Abstract
We report on the study of InGaAsP solar cells grown by solid-state molecular beam epitaxy (MBE) on InP. The effect of growth temperature on device performance is investigated. Under standard one-sun air-mass 1.5 global (AM1.5) illumination, an efficiency of 18.8% has been obtained for In0.78Ga0.22As0.48P0.52 single-junction solar cells grown at high temperature. Time-resolved photoluminescence (PL) results demonstrate that the In0.78Ga0.22As0.48P0.52 optical quality is greatly improved in the case of a high growth temperature. A longer PL decay time of In0.78Ga0.22As0.48P0.52/InP in contrast to In0.78Ga0.22As0.48P0.52/In0.52Al0.48As indicates that InP is more promising as the back surface field for future solar cell performance improvements.
| Original language | English |
|---|---|
| Pages (from-to) | 68-72 |
| Number of pages | 5 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 137 |
| DOIs | |
| Publication status | Published - 2015 |
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Keywords
- Carrier recombination dynamics
- InGaAsP
- Molecular beam epitaxy
- Quantum efficiency
- Solar cell
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
Cite this
Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy. / Ji, Lian; Tan, Ming; Honda, Kazuki; Harasawa, Ryo; Yasue, Yuya; Wu, Yuanyuan; Dai, Pan; Tackeuchi, Atsushi; Bian, Lifeng; Lu, Shulong; Yang, Hui.
In: Solar Energy Materials and Solar Cells, Vol. 137, 2015, p. 68-72.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy
AU - Ji, Lian
AU - Tan, Ming
AU - Honda, Kazuki
AU - Harasawa, Ryo
AU - Yasue, Yuya
AU - Wu, Yuanyuan
AU - Dai, Pan
AU - Tackeuchi, Atsushi
AU - Bian, Lifeng
AU - Lu, Shulong
AU - Yang, Hui
PY - 2015
Y1 - 2015
N2 - We report on the study of InGaAsP solar cells grown by solid-state molecular beam epitaxy (MBE) on InP. The effect of growth temperature on device performance is investigated. Under standard one-sun air-mass 1.5 global (AM1.5) illumination, an efficiency of 18.8% has been obtained for In0.78Ga0.22As0.48P0.52 single-junction solar cells grown at high temperature. Time-resolved photoluminescence (PL) results demonstrate that the In0.78Ga0.22As0.48P0.52 optical quality is greatly improved in the case of a high growth temperature. A longer PL decay time of In0.78Ga0.22As0.48P0.52/InP in contrast to In0.78Ga0.22As0.48P0.52/In0.52Al0.48As indicates that InP is more promising as the back surface field for future solar cell performance improvements.
AB - We report on the study of InGaAsP solar cells grown by solid-state molecular beam epitaxy (MBE) on InP. The effect of growth temperature on device performance is investigated. Under standard one-sun air-mass 1.5 global (AM1.5) illumination, an efficiency of 18.8% has been obtained for In0.78Ga0.22As0.48P0.52 single-junction solar cells grown at high temperature. Time-resolved photoluminescence (PL) results demonstrate that the In0.78Ga0.22As0.48P0.52 optical quality is greatly improved in the case of a high growth temperature. A longer PL decay time of In0.78Ga0.22As0.48P0.52/InP in contrast to In0.78Ga0.22As0.48P0.52/In0.52Al0.48As indicates that InP is more promising as the back surface field for future solar cell performance improvements.
KW - Carrier recombination dynamics
KW - InGaAsP
KW - Molecular beam epitaxy
KW - Quantum efficiency
KW - Solar cell
UR - http://www.scopus.com/inward/record.url?scp=84922692698&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84922692698&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2015.01.031
DO - 10.1016/j.solmat.2015.01.031
M3 - Article
AN - SCOPUS:84922692698
VL - 137
SP - 68
EP - 72
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -