Investigation of effect of strain on low-threshold 1.3μm InGaAsP strained-layer quantum well lasers

T. Tsuchiya, M. Komori, K. Uomi, A. Oka, T. Kawano, A. Oishi

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The authors have investigated the effect of strain on 1.3μm InGaAsP lasers under the same well thickness (6nm) and same lasing wavelength (1.34μm) by changing the In and As contents. The maximum photoluminescence intensity, the narrowest photoluminescence full width at half maximum (23meV), and minimum threshold current density (450A/cm2) were obtained for 1.4% compressive strain. Moreover, a very low CW threshold current (1.3mA) was also achieved in a 90-70% coated 200μm-long device.

Original languageEnglish
Pages (from-to)788-789
Number of pages2
JournalElectronics Letters
Volume30
Issue number10
DOIs
Publication statusPublished - 1994 May 12
Externally publishedYes

Keywords

  • Photoluminescence
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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