Abstract
Surface photo-absorption (SPA) is a newly developed in-situ optical monitoring technique for the epitaxial growth process. This method is based on the reflectivity measurement of p-polarized light at the Brewster angle. This configuration minimizes the bulk GaAs contribution in light reflection. The small change in reflection light intensity between Ga and As atomic surfaces during GaAs growth is thus detected with a high signal-to-noise ratio. It was found that the SPA signal is very sensitive to the surface chemical species on the growing surface, because the optical reflectivity of the alkyl Ga surface differs from that of the metal Ga surface. By using this characteristic of SPA, we investigated the growth processes in flow-rate modulation epitaxy and atomic layer epitaxy of GaAs.
| Original language | English |
|---|---|
| Pages (from-to) | 139-145 |
| Number of pages | 7 |
| Journal | Acta Polytechnica Scandinavica, Chemical Technology and Metallurgy Series |
| Issue number | 195 |
| Publication status | Published - 1990 Dec 1 |
| Externally published | Yes |
| Event | First International Symposium on Atomic Layer Epitaxy - Espoo, Finl Duration: 1990 Jun 11 → 1990 Jun 13 |
ASJC Scopus subject areas
- Chemical Engineering(all)