Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1-xCx layers in Si fabricated by C ion implantation

Naoto Kobayashi, D. H. Zhu, M. Hasegawa, H. Katsumata, Y. Tanaka, N. Hayashi, Y. Makita, H. Shibata, S. Uekusa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Amorphous Si1-xCx layers in Si(100) (0.013 ≤ x ≤ 0.032 at peak concentration) formed by 35 keV 12C implantation were crystallized by solid phase epitaxial growth (SPEG) up to 850°C and by ion-beam-induced epitaxial crystallization (IBIEC) with 400 keV Ar or Ge ions at 300-400°C. SPEG process has induced the epitaxial growth up to the surface for samples with x ≤ 0.019 and IBIEC process has induced that for samples with x ≤ 0.025. Rutherford backscattering spectrometry (RBS) measurements have revealed a direct scattering peak due to extended defects around the depth of peak C concentration both in SPEG-grown samples (x = 0.019) and IBIEC-grown sample (x = 0.025). X-ray diffraction (XRD) has shown a growth with smaller tensile strain in both SPEG- and IBIEC-grown samples than in fully strained layers. Photoluminescence (PL) measurements at 2 K have shown a strong Il line emission in IBIEC-grown samples, which can be attributed to vacancy clustering. The local configuration of defects around C atoms in the IBIEC-grown samples is thought to be an origin of the smaller tensile strain.

Original languageEnglish
Pages (from-to)350-354
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume127-128
Publication statusPublished - 1997 May
Externally publishedYes

Fingerprint

Crystallization
Epitaxial growth
Ion implantation
Ion beams
ion implantation
solid phases
ion beams
crystallization
Tensile strain
Defects
Rutherford backscattering spectroscopy
defects
Spectrometry
Vacancies
Photoluminescence
implantation
backscattering
Scattering
Ions
X ray diffraction

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1-xCx layers in Si fabricated by C ion implantation. / Kobayashi, Naoto; Zhu, D. H.; Hasegawa, M.; Katsumata, H.; Tanaka, Y.; Hayashi, N.; Makita, Y.; Shibata, H.; Uekusa, S.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 127-128, 05.1997, p. 350-354.

Research output: Contribution to journalArticle

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abstract = "Amorphous Si1-xCx layers in Si(100) (0.013 ≤ x ≤ 0.032 at peak concentration) formed by 35 keV 12C implantation were crystallized by solid phase epitaxial growth (SPEG) up to 850°C and by ion-beam-induced epitaxial crystallization (IBIEC) with 400 keV Ar or Ge ions at 300-400°C. SPEG process has induced the epitaxial growth up to the surface for samples with x ≤ 0.019 and IBIEC process has induced that for samples with x ≤ 0.025. Rutherford backscattering spectrometry (RBS) measurements have revealed a direct scattering peak due to extended defects around the depth of peak C concentration both in SPEG-grown samples (x = 0.019) and IBIEC-grown sample (x = 0.025). X-ray diffraction (XRD) has shown a growth with smaller tensile strain in both SPEG- and IBIEC-grown samples than in fully strained layers. Photoluminescence (PL) measurements at 2 K have shown a strong Il line emission in IBIEC-grown samples, which can be attributed to vacancy clustering. The local configuration of defects around C atoms in the IBIEC-grown samples is thought to be an origin of the smaller tensile strain.",
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AU - Kobayashi, Naoto

AU - Zhu, D. H.

AU - Hasegawa, M.

AU - Katsumata, H.

AU - Tanaka, Y.

AU - Hayashi, N.

AU - Makita, Y.

AU - Shibata, H.

AU - Uekusa, S.

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AB - Amorphous Si1-xCx layers in Si(100) (0.013 ≤ x ≤ 0.032 at peak concentration) formed by 35 keV 12C implantation were crystallized by solid phase epitaxial growth (SPEG) up to 850°C and by ion-beam-induced epitaxial crystallization (IBIEC) with 400 keV Ar or Ge ions at 300-400°C. SPEG process has induced the epitaxial growth up to the surface for samples with x ≤ 0.019 and IBIEC process has induced that for samples with x ≤ 0.025. Rutherford backscattering spectrometry (RBS) measurements have revealed a direct scattering peak due to extended defects around the depth of peak C concentration both in SPEG-grown samples (x = 0.019) and IBIEC-grown sample (x = 0.025). X-ray diffraction (XRD) has shown a growth with smaller tensile strain in both SPEG- and IBIEC-grown samples than in fully strained layers. Photoluminescence (PL) measurements at 2 K have shown a strong Il line emission in IBIEC-grown samples, which can be attributed to vacancy clustering. The local configuration of defects around C atoms in the IBIEC-grown samples is thought to be an origin of the smaller tensile strain.

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