Investigation of oxygen vacancies in micro-patterned PZT thin films using Raman spectroscopy

Ken Nishida; Minoru Osada; Shintaro Yokoyama; Takafumi Kamo; Fujisawa Takashi; Keisuke Saito; Hiroshi Funakubo; Takashi Katoda; Takashi Yamamoto

doi:10.4028/www.scientific.net/KEM.421-422.135

Investigation of oxygen vacancies in micro-patterned PZT thin films using Raman spectroscopy

Ken Nishida^*, Minoru Osada, Shintaro Yokoyama, Takafumi Kamo, Fujisawa Takashi, Keisuke Saito, Hiroshi Funakubo, Takashi Katoda, Takashi Yamamoto

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Micro-patterned Pb(Zr,Ti)O₃ (PZT) films with dot-pattern were grown by metal organic chemical vapor phase deposition (MOCVD). Micro-patterned Pb(Zr,Ti)O₃ (PZT) films were formed on dot-patterned SrRuO ₃ (SRO) buffer layer that was prepared by MOCVD through the metal mask on (111)Pt/Ti/SiO₂/Si substrate. The orientation of dot-patterned PZT films was ascertained by the micro-beam x-ray diffraction (XRD) and their crystallinity was characterized by Raman spectroscopy. It was found that PZT films were oriented to (111) on dot-pattern, while (100)/(001) out of dot-pattern and the amount of oxygen vacancies at the circumference of the dot-pattern were larger than that of center of dot-pattern.

Original language	English
Title of host publication	Key Engineering Materials
Pages	135-138
Number of pages	4
Volume	421-422
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.421-422.135
Publication status	Published - 2010
Externally published	Yes
Event	6th Asian Meeting on Electroceramics, AMEC-6, in conjunction with the Electronics Division Meeting of the Ceramic Society of Japan - Tsukuba, Japan Duration: 2008 Oct 22 → 2008 Oct 24

Publication series

Name	Key Engineering Materials
Volume	421-422
ISSN (Print)	10139826

Other

Other	6th Asian Meeting on Electroceramics, AMEC-6, in conjunction with the Electronics Division Meeting of the Ceramic Society of Japan
Country/Territory	Japan
City	Tsukuba
Period	08/10/22 → 08/10/24

Keywords

Micro-patterned Pb(Zr,Ti)O films
Oxygen vacancy
Raman spectroscopy

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/KEM.421-422.135

Cite this

Nishida, K., Osada, M., Yokoyama, S., Kamo, T., Takashi, F., Saito, K., Funakubo, H., Katoda, T., & Yamamoto, T. (2010). Investigation of oxygen vacancies in micro-patterned PZT thin films using Raman spectroscopy. In Key Engineering Materials (Vol. 421-422, pp. 135-138). (Key Engineering Materials; Vol. 421-422). https://doi.org/10.4028/www.scientific.net/KEM.421-422.135

Nishida, K, Osada, M, Yokoyama, S, Kamo, T, Takashi, F, Saito, K, Funakubo, H, Katoda, T & Yamamoto, T 2010, Investigation of oxygen vacancies in micro-patterned PZT thin films using Raman spectroscopy. in Key Engineering Materials. vol. 421-422, Key Engineering Materials, vol. 421-422, pp. 135-138, 6th Asian Meeting on Electroceramics, AMEC-6, in conjunction with the Electronics Division Meeting of the Ceramic Society of Japan, Tsukuba, Japan, 08/10/22. https://doi.org/10.4028/www.scientific.net/KEM.421-422.135

