Ion-beam-induced epitaxial crystallization of amorphous GaAs on GaAs(100)

Naoto Kobayashi, Hasegawa Masataka, Kobayashi Hisao, Hayashi Nobuyuki, Shinohara Makoto, Ohtani Fumihiko, Asari Masatoshi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Epitaxial crystallization of deposited amorphous GaAs layers on GaAs(100) up to the surface by bombardments with 400 keV Ar and 400 keV Kr has been successfully performed at a temperature range between 125 and 200°C. Properties of crystal growth were investigated as a function of ion species (Ar and Kr), energy (400 and 800 keV), ion dose, dose rate and substrate temperature by RBS channeling experiments. The growth rate has shown a nearly linear dependence on ion fluence. Ion bombardments below 100°C have induced further amorphization beyond the initial crystal/amorphous interface. On the scale of nuclear energy deposition density, bombardments with higher electronic excitation efficiency give a small increase of the growth rate. Ar bombardments have shown a strong dependence of the growth rate on dose rate, whereas Kr bombardments have revealed a weak dependence. An apparent activation energy of 0.13 ± 0.06 eV for the crystal growth was observed.

Original languageEnglish
Pages (from-to)449-453
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Volume59-60
Issue numberPART 1
DOIs
Publication statusPublished - 1991 Jul 1
Externally publishedYes

Fingerprint

Crystallization
Ion beams
bombardment
ion beams
Ions
crystallization
Crystal growth
Amorphization
dosage
crystal growth
Ion bombardment
ions
Nuclear energy
Activation energy
Temperature
nuclear energy
Crystals
Substrates
fluence
gallium arsenide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Kobayashi, N., Masataka, H., Hisao, K., Nobuyuki, H., Makoto, S., Fumihiko, O., & Masatoshi, A. (1991). Ion-beam-induced epitaxial crystallization of amorphous GaAs on GaAs(100). Nuclear Inst. and Methods in Physics Research, B, 59-60(PART 1), 449-453. https://doi.org/10.1016/0168-583X(91)95257-E

Ion-beam-induced epitaxial crystallization of amorphous GaAs on GaAs(100). / Kobayashi, Naoto; Masataka, Hasegawa; Hisao, Kobayashi; Nobuyuki, Hayashi; Makoto, Shinohara; Fumihiko, Ohtani; Masatoshi, Asari.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 59-60, No. PART 1, 01.07.1991, p. 449-453.

Research output: Contribution to journalArticle

Kobayashi, N, Masataka, H, Hisao, K, Nobuyuki, H, Makoto, S, Fumihiko, O & Masatoshi, A 1991, 'Ion-beam-induced epitaxial crystallization of amorphous GaAs on GaAs(100)', Nuclear Inst. and Methods in Physics Research, B, vol. 59-60, no. PART 1, pp. 449-453. https://doi.org/10.1016/0168-583X(91)95257-E
Kobayashi, Naoto ; Masataka, Hasegawa ; Hisao, Kobayashi ; Nobuyuki, Hayashi ; Makoto, Shinohara ; Fumihiko, Ohtani ; Masatoshi, Asari. / Ion-beam-induced epitaxial crystallization of amorphous GaAs on GaAs(100). In: Nuclear Inst. and Methods in Physics Research, B. 1991 ; Vol. 59-60, No. PART 1. pp. 449-453.
@article{942e0dfe9d7648b8bf887a8714b2fd0d,
title = "Ion-beam-induced epitaxial crystallization of amorphous GaAs on GaAs(100)",
abstract = "Epitaxial crystallization of deposited amorphous GaAs layers on GaAs(100) up to the surface by bombardments with 400 keV Ar and 400 keV Kr has been successfully performed at a temperature range between 125 and 200°C. Properties of crystal growth were investigated as a function of ion species (Ar and Kr), energy (400 and 800 keV), ion dose, dose rate and substrate temperature by RBS channeling experiments. The growth rate has shown a nearly linear dependence on ion fluence. Ion bombardments below 100°C have induced further amorphization beyond the initial crystal/amorphous interface. On the scale of nuclear energy deposition density, bombardments with higher electronic excitation efficiency give a small increase of the growth rate. Ar bombardments have shown a strong dependence of the growth rate on dose rate, whereas Kr bombardments have revealed a weak dependence. An apparent activation energy of 0.13 ± 0.06 eV for the crystal growth was observed.",
author = "Naoto Kobayashi and Hasegawa Masataka and Kobayashi Hisao and Hayashi Nobuyuki and Shinohara Makoto and Ohtani Fumihiko and Asari Masatoshi",
year = "1991",
month = "7",
day = "1",
doi = "10.1016/0168-583X(91)95257-E",
language = "English",
volume = "59-60",
pages = "449--453",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "PART 1",

}

TY - JOUR

T1 - Ion-beam-induced epitaxial crystallization of amorphous GaAs on GaAs(100)

AU - Kobayashi, Naoto

AU - Masataka, Hasegawa

AU - Hisao, Kobayashi

AU - Nobuyuki, Hayashi

AU - Makoto, Shinohara

AU - Fumihiko, Ohtani

AU - Masatoshi, Asari

PY - 1991/7/1

Y1 - 1991/7/1

N2 - Epitaxial crystallization of deposited amorphous GaAs layers on GaAs(100) up to the surface by bombardments with 400 keV Ar and 400 keV Kr has been successfully performed at a temperature range between 125 and 200°C. Properties of crystal growth were investigated as a function of ion species (Ar and Kr), energy (400 and 800 keV), ion dose, dose rate and substrate temperature by RBS channeling experiments. The growth rate has shown a nearly linear dependence on ion fluence. Ion bombardments below 100°C have induced further amorphization beyond the initial crystal/amorphous interface. On the scale of nuclear energy deposition density, bombardments with higher electronic excitation efficiency give a small increase of the growth rate. Ar bombardments have shown a strong dependence of the growth rate on dose rate, whereas Kr bombardments have revealed a weak dependence. An apparent activation energy of 0.13 ± 0.06 eV for the crystal growth was observed.

AB - Epitaxial crystallization of deposited amorphous GaAs layers on GaAs(100) up to the surface by bombardments with 400 keV Ar and 400 keV Kr has been successfully performed at a temperature range between 125 and 200°C. Properties of crystal growth were investigated as a function of ion species (Ar and Kr), energy (400 and 800 keV), ion dose, dose rate and substrate temperature by RBS channeling experiments. The growth rate has shown a nearly linear dependence on ion fluence. Ion bombardments below 100°C have induced further amorphization beyond the initial crystal/amorphous interface. On the scale of nuclear energy deposition density, bombardments with higher electronic excitation efficiency give a small increase of the growth rate. Ar bombardments have shown a strong dependence of the growth rate on dose rate, whereas Kr bombardments have revealed a weak dependence. An apparent activation energy of 0.13 ± 0.06 eV for the crystal growth was observed.

UR - http://www.scopus.com/inward/record.url?scp=44949271165&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44949271165&partnerID=8YFLogxK

U2 - 10.1016/0168-583X(91)95257-E

DO - 10.1016/0168-583X(91)95257-E

M3 - Article

VL - 59-60

SP - 449

EP - 453

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - PART 1

ER -