Intrinsic and extrinsic recombination radiation from undoped and boron-doped diamonds formed by plasma chemical vapor deposition

Hiroshi Kawarada, Y. Yokota, A. Hiraki

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

In small particles of chemical vapor deposited (CVD) diamond and polycrystalline thin films composed of the particles, the recombination radiation of free excitons and bound excitons associated with multiple phonons has been observed using cathodoluminescence. The bound excitons are due to neutral acceptors of boron in the diamonds. The cathodoluminescence imaging reveals that the recombinations of free excitons are located at {100} sectors. The crystal perfection and purity is high in {100} sectors compared with {111} sectors formed in the CVD process.

Original languageEnglish
Pages (from-to)1889-1891
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number18
DOIs
Publication statusPublished - 1990
Externally publishedYes

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boron
diamonds
excitons
vapor deposition
sectors
radiation
cathodoluminescence
vapors
purity
phonons
thin films
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Intrinsic and extrinsic recombination radiation from undoped and boron-doped diamonds formed by plasma chemical vapor deposition. / Kawarada, Hiroshi; Yokota, Y.; Hiraki, A.

In: Applied Physics Letters, Vol. 57, No. 18, 1990, p. 1889-1891.

Research output: Contribution to journalArticle

@article{15c025d4ae73481aaefc11051a40167c,
title = "Intrinsic and extrinsic recombination radiation from undoped and boron-doped diamonds formed by plasma chemical vapor deposition",
abstract = "In small particles of chemical vapor deposited (CVD) diamond and polycrystalline thin films composed of the particles, the recombination radiation of free excitons and bound excitons associated with multiple phonons has been observed using cathodoluminescence. The bound excitons are due to neutral acceptors of boron in the diamonds. The cathodoluminescence imaging reveals that the recombinations of free excitons are located at {100} sectors. The crystal perfection and purity is high in {100} sectors compared with {111} sectors formed in the CVD process.",
author = "Hiroshi Kawarada and Y. Yokota and A. Hiraki",
year = "1990",
doi = "10.1063/1.104002",
language = "English",
volume = "57",
pages = "1889--1891",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "18",

}

TY - JOUR

T1 - Intrinsic and extrinsic recombination radiation from undoped and boron-doped diamonds formed by plasma chemical vapor deposition

AU - Kawarada, Hiroshi

AU - Yokota, Y.

AU - Hiraki, A.

PY - 1990

Y1 - 1990

N2 - In small particles of chemical vapor deposited (CVD) diamond and polycrystalline thin films composed of the particles, the recombination radiation of free excitons and bound excitons associated with multiple phonons has been observed using cathodoluminescence. The bound excitons are due to neutral acceptors of boron in the diamonds. The cathodoluminescence imaging reveals that the recombinations of free excitons are located at {100} sectors. The crystal perfection and purity is high in {100} sectors compared with {111} sectors formed in the CVD process.

AB - In small particles of chemical vapor deposited (CVD) diamond and polycrystalline thin films composed of the particles, the recombination radiation of free excitons and bound excitons associated with multiple phonons has been observed using cathodoluminescence. The bound excitons are due to neutral acceptors of boron in the diamonds. The cathodoluminescence imaging reveals that the recombinations of free excitons are located at {100} sectors. The crystal perfection and purity is high in {100} sectors compared with {111} sectors formed in the CVD process.

UR - http://www.scopus.com/inward/record.url?scp=21544439645&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544439645&partnerID=8YFLogxK

U2 - 10.1063/1.104002

DO - 10.1063/1.104002

M3 - Article

VL - 57

SP - 1889

EP - 1891

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

ER -