Investigation of heavily nitrogen-doped n+ 4H-SiC crystals grown by physical vapor transport

Noboru Ohtani, Masakazu Katsuno, Masashi Nakabayashi, Tatsuo Fujimoto, Hiroshi Tsuge, Hirokatsu Yashiro, Takashi Aigo, Hosei Hirano, Taizo Hoshino, Kohei Tatsumi

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Heavily nitrogen-doped n+ 4H-SiC single crystals were grown by the physical vapor transport (PVT) method. The nitrogen incorporation kinetics in a heavily doped regime was studied in terms of growth temperature dependence, and it was revealed that the growth temperature substantially influenced the amount of nitrogen incorporated into the crystals and their surface step structures on the (0 0 0 1̄)C facet plane. The structural quality of heavily nitrogen-doped 4H-SiC crystals was examined by X-ray rocking curve measurements and defect selective etching by molten KOH at around 500 °C. The crystals contained an extremely low density of 3C-SiC inclusions and stacking faults and showed a comparable crystalline quality to conventionally doped 4H-SiC substrates. Furthermore the structural stability of the heavily nitrogen-doped 4H-SiC substrates during high-temperature treatments has been investigated. The substrates with a large {0 0 0 1} surface roughness showed a resistivity increase after annealing at 1100 °C for 2 h, which was confirmed to be caused by the formation and expansion of double Shockley-type basal plane stacking faults in the substrates. The occurrence of the stacking faults largely depended on the surface preparation conditions of substrates, which indicate that the primary nucleation sites of stacking faults exist in the near-surface regions of substrates.

Original languageEnglish
Pages (from-to)1475-1481
Number of pages7
JournalJournal of Crystal Growth
Volume311
Issue number6
DOIs
Publication statusPublished - 2009 Mar 1
Externally publishedYes

Fingerprint

Nitrogen
Vapors
Stacking faults
vapors
nitrogen
crystal defects
Crystals
Substrates
crystals
Growth temperature
structural stability
Molten materials
flat surfaces
Etching
surface roughness
Nucleation
Surface roughness
etching
Single crystals
nucleation

Keywords

  • A1. Defects
  • A1. Doping
  • A1. Surface structure
  • A2. Growth from vapor
  • B2. Semiconducting silicon compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Investigation of heavily nitrogen-doped n+ 4H-SiC crystals grown by physical vapor transport. / Ohtani, Noboru; Katsuno, Masakazu; Nakabayashi, Masashi; Fujimoto, Tatsuo; Tsuge, Hiroshi; Yashiro, Hirokatsu; Aigo, Takashi; Hirano, Hosei; Hoshino, Taizo; Tatsumi, Kohei.

In: Journal of Crystal Growth, Vol. 311, No. 6, 01.03.2009, p. 1475-1481.

Research output: Contribution to journalArticle

Ohtani, N, Katsuno, M, Nakabayashi, M, Fujimoto, T, Tsuge, H, Yashiro, H, Aigo, T, Hirano, H, Hoshino, T & Tatsumi, K 2009, 'Investigation of heavily nitrogen-doped n+ 4H-SiC crystals grown by physical vapor transport', Journal of Crystal Growth, vol. 311, no. 6, pp. 1475-1481. https://doi.org/10.1016/j.jcrysgro.2009.01.119
Ohtani, Noboru ; Katsuno, Masakazu ; Nakabayashi, Masashi ; Fujimoto, Tatsuo ; Tsuge, Hiroshi ; Yashiro, Hirokatsu ; Aigo, Takashi ; Hirano, Hosei ; Hoshino, Taizo ; Tatsumi, Kohei. / Investigation of heavily nitrogen-doped n+ 4H-SiC crystals grown by physical vapor transport. In: Journal of Crystal Growth. 2009 ; Vol. 311, No. 6. pp. 1475-1481.
@article{6c6d20a7d89e4b148980baf75b03a831,
title = "Investigation of heavily nitrogen-doped n+ 4H-SiC crystals grown by physical vapor transport",
abstract = "Heavily nitrogen-doped n+ 4H-SiC single crystals were grown by the physical vapor transport (PVT) method. The nitrogen incorporation kinetics in a heavily doped regime was studied in terms of growth temperature dependence, and it was revealed that the growth temperature substantially influenced the amount of nitrogen incorporated into the crystals and their surface step structures on the (0 0 0 1̄)C facet plane. The structural quality of heavily nitrogen-doped 4H-SiC crystals was examined by X-ray rocking curve measurements and defect selective etching by molten KOH at around 500 °C. The crystals contained an extremely low density of 3C-SiC inclusions and stacking faults and showed a comparable crystalline quality to conventionally doped 4H-SiC substrates. Furthermore the structural stability of the heavily nitrogen-doped 4H-SiC substrates during high-temperature treatments has been investigated. The substrates with a large {0 0 0 1} surface roughness showed a resistivity increase after annealing at 1100 °C for 2 h, which was confirmed to be caused by the formation and expansion of double Shockley-type basal plane stacking faults in the substrates. The occurrence of the stacking faults largely depended on the surface preparation conditions of substrates, which indicate that the primary nucleation sites of stacking faults exist in the near-surface regions of substrates.",
keywords = "A1. Defects, A1. Doping, A1. Surface structure, A2. Growth from vapor, B2. Semiconducting silicon compounds",
author = "Noboru Ohtani and Masakazu Katsuno and Masashi Nakabayashi and Tatsuo Fujimoto and Hiroshi Tsuge and Hirokatsu Yashiro and Takashi Aigo and Hosei Hirano and Taizo Hoshino and Kohei Tatsumi",
year = "2009",
month = "3",
day = "1",
doi = "10.1016/j.jcrysgro.2009.01.119",
language = "English",
volume = "311",
pages = "1475--1481",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "6",

