Investigation of current-voltage characteristics of oxide region induced by atomic force microscope on hydrogen-terminated diamond surface

Hokuto Seo, Minoru Tachiki, Tokishige Banno, Yu Sumikawa, Hitoshi Umezawa, Hiroshi Kawarada

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The current-voltage characteristic of the atomic force microscope (AFM) field-assisted local oxidized region on an undoped hydrogen-terminated (H-terminated) diamond surface is investigated. The barrier height on the top of the valence band between the undoped H-terminated diamond surface and the AFM oxidized surface is estimated by Fowler-Nordheim (F-N) tunneling current analysis. By fitting the parameter of the slope in the F-N plot, the barrier height is estimated to be 61 meV in the electrically isolated conductive island structure. On the other hand, the barrier height is also estimated to be 72 meV in the lateral tunneling diode.

Original languageEnglish
Pages (from-to)4980-4982
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number7 B
Publication statusPublished - 2002 Jul 1

Keywords

  • Atomic force microscope
  • Field-assisted local oxidation
  • Fowler-Nordheim tunneling
  • Hydrogen-terminated diamond
  • Lateral tunneling diode

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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