Investigation of inxGa1-x As strain reducing layers effects on InAs/GaAs quantum dots

Shanmugam Saravanan; Takashisa Harayama

doi:10.1587/elex.5.53

Investigation of in_xGa_1-x As strain reducing layers effects on InAs/GaAs quantum dots

Shanmugam Saravanan^*, Takashisa Harayama

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Optical and morphological properties of self-assembled InAs quantum dots (QDs) covered by In_xGa_1-xAs strain reducing layers (SRL) with different thicknesses (2. 4, 6 and Snm) and compositions (x-0.13, 0.1.8 and 0.30) were investigated. Photolumincscencc from InAs QDs shows the dependence on indium mole fraction and thickness of the overgrown In_xGa _1-xAs SRL. Improvement in PL intensity and narrowing of PL width up to 26 meV occurred together with a red shift of up to 138 nm when the QDs were coved with 6 nm of In_0.18Ga_0.82As. Also, we found that when the total amount of InAs deposited to form the QDs and the SRL was larger than a critical value of around 6MLs, the surface roughness increased and the PL intensity decreased drastically.

Original language	English
Pages (from-to)	53-59
Number of pages	7
Journal	ieice electronics express
Volume	5
Issue number	2
DOIs	https://doi.org/10.1587/elex.5.53
Publication status	Published - 2008 Jan 25
Externally published	Yes

Keywords

Atomic force microscopy
Molecular beam epitaxy
Photoluminescence
Quantum dots
Strain reducing layer

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1587/elex.5.53

Cite this

@article{7418a7c70f7f44819a4720f78fcbf638,

title = "Investigation of inxGa1-x As strain reducing layers effects on InAs/GaAs quantum dots",

abstract = "Optical and morphological properties of self-assembled InAs quantum dots (QDs) covered by InxGa1-xAs strain reducing layers (SRL) with different thicknesses (2. 4, 6 and Snm) and compositions (x-0.13, 0.1.8 and 0.30) were investigated. Photolumincscencc from InAs QDs shows the dependence on indium mole fraction and thickness of the overgrown InxGa 1-xAs SRL. Improvement in PL intensity and narrowing of PL width up to 26 meV occurred together with a red shift of up to 138 nm when the QDs were coved with 6 nm of In0.18Ga0.82As. Also, we found that when the total amount of InAs deposited to form the QDs and the SRL was larger than a critical value of around 6MLs, the surface roughness increased and the PL intensity decreased drastically.",

keywords = "Atomic force microscopy, Molecular beam epitaxy, Photoluminescence, Quantum dots, Strain reducing layer",

author = "Shanmugam Saravanan and Takashisa Harayama",

year = "2008",

month = jan,

day = "25",

doi = "10.1587/elex.5.53",

language = "English",

volume = "5",

pages = "53--59",

journal = "IEICE Electronics Express",

issn = "1349-2543",

publisher = "The Institute of Electronics, Information and Communication Engineers (IEICE)",

number = "2",

}

TY - JOUR

T1 - Investigation of inxGa1-x As strain reducing layers effects on InAs/GaAs quantum dots

AU - Saravanan, Shanmugam

AU - Harayama, Takashisa

PY - 2008/1/25

Y1 - 2008/1/25

N2 - Optical and morphological properties of self-assembled InAs quantum dots (QDs) covered by InxGa1-xAs strain reducing layers (SRL) with different thicknesses (2. 4, 6 and Snm) and compositions (x-0.13, 0.1.8 and 0.30) were investigated. Photolumincscencc from InAs QDs shows the dependence on indium mole fraction and thickness of the overgrown InxGa 1-xAs SRL. Improvement in PL intensity and narrowing of PL width up to 26 meV occurred together with a red shift of up to 138 nm when the QDs were coved with 6 nm of In0.18Ga0.82As. Also, we found that when the total amount of InAs deposited to form the QDs and the SRL was larger than a critical value of around 6MLs, the surface roughness increased and the PL intensity decreased drastically.

AB - Optical and morphological properties of self-assembled InAs quantum dots (QDs) covered by InxGa1-xAs strain reducing layers (SRL) with different thicknesses (2. 4, 6 and Snm) and compositions (x-0.13, 0.1.8 and 0.30) were investigated. Photolumincscencc from InAs QDs shows the dependence on indium mole fraction and thickness of the overgrown InxGa 1-xAs SRL. Improvement in PL intensity and narrowing of PL width up to 26 meV occurred together with a red shift of up to 138 nm when the QDs were coved with 6 nm of In0.18Ga0.82As. Also, we found that when the total amount of InAs deposited to form the QDs and the SRL was larger than a critical value of around 6MLs, the surface roughness increased and the PL intensity decreased drastically.

KW - Atomic force microscopy

KW - Molecular beam epitaxy

KW - Photoluminescence

KW - Quantum dots

KW - Strain reducing layer

UR - http://www.scopus.com/inward/record.url?scp=42349090741&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42349090741&partnerID=8YFLogxK

U2 - 10.1587/elex.5.53

DO - 10.1587/elex.5.53

M3 - Article

AN - SCOPUS:42349090741

SN - 1349-2543

VL - 5

SP - 53

EP - 59

JO - IEICE Electronics Express

JF - IEICE Electronics Express

IS - 2

ER -