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title = "Investigation of oxygen vacancies in micro-patterned PZT thin films using Raman spectroscopy",

abstract = "Micro-patterned Pb(Zr,Ti)O3 (PZT) films with dot-pattern were grown by metal organic chemical vapor phase deposition (MOCVD). Micro-patterned Pb(Zr,Ti)O3 (PZT) films were formed on dot-patterned SrRuO 3 (SRO) buffer layer that was prepared by MOCVD through the metal mask on (111)Pt/Ti/SiO2/Si substrate. The orientation of dot-patterned PZT films was ascertained by the micro-beam x-ray diffraction (XRD) and their crystallinity was characterized by Raman spectroscopy. It was found that PZT films were oriented to (111) on dot-pattern, while (100)/(001) out of dot-pattern and the amount of oxygen vacancies at the circumference of the dot-pattern were larger than that of center of dot-pattern.",

keywords = "Micro-patterned Pb(Zr,Ti)O films, Oxygen vacancy, Raman spectroscopy",

author = "Ken Nishida and Minoru Osada and Shintaro Yokoyama and Takafumi Kamo and Fujisawa Takashi and Keisuke Saito and Hiroshi Funakubo and Takashi Katoda and Takashi Yamamoto",

year = "2010",

doi = "10.4028/www.scientific.net/KEM.421-422.135",

language = "English",

isbn = "0878493069",

volume = "421-422",

series = "Key Engineering Materials",

pages = "135--138",

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note = "6th Asian Meeting on Electroceramics, AMEC-6, in conjunction with the Electronics Division Meeting of the Ceramic Society of Japan ; Conference date: 22-10-2008 Through 24-10-2008",

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T1 - Investigation of oxygen vacancies in micro-patterned PZT thin films using Raman spectroscopy

AU - Nishida, Ken

AU - Osada, Minoru

AU - Yokoyama, Shintaro

AU - Kamo, Takafumi

AU - Takashi, Fujisawa

AU - Saito, Keisuke

AU - Funakubo, Hiroshi

AU - Katoda, Takashi

AU - Yamamoto, Takashi

PY - 2010

Y1 - 2010

N2 - Micro-patterned Pb(Zr,Ti)O3 (PZT) films with dot-pattern were grown by metal organic chemical vapor phase deposition (MOCVD). Micro-patterned Pb(Zr,Ti)O3 (PZT) films were formed on dot-patterned SrRuO 3 (SRO) buffer layer that was prepared by MOCVD through the metal mask on (111)Pt/Ti/SiO2/Si substrate. The orientation of dot-patterned PZT films was ascertained by the micro-beam x-ray diffraction (XRD) and their crystallinity was characterized by Raman spectroscopy. It was found that PZT films were oriented to (111) on dot-pattern, while (100)/(001) out of dot-pattern and the amount of oxygen vacancies at the circumference of the dot-pattern were larger than that of center of dot-pattern.

AB - Micro-patterned Pb(Zr,Ti)O3 (PZT) films with dot-pattern were grown by metal organic chemical vapor phase deposition (MOCVD). Micro-patterned Pb(Zr,Ti)O3 (PZT) films were formed on dot-patterned SrRuO 3 (SRO) buffer layer that was prepared by MOCVD through the metal mask on (111)Pt/Ti/SiO2/Si substrate. The orientation of dot-patterned PZT films was ascertained by the micro-beam x-ray diffraction (XRD) and their crystallinity was characterized by Raman spectroscopy. It was found that PZT films were oriented to (111) on dot-pattern, while (100)/(001) out of dot-pattern and the amount of oxygen vacancies at the circumference of the dot-pattern were larger than that of center of dot-pattern.

KW - Micro-patterned Pb(Zr,Ti)O films

KW - Oxygen vacancy

KW - Raman spectroscopy

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M3 - Conference contribution

AN - SCOPUS:75749106205

SN - 0878493069

SN - 9780878493067

VL - 421-422

T3 - Key Engineering Materials

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BT - Key Engineering Materials

T2 - 6th Asian Meeting on Electroceramics, AMEC-6, in conjunction with the Electronics Division Meeting of the Ceramic Society of Japan

Y2 - 22 October 2008 through 24 October 2008

ER -

Investigation of oxygen vacancies in micro-patterned PZT thin films using Raman spectroscopy

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