Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique

A. Matsushita, A. Matsumoto, K. Akahane, Yuichi Matsushima, Katsuyuki Utaka

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO2 sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.

    Original languageEnglish
    Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
    DOIs
    Publication statusPublished - 2013
    Event2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013 - Kobe
    Duration: 2013 May 192013 May 23

    Other

    Other2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013
    CityKobe
    Period13/5/1913/5/23

    Fingerprint

    Semiconductor quantum dots
    Sputtering
    Monolithic integrated circuits
    Annealing
    Substrates
    Temperature
    indium arsenide

    Keywords

    • InAs/InGaAlAs
    • intermixing
    • PL wavelength
    • quantum dots

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

    Cite this

    Matsushita, A., Matsumoto, A., Akahane, K., Matsushima, Y., & Utaka, K. (2013). Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials [6562629] https://doi.org/10.1109/ICIPRM.2013.6562629

    Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique. / Matsushita, A.; Matsumoto, A.; Akahane, K.; Matsushima, Yuichi; Utaka, Katsuyuki.

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2013. 6562629.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Matsushita, A, Matsumoto, A, Akahane, K, Matsushima, Y & Utaka, K 2013, Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials., 6562629, 2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013, Kobe, 13/5/19. https://doi.org/10.1109/ICIPRM.2013.6562629
    Matsushita A, Matsumoto A, Akahane K, Matsushima Y, Utaka K. Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2013. 6562629 https://doi.org/10.1109/ICIPRM.2013.6562629
    Matsushita, A. ; Matsumoto, A. ; Akahane, K. ; Matsushima, Yuichi ; Utaka, Katsuyuki. / Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2013.
    @inproceedings{81c9a298a2464be6b84bb8483c7f71af,
    title = "Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique",
    abstract = "We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO2 sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.",
    keywords = "InAs/InGaAlAs, intermixing, PL wavelength, quantum dots",
    author = "A. Matsushita and A. Matsumoto and K. Akahane and Yuichi Matsushima and Katsuyuki Utaka",
    year = "2013",
    doi = "10.1109/ICIPRM.2013.6562629",
    language = "English",
    isbn = "9781467361309",
    booktitle = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

    }

    TY - GEN

    T1 - Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique

    AU - Matsushita, A.

    AU - Matsumoto, A.

    AU - Akahane, K.

    AU - Matsushima, Yuichi

    AU - Utaka, Katsuyuki

    PY - 2013

    Y1 - 2013

    N2 - We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO2 sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.

    AB - We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO2 sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.

    KW - InAs/InGaAlAs

    KW - intermixing

    KW - PL wavelength

    KW - quantum dots

    UR - http://www.scopus.com/inward/record.url?scp=84882411623&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84882411623&partnerID=8YFLogxK

    U2 - 10.1109/ICIPRM.2013.6562629

    DO - 10.1109/ICIPRM.2013.6562629

    M3 - Conference contribution

    AN - SCOPUS:84882411623

    SN - 9781467361309

    BT - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

    ER -