Investigation of inxGa1-x As strain reducing layers effects on InAs/GaAs quantum dots

Shanmugam Saravanan, Takahisa Harayama

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Optical and morphological properties of self-assembled InAs quantum dots (QDs) covered by InxGa1-xAs strain reducing layers (SRL) with different thicknesses (2. 4, 6 and Snm) and compositions (x-0.13, 0.1.8 and 0.30) were investigated. Photolumincscencc from InAs QDs shows the dependence on indium mole fraction and thickness of the overgrown InxGa 1-xAs SRL. Improvement in PL intensity and narrowing of PL width up to 26 meV occurred together with a red shift of up to 138 nm when the QDs were coved with 6 nm of In0.18Ga0.82As. Also, we found that when the total amount of InAs deposited to form the QDs and the SRL was larger than a critical value of around 6MLs, the surface roughness increased and the PL intensity decreased drastically.

Original languageEnglish
Pages (from-to)53-59
Number of pages7
JournalIEICE Electronics Express
Volume5
Issue number2
DOIs
Publication statusPublished - 2008 Jan 25
Externally publishedYes

Fingerprint

Semiconductor quantum dots
quantum dots
Indium
red shift
indium
surface roughness
Surface roughness
optical properties
indium arsenide
gallium arsenide
Chemical analysis

Keywords

  • Atomic force microscopy
  • Molecular beam epitaxy
  • Photoluminescence
  • Quantum dots
  • Strain reducing layer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Investigation of inxGa1-x As strain reducing layers effects on InAs/GaAs quantum dots. / Saravanan, Shanmugam; Harayama, Takahisa.

In: IEICE Electronics Express, Vol. 5, No. 2, 25.01.2008, p. 53-59.

Research output: Contribution to journalArticle

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