Damaged layers in crystalline diamond (100) samples were formed in the depth range of 0-90 nm by irradiation with 40 keV 12C ions to a dose of 1.3 × 1015 cm-2 at room temperature (RT), and successively annealed with and without 400 keV 40 Ar ions with doses up to 3.0 × 1015 cm-2 at 773 K. Rutherford backscattering spectrometry (RBS)-channeling measurements have revealed that damaged layers were annealed much faster with ion beam assistance than without it. It has been shown that the annealing process using a several hundred keV ion beam as low as 773 K can be applied to the crystallization of diamond. This suggests the promising applicability of an annealing process with ion beams to the introduction of p- and n-type dopants and requisite successive crystallization.
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 2000 Mar|
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Surfaces and Interfaces