Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy

Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto, Yoshiji Horikoshi

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements.

    Original languageEnglish
    Article number027120
    JournalAIP Advances
    Volume5
    Issue number2
    DOIs
    Publication statusPublished - 2015 Feb 1

    Fingerprint

    high energy electrons
    heterojunctions
    molecular beam epitaxy
    electron diffraction
    epitaxy
    diffraction
    x rays
    diffraction patterns
    photoluminescence
    oscillations
    transmission electron microscopy
    temperature

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy. / Thiru, Sathiabama; Asakawa, Masaki; Honda, Kazuki; Kawaharazuka, Atsushi; Tackeuchi, Atsushi; Makimoto, Toshiki; Horikoshi, Yoshiji.

    In: AIP Advances, Vol. 5, No. 2, 027120, 01.02.2015.

    Research output: Contribution to journalArticle

    Thiru, Sathiabama ; Asakawa, Masaki ; Honda, Kazuki ; Kawaharazuka, Atsushi ; Tackeuchi, Atsushi ; Makimoto, Toshiki ; Horikoshi, Yoshiji. / Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy. In: AIP Advances. 2015 ; Vol. 5, No. 2.
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    AU - Thiru, Sathiabama

    AU - Asakawa, Masaki

    AU - Honda, Kazuki

    AU - Kawaharazuka, Atsushi

    AU - Tackeuchi, Atsushi

    AU - Makimoto, Toshiki

    AU - Horikoshi, Yoshiji

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