Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties

Naoto Kobayashi, H. Katsumata, Y. Makita, M. Hasegawa, N. Hayashi, H. Shibata, S. Uekusa, S. Hishita

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Epitaxial layers of Si 1-x-yGe xC y on Si(100) (x=0.13 and y=0.014 at peak concentration) were formed by ion implantation of Ge ions and C ions at room temperature (RT) and by subsequent IBIEC (ion-beam-induced epitaxial crystallization) process with 400 keV Ge and Ar ions at 300-400°C and SPEG (solid phase epitaxial growth) process up to 840°C. Crystallization up to the surface both by IBIEC and SPEG processes has been confirmed with RBS- channeling analysis. X-ray diffraction experiments have demonstrated strain compensation by incorporation of C atoms for IBIEC-grown Si 1-x-yGe xC y/Si samples, whereas strain accommodation due to C precipitation has been observed for SPEG-grown Si 1-x-yGe xC y/Si samples. Photoluminescence (PL) observed at 2K from IBIEC-grown samples has shown intense I 1 peak with/without I 1 related (Ar) peak and that from SPEG-grown samples has shown G line emission. These optical properties could suggest that small vacancy agglomeration is dominant in IBIEC-grown samples and C agglomeration is dominant in SPEG-grown samples, respectively.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages189-194
Number of pages6
Volume388
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1995 Apr 171995 Apr 21

Other

OtherProceedings of the 1995 MRS Spring Meeting
CitySan Francisco, CA, USA
Period95/4/1795/4/21

Fingerprint

Crystallization
Epitaxial growth
Ion implantation
Ion beams
Structural properties
Optical properties
Ions
Agglomeration
Epitaxial layers
Vacancies
Photoluminescence
X ray diffraction
Atoms
Experiments
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kobayashi, N., Katsumata, H., Makita, Y., Hasegawa, M., Hayashi, N., Shibata, H., ... Hishita, S. (1995). Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties. In Materials Research Society Symposium - Proceedings (Vol. 388, pp. 189-194). Materials Research Society.

Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties. / Kobayashi, Naoto; Katsumata, H.; Makita, Y.; Hasegawa, M.; Hayashi, N.; Shibata, H.; Uekusa, S.; Hishita, S.

Materials Research Society Symposium - Proceedings. Vol. 388 Materials Research Society, 1995. p. 189-194.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kobayashi, N, Katsumata, H, Makita, Y, Hasegawa, M, Hayashi, N, Shibata, H, Uekusa, S & Hishita, S 1995, Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties. in Materials Research Society Symposium - Proceedings. vol. 388, Materials Research Society, pp. 189-194, Proceedings of the 1995 MRS Spring Meeting, San Francisco, CA, USA, 95/4/17.
Kobayashi N, Katsumata H, Makita Y, Hasegawa M, Hayashi N, Shibata H et al. Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties. In Materials Research Society Symposium - Proceedings. Vol. 388. Materials Research Society. 1995. p. 189-194
Kobayashi, Naoto ; Katsumata, H. ; Makita, Y. ; Hasegawa, M. ; Hayashi, N. ; Shibata, H. ; Uekusa, S. ; Hishita, S. / Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties. Materials Research Society Symposium - Proceedings. Vol. 388 Materials Research Society, 1995. pp. 189-194
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abstract = "Epitaxial layers of Si 1-x-yGe xC y on Si(100) (x=0.13 and y=0.014 at peak concentration) were formed by ion implantation of Ge ions and C ions at room temperature (RT) and by subsequent IBIEC (ion-beam-induced epitaxial crystallization) process with 400 keV Ge and Ar ions at 300-400°C and SPEG (solid phase epitaxial growth) process up to 840°C. Crystallization up to the surface both by IBIEC and SPEG processes has been confirmed with RBS- channeling analysis. X-ray diffraction experiments have demonstrated strain compensation by incorporation of C atoms for IBIEC-grown Si 1-x-yGe xC y/Si samples, whereas strain accommodation due to C precipitation has been observed for SPEG-grown Si 1-x-yGe xC y/Si samples. Photoluminescence (PL) observed at 2K from IBIEC-grown samples has shown intense I 1 peak with/without I 1 related (Ar) peak and that from SPEG-grown samples has shown G line emission. These optical properties could suggest that small vacancy agglomeration is dominant in IBIEC-grown samples and C agglomeration is dominant in SPEG-grown samples, respectively.",
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AU - Kobayashi, Naoto

AU - Katsumata, H.

AU - Makita, Y.

AU - Hasegawa, M.

AU - Hayashi, N.

AU - Shibata, H.

AU - Uekusa, S.

AU - Hishita, S.

PY - 1995

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AB - Epitaxial layers of Si 1-x-yGe xC y on Si(100) (x=0.13 and y=0.014 at peak concentration) were formed by ion implantation of Ge ions and C ions at room temperature (RT) and by subsequent IBIEC (ion-beam-induced epitaxial crystallization) process with 400 keV Ge and Ar ions at 300-400°C and SPEG (solid phase epitaxial growth) process up to 840°C. Crystallization up to the surface both by IBIEC and SPEG processes has been confirmed with RBS- channeling analysis. X-ray diffraction experiments have demonstrated strain compensation by incorporation of C atoms for IBIEC-grown Si 1-x-yGe xC y/Si samples, whereas strain accommodation due to C precipitation has been observed for SPEG-grown Si 1-x-yGe xC y/Si samples. Photoluminescence (PL) observed at 2K from IBIEC-grown samples has shown intense I 1 peak with/without I 1 related (Ar) peak and that from SPEG-grown samples has shown G line emission. These optical properties could suggest that small vacancy agglomeration is dominant in IBIEC-grown samples and C agglomeration is dominant in SPEG-grown samples, respectively.

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