Inversion of magnetoresistance in La1-xSrxMnO3/Nb-doped SrTiO3/CoFe junctions

K. Ueda; K. Tozawa; H. Asano

doi:10.3938/jkps.63.706

Inversion of magnetoresistance in La_1-xSr_xMnO₃/Nb-doped SrTiO₃/CoFe junctions

K. Ueda^*, K. Tozawa, H. Asano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Magnetoresistance (MR) devices using degenerated oxide semiconductors, Nb-doped SrTiO₃, (Nb-STO) as intermediate layers between two ferromagnets were fabricated and their magnetic and transport properties were evaluated. Magnetic junctions using the trilayer films showed MR of ∼5% at 4.2 K, and the sign and the magnitude of the MR were changed depending on the thickness of Nb-STO layers. The origin of the inversion of the MR is not clear, however we consider spin injection from ferromagnetic electrodes to Nb-STO through Schottky tunnel barriers plays an important role.

Original language	English
Pages (from-to)	706-710
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	63
Issue number	3
DOIs	https://doi.org/10.3938/jkps.63.706
Publication status	Published - 2013 Aug
Externally published	Yes

Keywords

Degenerated semiconductors
Inverse MR
LaSrMnO
Magnetoresistance
Nb-doped SrTiO

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.3938/jkps.63.706

Cite this

@article{5eeea3802e9544df84779bfb31885469,

title = "Inversion of magnetoresistance in La1-xSrxMnO3/Nb-doped SrTiO3/CoFe junctions",

abstract = "Magnetoresistance (MR) devices using degenerated oxide semiconductors, Nb-doped SrTiO3, (Nb-STO) as intermediate layers between two ferromagnets were fabricated and their magnetic and transport properties were evaluated. Magnetic junctions using the trilayer films showed MR of ∼5% at 4.2 K, and the sign and the magnitude of the MR were changed depending on the thickness of Nb-STO layers. The origin of the inversion of the MR is not clear, however we consider spin injection from ferromagnetic electrodes to Nb-STO through Schottky tunnel barriers plays an important role.",

keywords = "Degenerated semiconductors, Inverse MR, LaSrMnO, Magnetoresistance, Nb-doped SrTiO",

author = "K. Ueda and K. Tozawa and H. Asano",

note = "Funding Information: This work was partly supported by a Grant-in-Aid for Science Research (No. 20360005, 50262853, 22760250, 24560372) from the Ministry of Education, Culture, Sports, Science and Technology, Japan.",

year = "2013",

month = aug,

doi = "10.3938/jkps.63.706",

language = "English",

volume = "63",

pages = "706--710",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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TY - JOUR

T1 - Inversion of magnetoresistance in La1-xSrxMnO3/Nb-doped SrTiO3/CoFe junctions

AU - Ueda, K.

AU - Tozawa, K.

AU - Asano, H.

N1 - Funding Information: This work was partly supported by a Grant-in-Aid for Science Research (No. 20360005, 50262853, 22760250, 24560372) from the Ministry of Education, Culture, Sports, Science and Technology, Japan.

PY - 2013/8

Y1 - 2013/8

N2 - Magnetoresistance (MR) devices using degenerated oxide semiconductors, Nb-doped SrTiO3, (Nb-STO) as intermediate layers between two ferromagnets were fabricated and their magnetic and transport properties were evaluated. Magnetic junctions using the trilayer films showed MR of ∼5% at 4.2 K, and the sign and the magnitude of the MR were changed depending on the thickness of Nb-STO layers. The origin of the inversion of the MR is not clear, however we consider spin injection from ferromagnetic electrodes to Nb-STO through Schottky tunnel barriers plays an important role.

AB - Magnetoresistance (MR) devices using degenerated oxide semiconductors, Nb-doped SrTiO3, (Nb-STO) as intermediate layers between two ferromagnets were fabricated and their magnetic and transport properties were evaluated. Magnetic junctions using the trilayer films showed MR of ∼5% at 4.2 K, and the sign and the magnitude of the MR were changed depending on the thickness of Nb-STO layers. The origin of the inversion of the MR is not clear, however we consider spin injection from ferromagnetic electrodes to Nb-STO through Schottky tunnel barriers plays an important role.

KW - Degenerated semiconductors

KW - Inverse MR

KW - LaSrMnO

KW - Magnetoresistance

KW - Nb-doped SrTiO

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