Investigation of current-voltage characteristics of oxide region induced by atomic force microscope on hydrogen-terminated diamond surface

Hokuto Seo; Minoru Tachiki; Tokishige Banno; Yu Sumikawa; Hitoshi Umezawa; Hiroshi Kawarada

doi:10.1143/jjap.41.4980

Investigation of current-voltage characteristics of oxide region induced by atomic force microscope on hydrogen-terminated diamond surface

Hokuto Seo, Minoru Tachiki, Tokishige Banno, Yu Sumikawa, Hitoshi Umezawa, Hiroshi Kawarada

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The current-voltage characteristic of the atomic force microscope (AFM) field-assisted local oxidized region on an undoped hydrogen-terminated (H-terminated) diamond surface is investigated. The barrier height on the top of the valence band between the undoped H-terminated diamond surface and the AFM oxidized surface is estimated by Fowler-Nordheim (F-N) tunneling current analysis. By fitting the parameter of the slope in the F-N plot, the barrier height is estimated to be 61 meV in the electrically isolated conductive island structure. On the other hand, the barrier height is also estimated to be 72 meV in the lateral tunneling diode.

Original language	English
Pages (from-to)	4980-4982
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	7 B
DOIs	https://doi.org/10.1143/jjap.41.4980
Publication status	Published - 2002 Jul

Keywords

Atomic force microscope
Field-assisted local oxidation
Fowler-Nordheim tunneling
Hydrogen-terminated diamond
Lateral tunneling diode

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Seo, H., Tachiki, M., Banno, T., Sumikawa, Y., Umezawa, H., & Kawarada, H. (2002). Investigation of current-voltage characteristics of oxide region induced by atomic force microscope on hydrogen-terminated diamond surface. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 41(7 B), 4980-4982. https://doi.org/10.1143/jjap.41.4980

Investigation of current-voltage characteristics of oxide region induced by atomic force microscope on hydrogen-terminated diamond surface. / Seo, Hokuto; Tachiki, Minoru; Banno, Tokishige; Sumikawa, Yu; Umezawa, Hitoshi; Kawarada, Hiroshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 7 B, 07.2002, p. 4980-4982.

Research output: Contribution to journal › Article › peer-review

Seo, H, Tachiki, M, Banno, T, Sumikawa, Y, Umezawa, H & Kawarada, H 2002, 'Investigation of current-voltage characteristics of oxide region induced by atomic force microscope on hydrogen-terminated diamond surface', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 41, no. 7 B, pp. 4980-4982. https://doi.org/10.1143/jjap.41.4980

Seo, Hokuto ; Tachiki, Minoru ; Banno, Tokishige ; Sumikawa, Yu ; Umezawa, Hitoshi ; Kawarada, Hiroshi. / Investigation of current-voltage characteristics of oxide region induced by atomic force microscope on hydrogen-terminated diamond surface. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2002 ; Vol. 41, No. 7 B. pp. 4980-4982.

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abstract = "The current-voltage characteristic of the atomic force microscope (AFM) field-assisted local oxidized region on an undoped hydrogen-terminated (H-terminated) diamond surface is investigated. The barrier height on the top of the valence band between the undoped H-terminated diamond surface and the AFM oxidized surface is estimated by Fowler-Nordheim (F-N) tunneling current analysis. By fitting the parameter of the slope in the F-N plot, the barrier height is estimated to be 61 meV in the electrically isolated conductive island structure. On the other hand, the barrier height is also estimated to be 72 meV in the lateral tunneling diode.",

keywords = "Atomic force microscope, Field-assisted local oxidation, Fowler-Nordheim tunneling, Hydrogen-terminated diamond, Lateral tunneling diode",

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AU - Seo, Hokuto

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AU - Umezawa, Hitoshi

AU - Kawarada, Hiroshi

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AB - The current-voltage characteristic of the atomic force microscope (AFM) field-assisted local oxidized region on an undoped hydrogen-terminated (H-terminated) diamond surface is investigated. The barrier height on the top of the valence band between the undoped H-terminated diamond surface and the AFM oxidized surface is estimated by Fowler-Nordheim (F-N) tunneling current analysis. By fitting the parameter of the slope in the F-N plot, the barrier height is estimated to be 61 meV in the electrically isolated conductive island structure. On the other hand, the barrier height is also estimated to be 72 meV in the lateral tunneling diode.

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Investigation of current-voltage characteristics of oxide region induced by atomic force microscope on hydrogen-terminated diamond surface

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Keywords

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