Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1-xCx layers in Si fabricated by C ion implantation

Naoto Kobayashi*, D. H. Zhu, M. Hasegawa, H. Katsumata, Y. Tanaka, N. Hayashi, Y. Makita, H. Shibata, S. Uekusa

*Corresponding author for this work

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