Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy

Lian Ji, Ming Tan, Kazuki Honda, Ryo Harasawa, Yuya Yasue, Yuanyuan Wu, Pan Dai, Atsushi Tackeuchi, Lifeng Bian, Shulong Lu, Hui Yang

Research output: Contribution to journal › Article

11 Citations (Scopus)

Abstract

We report on the study of InGaAsP solar cells grown by solid-state molecular beam epitaxy (MBE) on InP. The effect of growth temperature on device performance is investigated. Under standard one-sun air-mass 1.5 global (AM1.5) illumination, an efficiency of 18.8% has been obtained for In0.78Ga0.22As0.48P0.52 single-junction solar cells grown at high temperature. Time-resolved photoluminescence (PL) results demonstrate that the In0.78Ga0.22As0.48P0.52 optical quality is greatly improved in the case of a high growth temperature. A longer PL decay time of In0.78Ga0.22As0.48P0.52/InP in contrast to In0.78Ga0.22As0.48P0.52/In0.52Al0.48As indicates that InP is more promising as the back surface field for future solar cell performance improvements.

Original languageEnglish
Pages (from-to)68-72
Number of pages5
JournalSolar Energy Materials and Solar Cells
Volume137
DOIs
Publication statusPublished - 2015 Jun

Keywords

  • Carrier recombination dynamics
  • InGaAsP
  • Molecular beam epitaxy
  • Quantum efficiency
  • Solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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    Ji, L., Tan, M., Honda, K., Harasawa, R., Yasue, Y., Wu, Y., Dai, P., Tackeuchi, A., Bian, L., Lu, S., & Yang, H. (2015). Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy. Solar Energy Materials and Solar Cells, 137, 68-72. https://doi.org/10.1016/j.solmat.2015.01.031