Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique

A. Matsushita, A. Matsumoto, K. Akahane, Yuichi Matsushima, Katsuyuki Utaka

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO2 sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.

    Original languageEnglish
    Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
    DOIs
    Publication statusPublished - 2013
    Event2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013 - Kobe
    Duration: 2013 May 192013 May 23

    Other

    Other2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013
    CityKobe
    Period13/5/1913/5/23

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    Keywords

    • InAs/InGaAlAs
    • intermixing
    • PL wavelength
    • quantum dots

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

    Cite this

    Matsushita, A., Matsumoto, A., Akahane, K., Matsushima, Y., & Utaka, K. (2013). Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials [6562629] https://doi.org/10.1109/ICIPRM.2013.6562629