Investigation of growth processes in flow-rate modulation epitaxy and atomic layer epitaxy by new in-situ optical monitoring method

Naoki Kobayashi, Toshiki Makimoto, Yoshiharu Yamauchi, Yoshiji Horikoshi

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Surface photo-absorption (SPA) is a newly developed in-situ optical monitoring technique for the epitaxial growth process. This method is based on the reflectivity measurement of p-polarized light at the Brewster angle. This configuration minimizes the bulk GaAs contribution in light reflection. The small change in reflection light intensity between Ga and As atomic surfaces during GaAs growth is thus detected with a high signal-to-noise ratio. It was found that the SPA signal is very sensitive to the surface chemical species on the growing surface, because the optical reflectivity of the alkyl Ga surface differs from that of the metal Ga surface. By using this characteristic of SPA, we investigated the growth processes in flow-rate modulation epitaxy and atomic layer epitaxy of GaAs.

Original languageEnglish
Pages (from-to)139-145
Number of pages7
JournalActa Polytechnica Scandinavica, Chemical Technology and Metallurgy Series
Issue number195
Publication statusPublished - 1990 Dec 1
Externally publishedYes
EventFirst International Symposium on Atomic Layer Epitaxy - Espoo, Finl
Duration: 1990 Jun 111990 Jun 13

ASJC Scopus subject areas

  • Chemical Engineering(all)

Fingerprint Dive into the research topics of 'Investigation of growth processes in flow-rate modulation epitaxy and atomic layer epitaxy by new in-situ optical monitoring method'. Together they form a unique fingerprint.

  • Cite this