Investigation of a 1.5-μm-wavelength InAs-quantum-dot absorption layer for high-speed photodetector

Toshimasa Umezawa, Kouichi Akahane, Atsushi Kanno, Tetsuya Kawanishi

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We investigated a 1.5-μm-wavelength InAs-based quantum-dot (QD) absorption layer for high-speed and high-sensitivity photodetectors in advanced optical-fiber communications. The photodetector, which contained 20 stacked absorption layers of InAs/InGaAlAs QDs using the straincompensation technique, exhibited a high absorption coefficient, avalanche multiplication effect, and a low dark current. It could operate at a low bias voltage for a p-type-intrinsic-n-type (PIN) diode structure. We expect that the 3-dB bandwidth at a low bias voltage would be approximately 50 GHz, and that the gain and bandwidth product in the avalanche multiplication region would be 150GHz at a high bias voltage.

Original languageEnglish
Article number032201
JournalApplied Physics Express
Volume7
Issue number3
DOIs
Publication statusPublished - 2014
Externally publishedYes

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Bias voltage
Photodetectors
Semiconductor quantum dots
photometers
quantum dots
high speed
multiplication
Wavelength
avalanches
electric potential
wavelengths
bandwidth
Bandwidth
Optical fiber communication
Dark currents
dark current
absorptivity
Diodes
optical fibers
communication

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Investigation of a 1.5-μm-wavelength InAs-quantum-dot absorption layer for high-speed photodetector. / Umezawa, Toshimasa; Akahane, Kouichi; Kanno, Atsushi; Kawanishi, Tetsuya.

In: Applied Physics Express, Vol. 7, No. 3, 032201, 2014.

Research output: Contribution to journalArticle

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