Investigation of current-voltage characteristics of oxide region induced by atomic force microscope on hydrogen-terminated diamond surface

Hokuto Seo, Minoru Tachiki, Tokishige Banno, Yu Sumikawa, Hitoshi Umezawa, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    12 Citations (Scopus)

    Abstract

    The current-voltage characteristic of the atomic force microscope (AFM) field-assisted local oxidized region on an undoped hydrogen-terminated (H-terminated) diamond surface is investigated. The barrier height on the top of the valence band between the undoped H-terminated diamond surface and the AFM oxidized surface is estimated by Fowler-Nordheim (F-N) tunneling current analysis. By fitting the parameter of the slope in the F-N plot, the barrier height is estimated to be 61 meV in the electrically isolated conductive island structure. On the other hand, the barrier height is also estimated to be 72 meV in the lateral tunneling diode.

    Original languageEnglish
    Pages (from-to)4980-4982
    Number of pages3
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume41
    Issue number7 B
    Publication statusPublished - 2002 Jul

    Fingerprint

    Current voltage characteristics
    Diamonds
    Microscopes
    diamonds
    microscopes
    Hydrogen
    Oxides
    oxides
    electric potential
    hydrogen
    Valence bands
    Field emission
    Diodes
    plots
    diodes
    slopes
    valence

    Keywords

    • Atomic force microscope
    • Field-assisted local oxidation
    • Fowler-Nordheim tunneling
    • Hydrogen-terminated diamond
    • Lateral tunneling diode

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Investigation of current-voltage characteristics of oxide region induced by atomic force microscope on hydrogen-terminated diamond surface. / Seo, Hokuto; Tachiki, Minoru; Banno, Tokishige; Sumikawa, Yu; Umezawa, Hitoshi; Kawarada, Hiroshi.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 7 B, 07.2002, p. 4980-4982.

    Research output: Contribution to journalArticle

    @article{df5d1ab7af254913aa06c99293bad6ed,
    title = "Investigation of current-voltage characteristics of oxide region induced by atomic force microscope on hydrogen-terminated diamond surface",
    abstract = "The current-voltage characteristic of the atomic force microscope (AFM) field-assisted local oxidized region on an undoped hydrogen-terminated (H-terminated) diamond surface is investigated. The barrier height on the top of the valence band between the undoped H-terminated diamond surface and the AFM oxidized surface is estimated by Fowler-Nordheim (F-N) tunneling current analysis. By fitting the parameter of the slope in the F-N plot, the barrier height is estimated to be 61 meV in the electrically isolated conductive island structure. On the other hand, the barrier height is also estimated to be 72 meV in the lateral tunneling diode.",
    keywords = "Atomic force microscope, Field-assisted local oxidation, Fowler-Nordheim tunneling, Hydrogen-terminated diamond, Lateral tunneling diode",
    author = "Hokuto Seo and Minoru Tachiki and Tokishige Banno and Yu Sumikawa and Hitoshi Umezawa and Hiroshi Kawarada",
    year = "2002",
    month = "7",
    language = "English",
    volume = "41",
    pages = "4980--4982",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "7 B",

    }

    TY - JOUR

    T1 - Investigation of current-voltage characteristics of oxide region induced by atomic force microscope on hydrogen-terminated diamond surface

    AU - Seo, Hokuto

    AU - Tachiki, Minoru

    AU - Banno, Tokishige

    AU - Sumikawa, Yu

    AU - Umezawa, Hitoshi

    AU - Kawarada, Hiroshi

    PY - 2002/7

    Y1 - 2002/7

    N2 - The current-voltage characteristic of the atomic force microscope (AFM) field-assisted local oxidized region on an undoped hydrogen-terminated (H-terminated) diamond surface is investigated. The barrier height on the top of the valence band between the undoped H-terminated diamond surface and the AFM oxidized surface is estimated by Fowler-Nordheim (F-N) tunneling current analysis. By fitting the parameter of the slope in the F-N plot, the barrier height is estimated to be 61 meV in the electrically isolated conductive island structure. On the other hand, the barrier height is also estimated to be 72 meV in the lateral tunneling diode.

    AB - The current-voltage characteristic of the atomic force microscope (AFM) field-assisted local oxidized region on an undoped hydrogen-terminated (H-terminated) diamond surface is investigated. The barrier height on the top of the valence band between the undoped H-terminated diamond surface and the AFM oxidized surface is estimated by Fowler-Nordheim (F-N) tunneling current analysis. By fitting the parameter of the slope in the F-N plot, the barrier height is estimated to be 61 meV in the electrically isolated conductive island structure. On the other hand, the barrier height is also estimated to be 72 meV in the lateral tunneling diode.

    KW - Atomic force microscope

    KW - Field-assisted local oxidation

    KW - Fowler-Nordheim tunneling

    KW - Hydrogen-terminated diamond

    KW - Lateral tunneling diode

    UR - http://www.scopus.com/inward/record.url?scp=0036656795&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0036656795&partnerID=8YFLogxK

    M3 - Article

    VL - 41

    SP - 4980

    EP - 4982

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 7 B

    ER -