Ion-beam annealing of diamond using Ar ions up to 400 keV

Masahiko Ogura, Masataka Hasegawa, Yasunori Tanaka, Naoto Kobayashi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Damaged layers in crystalline diamond (100) samples were formed in the depth range of 0-90 nm by irradiation with 40 keV 12C ions to a dose of 1.3 × 1015 cm-2 at room temperature (RT), and successively annealed with and without 400 keV 40 Ar ions with doses up to 3.0 × 1015 cm-2 at 773 K. Rutherford backscattering spectrometry (RBS)-channeling measurements have revealed that damaged layers were annealed much faster with ion beam assistance than without it. It has been shown that the annealing process using a several hundred keV ion beam as low as 773 K can be applied to the crystallization of diamond. This suggests the promising applicability of an annealing process with ion beams to the introduction of p- and n-type dopants and requisite successive crystallization.

Original languageEnglish
Pages (from-to)1043-1047
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume161
DOIs
Publication statusPublished - 2000 Mar
Externally publishedYes

Fingerprint

Diamond
Ion beams
Diamonds
diamonds
ion beams
Annealing
Ions
Crystallization
annealing
crystallization
dosage
ions
Rutherford backscattering spectroscopy
Spectrometry
Dosimetry
backscattering
Doping (additives)
Irradiation
Crystalline materials
irradiation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Ion-beam annealing of diamond using Ar ions up to 400 keV. / Ogura, Masahiko; Hasegawa, Masataka; Tanaka, Yasunori; Kobayashi, Naoto.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 161, 03.2000, p. 1043-1047.

Research output: Contribution to journalArticle

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