Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique

A. Matsushita, A. Matsumoto, K. Akahane, Y. Matsushima, K. Utaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO2 sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.

Original languageEnglish
Title of host publication2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013
DOIs
Publication statusPublished - 2013 Aug 26
Event2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013 - Kobe, Japan
Duration: 2013 May 192013 May 23

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013
CountryJapan
CityKobe
Period13/5/1913/5/23

Keywords

  • InAs/InGaAlAs
  • PL wavelength
  • intermixing
  • quantum dots

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Matsushita, A., Matsumoto, A., Akahane, K., Matsushima, Y., & Utaka, K. (2013). Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique. In 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013 [6562629] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2013.6562629