Inversion of magnetoresistance in La1-xSrxMnO3/Nb-doped SrTiO3/CoFe junctions

K. Ueda*, K. Tozawa, H. Asano

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Magnetoresistance (MR) devices using degenerated oxide semiconductors, Nb-doped SrTiO3, (Nb-STO) as intermediate layers between two ferromagnets were fabricated and their magnetic and transport properties were evaluated. Magnetic junctions using the trilayer films showed MR of ∼5% at 4.2 K, and the sign and the magnitude of the MR were changed depending on the thickness of Nb-STO layers. The origin of the inversion of the MR is not clear, however we consider spin injection from ferromagnetic electrodes to Nb-STO through Schottky tunnel barriers plays an important role.

Original languageEnglish
Pages (from-to)706-710
Number of pages5
JournalJournal of the Korean Physical Society
Issue number3
Publication statusPublished - 2013 Aug
Externally publishedYes


  • Degenerated semiconductors
  • Inverse MR
  • LaSrMnO
  • Magnetoresistance
  • Nb-doped SrTiO

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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