Internally matched, ultralow DC power consumption CMOS amplifier for L-band personal communications

Kousuke Ohsato, Toshihiko Yoshimasu

Research output: Contribution to journalArticle

17 Citations (Scopus)


An internally matched, extremely low operation voltage amplifier monolithic microwave integrated circuit (MMIC) has been implemented in a 0.35-μm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology for L-band personal communications. At 1.6 GHz the MMIC amplifier has a gain of 6.4 dB and a noise figure of 4.8 dB at a drain voltage of 0.6 V and a current of 2 mA. The MMIC amplifier exhibits a Gain/Power quotient as high as 5.33 dB/mW, which we believe is the highest recorded for Si CMOS MMIC technology.

Original languageEnglish
Pages (from-to)204-206
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number5
Publication statusPublished - 2004 May



  • CMOS
  • L-band personal communications
  • MMIC amplifier
  • SOI

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this