Ion-beam-induced epitaxial crystallisation of metastable Si1-x-yGexCy layers fabricated by Ge and C ion implantation

Naoto Kobayashi, Masataka Hasegawa, Nobuyuki Hayashi, Hisao Tanoue, Hajime Shibata, Yunosuke Makita

Research output: Contribution to journalArticle

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Abstract

Formation of metastable Si1-x-yGexCy layers (x = 0.13 and y = 0.014 at peak concentration) on Si(100) has been performed by high-dose implantation of 80 keV Ge and 17 keV C ions and subsequent ion-beam-induced epitaxial crystallisation (IBIEC) with 400 keV Ar or Ge ion bombardments at 300-400°C. Their structural properties are compared with those of Si1-x-yGexCy layers grown by solid phase epitaxial growth (SPEG) up to 700°C. Crystalline growth by IBIEC has shown a larger growth rate in Si1-x-yGexCy Si than in Si1-xGex Si with the same Ge concentration for all bombardments under investigation. Depth profiles of implanted atoms observed by SIMS measurements have revealed almost the same profiles for Ge and C atoms after IBIEC process. X-ray rocking curve measurements have shown a strain-compensated growth of Si1-x-yGexCy Si by IBIEC, whereas it has been suggested that Si1-x-yGexCy Si layers crystallised by SPEG have both compressive and tensile strains.

Original languageEnglish
Pages (from-to)289-293
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Volume106
Issue number1-4
DOIs
Publication statusPublished - 1995 Dec 2
Externally publishedYes

Fingerprint

Ion implantation
Ion beams
ion implantation
Crystallization
ion beams
crystallization
Epitaxial growth
solid phases
bombardment
Atoms
Tensile strain
Secondary ion mass spectrometry
Ion bombardment
Structural properties
profiles
secondary ion mass spectrometry
atoms
Crystalline materials
implantation
ions

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

Ion-beam-induced epitaxial crystallisation of metastable Si1-x-yGexCy layers fabricated by Ge and C ion implantation. / Kobayashi, Naoto; Hasegawa, Masataka; Hayashi, Nobuyuki; Tanoue, Hisao; Shibata, Hajime; Makita, Yunosuke.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 106, No. 1-4, 02.12.1995, p. 289-293.

Research output: Contribution to journalArticle

Kobayashi, Naoto ; Hasegawa, Masataka ; Hayashi, Nobuyuki ; Tanoue, Hisao ; Shibata, Hajime ; Makita, Yunosuke. / Ion-beam-induced epitaxial crystallisation of metastable Si1-x-yGexCy layers fabricated by Ge and C ion implantation. In: Nuclear Inst. and Methods in Physics Research, B. 1995 ; Vol. 106, No. 1-4. pp. 289-293.
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