}

TY - JOUR

T1 - Investigation of heavily nitrogen-doped n+ 4H-SiC crystals grown by physical vapor transport

AU - Ohtani, Noboru

AU - Katsuno, Masakazu

AU - Nakabayashi, Masashi

AU - Fujimoto, Tatsuo

AU - Tsuge, Hiroshi

AU - Yashiro, Hirokatsu

AU - Aigo, Takashi

AU - Hirano, Hosei

AU - Hoshino, Taizo

AU - Tatsumi, Kohei

PY - 2009/3/1

Y1 - 2009/3/1

N2 - Heavily nitrogen-doped n+ 4H-SiC single crystals were grown by the physical vapor transport (PVT) method. The nitrogen incorporation kinetics in a heavily doped regime was studied in terms of growth temperature dependence, and it was revealed that the growth temperature substantially influenced the amount of nitrogen incorporated into the crystals and their surface step structures on the (0 0 0 1̄)C facet plane. The structural quality of heavily nitrogen-doped 4H-SiC crystals was examined by X-ray rocking curve measurements and defect selective etching by molten KOH at around 500 °C. The crystals contained an extremely low density of 3C-SiC inclusions and stacking faults and showed a comparable crystalline quality to conventionally doped 4H-SiC substrates. Furthermore the structural stability of the heavily nitrogen-doped 4H-SiC substrates during high-temperature treatments has been investigated. The substrates with a large {0 0 0 1} surface roughness showed a resistivity increase after annealing at 1100 °C for 2 h, which was confirmed to be caused by the formation and expansion of double Shockley-type basal plane stacking faults in the substrates. The occurrence of the stacking faults largely depended on the surface preparation conditions of substrates, which indicate that the primary nucleation sites of stacking faults exist in the near-surface regions of substrates.

AB - Heavily nitrogen-doped n+ 4H-SiC single crystals were grown by the physical vapor transport (PVT) method. The nitrogen incorporation kinetics in a heavily doped regime was studied in terms of growth temperature dependence, and it was revealed that the growth temperature substantially influenced the amount of nitrogen incorporated into the crystals and their surface step structures on the (0 0 0 1̄)C facet plane. The structural quality of heavily nitrogen-doped 4H-SiC crystals was examined by X-ray rocking curve measurements and defect selective etching by molten KOH at around 500 °C. The crystals contained an extremely low density of 3C-SiC inclusions and stacking faults and showed a comparable crystalline quality to conventionally doped 4H-SiC substrates. Furthermore the structural stability of the heavily nitrogen-doped 4H-SiC substrates during high-temperature treatments has been investigated. The substrates with a large {0 0 0 1} surface roughness showed a resistivity increase after annealing at 1100 °C for 2 h, which was confirmed to be caused by the formation and expansion of double Shockley-type basal plane stacking faults in the substrates. The occurrence of the stacking faults largely depended on the surface preparation conditions of substrates, which indicate that the primary nucleation sites of stacking faults exist in the near-surface regions of substrates.

KW - A1. Defects

KW - A1. Doping

KW - A1. Surface structure

KW - A2. Growth from vapor

KW - B2. Semiconducting silicon compounds

UR - http://www.scopus.com/inward/record.url?scp=62549120008&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=62549120008&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2009.01.119

DO - 10.1016/j.jcrysgro.2009.01.119

M3 - Article

VL - 311

SP - 1475

EP - 1481

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 6

ER -