Interface properties of the two step oxide layers by UV light excited ozone silicon oxidation and chemical vapor deposition (CVD)-SiO2 film

Naoto Kameda, Tetsuya Nishiguchi, Yoshiki Morikawa, Mitsuru Kekura, Tomoharu Ushiyama, Hidehiko Nonaka, Shingo Ichimura

Research output: Contribution to journalArticle

Abstract

SiO2 film was made on Si(100) by two-step film growth process at 100°C to improve the interface properties. The first part of the process is the direct Si oxidation using UV-excited ozone (O (1D) ), which is generated by the UV irradiation to high concentrated (> 90%) ozone gas. In the second part, O(1D) and Hexamethyldisilazane chemical vopor deposition (CVD) (O(1D)-CVD) process is used. The SiO2 film thickness of the direct Si oxidation for 10 min. in the two-step SiO2 film was estimated to be about 3.2 nm from the etching rate in change a buffered HF solution. Interface trap density Dit of the two-step SiO2 film with direct Si oxidation of 10 min. is almost equal to that of Si direct oxidation film alone. This result indicates that two-step oxidation process can be applied for the practical fabrication.

Original languageEnglish
Pages (from-to)230-233
Number of pages4
JournalJournal of the Vacuum Society of Japan
Volume53
Issue number3
DOIs
Publication statusPublished - 2010 Jun 21
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation
  • Surfaces and Interfaces
  • Spectroscopy

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