Internally matched, ultralow DC power consumption CMOS amplifier for L-band personal communications

Kousuke Ohsato, Toshihiko Yoshimasu

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

An internally matched, extremely low operation voltage amplifier monolithic microwave integrated circuit (MMIC) has been implemented in a 0.35-μm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology for L-band personal communications. At 1.6 GHz the MMIC amplifier has a gain of 6.4 dB and a noise figure of 4.8 dB at a drain voltage of 0.6 V and a current of 2 mA. The MMIC amplifier exhibits a Gain/Power quotient as high as 5.33 dB/mW, which we believe is the highest recorded for Si CMOS MMIC technology.

Original languageEnglish
Pages (from-to)204-206
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume14
Issue number5
DOIs
Publication statusPublished - 2004 May

Fingerprint

Cellular telephone systems
microwave circuits
Monolithic microwave integrated circuits
ultrahigh frequencies
integrated circuits
CMOS
Electric power utilization
amplifiers
direct current
communication
Metals
voltage amplifiers
power gain
quotients
Noise figure
Electric potential
insulators
Silicon
Oxide semiconductors
electric potential

Keywords

  • CMOS
  • L-band personal communications
  • MMIC amplifier
  • SOI

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Internally matched, ultralow DC power consumption CMOS amplifier for L-band personal communications. / Ohsato, Kousuke; Yoshimasu, Toshihiko.

In: IEEE Microwave and Wireless Components Letters, Vol. 14, No. 5, 05.2004, p. 204-206.

Research output: Contribution to journalArticle

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