Ion beam induced a-axis in-plane oriented c-axis oriented AlN thin film growth for high-Q BAW resonator application

Chiaki Masamune, Takahiko Yanagitani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The frequency bands are becoming heavily used because the wireless standard is increased. Therefore, the demands for high Q filters are increasing. In previous study, it was found that the direction of crystal growth of ZnO can be controlled by ion beam irradiation during deposition [1], [2]. We aimed to improve the mechanical Qm factor by aligning the direction of crystal growth of AlN for in-plane direction [3].

Original languageEnglish
Title of host publication2019 IEEE International Ultrasonics Symposium, IUS 2019
PublisherIEEE Computer Society
Pages1127-1128
Number of pages2
ISBN (Electronic)9781728145969
DOIs
Publication statusPublished - 2019 Oct
Event2019 IEEE International Ultrasonics Symposium, IUS 2019 - Glasgow, United Kingdom
Duration: 2019 Oct 62019 Oct 9

Publication series

NameIEEE International Ultrasonics Symposium, IUS
Volume2019-October
ISSN (Print)1948-5719
ISSN (Electronic)1948-5727

Conference

Conference2019 IEEE International Ultrasonics Symposium, IUS 2019
CountryUnited Kingdom
CityGlasgow
Period19/10/619/10/9

Keywords

  • AlN
  • ion beam
  • ion beam irradiation
  • piezoelectric film
  • ScAlN

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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