Investigation of a 1.5-μm-wavelength InAs-quantum-dot absorption layer for high-speed photodetector

Toshimasa Umezawa, Kouichi Akahane, Atsushi Kanno, Tetsuya Kawanishi

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We investigated a 1.5-μm-wavelength InAs-based quantum-dot (QD) absorption layer for high-speed and high-sensitivity photodetectors in advanced optical-fiber communications. The photodetector, which contained 20 stacked absorption layers of InAs/InGaAlAs QDs using the straincompensation technique, exhibited a high absorption coefficient, avalanche multiplication effect, and a low dark current. It could operate at a low bias voltage for a p-type-intrinsic-n-type (PIN) diode structure. We expect that the 3-dB bandwidth at a low bias voltage would be approximately 50 GHz, and that the gain and bandwidth product in the avalanche multiplication region would be 150GHz at a high bias voltage.

Original languageEnglish
Article number032201
JournalApplied Physics Express
Volume7
Issue number3
DOIs
Publication statusPublished - 2014 Mar

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this