Investigation of micromorphology and carrier recombination dynamics for ingan/gan multi-quantum dots grown by molecular beam epitaxy

Xue Zhang, Wenxian Yang*, Zhiwei Xing, Haibing Qiu, Ying Gu, Lifeng Bian, Shulong Lu, Hua Qin, Yong Cai, Yuta Suzuki, Sakuya Kaneko, Yuki Matsuda, Shinji Izumi, Yuichi Nakamura, Atsushi Tackeuchi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

InGaN quantum dots (QDs) are promising candidates for GaN-based all-visible optoelectronic devices such as micro light-emitting diode and laser. In this study, self-assembled InGaN/GaN multi-quantum dots (MQDs) have been grown by plasma-assisted molecular beam epitaxy on c-plane GaN-on-sapphire template. A high density of over 3.8 × 1010 cm−2 is achieved and InGaN QDs exhibit a relatively uniform size distribution and good dispersity. Strong localization effect in as-grown InGaN QDs has been evidenced by temperature-dependent photoluminescence (PL). The variation of peak energy is as small as 35 meV with increasing temperature from 10 K to 300 K, implying excellent temperature stability of emission wavelength for InGaN MQDs. Moreover, the radiative and nonradiative recombination times were calculated by time-resolved PL (TRPL) measurements, and the temperature dependence of PL decay times reveal that radiative recombination dominates the recombination process due to the low dislocation density of QDs structure.

Original languageEnglish
Article number1312
JournalCrystals
Volume11
Issue number11
DOIs
Publication statusPublished - 2021 Nov

Keywords

  • Carrier recombination dynamics
  • InGaN quantum dots
  • Molecular beam epitaxy

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Inorganic Chemistry

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