution to journalArticle

Kameda, Naoto ; Nishiguchi, Tetsuya ; Morikawa, Yoshiki ; Kekura, Mitsuru ; Ushiyama, Tomoharu ; Nonaka, Hidehiko ; Ichimura, Shingo. / Interface properties of the two step oxide layers by UV light excited ozone silicon oxidation and chemical vapor deposition (CVD)-SiO2 film. In: Journal of the Vacuum Society of Japan. 2010 ; Vol. 53, No. 3. pp. 230-233.
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AU - Nonaka, Hidehiko

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