Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy

Lian Ji; Ming Tan; Kazuki Honda; Ryo Harasawa; Yuya Yasue; Yuanyuan Wu; Pan Dai; Atsushi Tackeuchi; Lifeng Bian; Shulong Lu; Hui Yang

doi:10.1016/j.solmat.2015.01.031

Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy

Lian Ji, Ming Tan, Kazuki Honda, Ryo Harasawa, Yuya Yasue, Yuanyuan Wu, Pan Dai, Atsushi Tackeuchi, Lifeng Bian, Shulong Lu, Hui Yang

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We report on the study of InGaAsP solar cells grown by solid-state molecular beam epitaxy (MBE) on InP. The effect of growth temperature on device performance is investigated. Under standard one-sun air-mass 1.5 global (AM1.5) illumination, an efficiency of 18.8% has been obtained for In_0.78Ga_0.22As_0.48P_0.52 single-junction solar cells grown at high temperature. Time-resolved photoluminescence (PL) results demonstrate that the In_0.78Ga_0.22As_0.48P_0.52 optical quality is greatly improved in the case of a high growth temperature. A longer PL decay time of In_0.78Ga_0.22As_0.48P_0.52/InP in contrast to In_0.78Ga_0.22As_0.48P_0.52/In_0.52Al_0.48As indicates that InP is more promising as the back surface field for future solar cell performance improvements.

Original language	English
Pages (from-to)	68-72
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	137
DOIs	https://doi.org/10.1016/j.solmat.2015.01.031
Publication status	Published - 2015 Jun

Keywords

Carrier recombination dynamics
InGaAsP
Molecular beam epitaxy
Quantum efficiency
Solar cell

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

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Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy. / Ji, Lian; Tan, Ming; Honda, Kazuki; Harasawa, Ryo; Yasue, Yuya; Wu, Yuanyuan; Dai, Pan; Tackeuchi, Atsushi; Bian, Lifeng; Lu, Shulong; Yang, Hui.

In: Solar Energy Materials and Solar Cells, Vol. 137, 06.2015, p. 68-72.

Research output: Contribution to journal › Article › peer-review

@article{6328f01e930c42c3a33476c2d1e003e7,

title = "Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy",

abstract = "We report on the study of InGaAsP solar cells grown by solid-state molecular beam epitaxy (MBE) on InP. The effect of growth temperature on device performance is investigated. Under standard one-sun air-mass 1.5 global (AM1.5) illumination, an efficiency of 18.8% has been obtained for In0.78Ga0.22As0.48P0.52 single-junction solar cells grown at high temperature. Time-resolved photoluminescence (PL) results demonstrate that the In0.78Ga0.22As0.48P0.52 optical quality is greatly improved in the case of a high growth temperature. A longer PL decay time of In0.78Ga0.22As0.48P0.52/InP in contrast to In0.78Ga0.22As0.48P0.52/In0.52Al0.48As indicates that InP is more promising as the back surface field for future solar cell performance improvements.",

keywords = "Carrier recombination dynamics, InGaAsP, Molecular beam epitaxy, Quantum efficiency, Solar cell",

author = "Lian Ji and Ming Tan and Kazuki Honda and Ryo Harasawa and Yuya Yasue and Yuanyuan Wu and Pan Dai and Atsushi Tackeuchi and Lifeng Bian and Shulong Lu and Hui Yang",

note = "Funding Information: The authors would like to thank Naoki Yamamoto and Hao Wu of Waseda University for their help in the TRPL measurements. This work is supported in part by the National Natural Science Foundation of China (Grant nos. 61404157 , 61376081 and 61176128 ), the National High Technology Research and Development Program of China (Grant no. 2013AA050403 ), the Application Foundation of Suzhou (Grant no. SYG201437 ), the knowledge Innovation Project of the CAS (Grant no. Y2BAQ11001 ), and the SINANO Program (Grant nos. Y1AAQ11002 and Y2AAQ11004 ). Publisher Copyright: {\textcopyright}2015 Elsevier B.V. All rights reserved. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.",

year = "2015",

month = jun,

doi = "10.1016/j.solmat.2015.01.031",

language = "English",

volume = "137",

pages = "68--72",

journal = "Solar Cells",

issn = "0927-0248",

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TY - JOUR

T1 - Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy

AU - Ji, Lian

AU - Tan, Ming

AU - Honda, Kazuki

AU - Harasawa, Ryo

AU - Yasue, Yuya

AU - Wu, Yuanyuan

AU - Dai, Pan

AU - Tackeuchi, Atsushi

AU - Bian, Lifeng

AU - Lu, Shulong

AU - Yang, Hui

N1 - Funding Information: The authors would like to thank Naoki Yamamoto and Hao Wu of Waseda University for their help in the TRPL measurements. This work is supported in part by the National Natural Science Foundation of China (Grant nos. 61404157 , 61376081 and 61176128 ), the National High Technology Research and Development Program of China (Grant no. 2013AA050403 ), the Application Foundation of Suzhou (Grant no. SYG201437 ), the knowledge Innovation Project of the CAS (Grant no. Y2BAQ11001 ), and the SINANO Program (Grant nos. Y1AAQ11002 and Y2AAQ11004 ). Publisher Copyright: ©2015 Elsevier B.V. All rights reserved. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.

PY - 2015/6

Y1 - 2015/6

N2 - We report on the study of InGaAsP solar cells grown by solid-state molecular beam epitaxy (MBE) on InP. The effect of growth temperature on device performance is investigated. Under standard one-sun air-mass 1.5 global (AM1.5) illumination, an efficiency of 18.8% has been obtained for In0.78Ga0.22As0.48P0.52 single-junction solar cells grown at high temperature. Time-resolved photoluminescence (PL) results demonstrate that the In0.78Ga0.22As0.48P0.52 optical quality is greatly improved in the case of a high growth temperature. A longer PL decay time of In0.78Ga0.22As0.48P0.52/InP in contrast to In0.78Ga0.22As0.48P0.52/In0.52Al0.48As indicates that InP is more promising as the back surface field for future solar cell performance improvements.

AB - We report on the study of InGaAsP solar cells grown by solid-state molecular beam epitaxy (MBE) on InP. The effect of growth temperature on device performance is investigated. Under standard one-sun air-mass 1.5 global (AM1.5) illumination, an efficiency of 18.8% has been obtained for In0.78Ga0.22As0.48P0.52 single-junction solar cells grown at high temperature. Time-resolved photoluminescence (PL) results demonstrate that the In0.78Ga0.22As0.48P0.52 optical quality is greatly improved in the case of a high growth temperature. A longer PL decay time of In0.78Ga0.22As0.48P0.52/InP in contrast to In0.78Ga0.22As0.48P0.52/In0.52Al0.48As indicates that InP is more promising as the back surface field for future solar cell performance improvements.

KW - Carrier recombination dynamics

KW - InGaAsP

KW - Molecular beam epitaxy

KW - Quantum efficiency

KW - Solar cell

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DO - 10.1016/j.solmat.2015.01.031

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VL - 137

SP - 68

EP - 72

JO - Solar Cells

JF - Solar Cells

SN - 0927-0248

ER -

Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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