TY - JOUR
T1 - Interfacial structures and selective growth of diamond particles formed by plasma-assisted CVD
AU - MA, Jing sheng
AU - Kawarada, Hiroshi
AU - Yonehara, Takao
AU - Suzuki, Jun ichi
AU - Wei, Jin
AU - Yokota, Yoshihiro
AU - Mori, Hirotaro
AU - Fujita, Hiroshi
AU - Hiraki, Akio
N1 - Funding Information:
The authors wish to acknowledge the partial support of a Grant-in-Aid for Developing Research (63850008)f rom the Ministry of Education, Science and Culture of Japan.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 1990/1
Y1 - 1990/1
N2 - Internal and interfacial observations of diamond particles formed by plasma-assisted CVD have been carried out using an ultra-high-voltage transmission electron microscope from especially cross-sectional view. Diamond particles deposited at lower CH4 concentrations are faceted polyhedra, and line defects composed of micro-twin lamellae are found to emerge from the base center area, indicating that diamond nucleates at a site, then grows to form the polyhedron. Based on these observations, a nucleation control study has been carried out. SiO2-patterned Si substrate is firstly roughened by abrasive powders, then irradiated by an Ar beam at a certain angle. After deposition on this substrate using plasma-assisted CVD, diamond particles have been selectively grown on particular positions on the SiO2 dots.
AB - Internal and interfacial observations of diamond particles formed by plasma-assisted CVD have been carried out using an ultra-high-voltage transmission electron microscope from especially cross-sectional view. Diamond particles deposited at lower CH4 concentrations are faceted polyhedra, and line defects composed of micro-twin lamellae are found to emerge from the base center area, indicating that diamond nucleates at a site, then grows to form the polyhedron. Based on these observations, a nucleation control study has been carried out. SiO2-patterned Si substrate is firstly roughened by abrasive powders, then irradiated by an Ar beam at a certain angle. After deposition on this substrate using plasma-assisted CVD, diamond particles have been selectively grown on particular positions on the SiO2 dots.
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U2 - 10.1016/0169-4332(89)90124-4
DO - 10.1016/0169-4332(89)90124-4
M3 - Article
AN - SCOPUS:3643075167
VL - 41-42
SP - 572
EP - 579
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - C
ER -