International technology roadmap for semiconductors 2005 edition

Takanobu Watanabe, Kosuke Tatsumura, Iwao Ohdomari

    Research output: Contribution to journalArticle

    59 Citations (Scopus)

    Abstract

    We propose a new oxidation rate equation for silicon supposing only a diffusion of oxidizing species but not including any rate-limiting step by interfacial reaction. It is supposed that diffusivity is suppressed in a strained oxide region near the SiO2 Si interface. The expression of a parabolic constant in the new equation is the same as that of the Deal-Grove model, while a linear constant makes a clear distinction with that of the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layers.

    Original languageEnglish
    Article number196102
    JournalPhysical Review Letters
    Volume96
    Issue number19
    DOIs
    Publication statusPublished - 2006

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    transition layers
    diffusivity
    oxidation
    oxides
    silicon

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    International technology roadmap for semiconductors 2005 edition. / Watanabe, Takanobu; Tatsumura, Kosuke; Ohdomari, Iwao.

    In: Physical Review Letters, Vol. 96, No. 19, 196102, 2006.

    Research output: Contribution to journalArticle

    Watanabe, Takanobu ; Tatsumura, Kosuke ; Ohdomari, Iwao. / International technology roadmap for semiconductors 2005 edition. In: Physical Review Letters. 2006 ; Vol. 96, No. 19.
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