In this study, we investigated quantum dot intermixing (QDI) for InAs/InGaAlAs highly stacked QDs on an InP(311)B substrate with low-temperature annealing at 650 °C in order to realize integrated photonic devices with QDs and passive waveguides. In particular, we adopted the method of introducing point defects by ICP-RIE to realize a blue shift of the PL peak wavelength by about 150 nm. Moreover, we successfully fabricated double micro-ring resonators by QDI. The output power contrasts of the devices were found to be 9.0 and 8.6 dB for TE and TM modes, respectively.
ASJC Scopus subject areas
- Physics and Astronomy(all)