Ion-beam-induced epitaxy in B-implanted silicon preamorphized with Ge ions

K. Kuriyama, Hiromi Takahashi, K. Shimoyama, N. Hayashi, M. Hasegawa, Naoto Kobayashi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The ion-beam-induced epitaxial crystallization (IBIEC) of B+-implanted Si(100) layers, which are preamorphized by Ge+ ion implantation, has been studied by a 400 keV Ar+-ion irradiation at temperature ranges from 300 to 475°C. A minimum Rutherford backscattering yield of the regrowth layer is improved to 7.8% for an Ar+ ion dose of 1.3×1016/cm2 at a substrate temperature of 400°C. The activation energy for IBIEC is estimated to be 0.22 eV. A peak of the depth B profile evaluated by secondary ion mass spectroscopy is shifted to about 35 nm toward the surface after Ar+ ion irradiation. However, the electrical activation of the implanted B atoms is restricted within about 10%. It is also demonstrated that the lateral crystallinity of the amorphous layer can be recovered selectively by the IBIEC technique.

Original languageEnglish
Pages (from-to)994-997
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume80-81
Issue numberPART 2
DOIs
Publication statusPublished - 1993
Externally publishedYes

Fingerprint

Silicon
Crystallization
Epitaxial growth
epitaxy
Ion beams
ion beams
Ions
crystallization
Ion bombardment
ion irradiation
silicon
ions
Rutherford backscattering spectroscopy
Ion implantation
ion implantation
crystallinity
backscattering
mass spectroscopy
Activation energy
Chemical activation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Ion-beam-induced epitaxy in B-implanted silicon preamorphized with Ge ions. / Kuriyama, K.; Takahashi, Hiromi; Shimoyama, K.; Hayashi, N.; Hasegawa, M.; Kobayashi, Naoto.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 80-81, No. PART 2, 1993, p. 994-997.

Research output: Contribution to journalArticle

Kuriyama, K. ; Takahashi, Hiromi ; Shimoyama, K. ; Hayashi, N. ; Hasegawa, M. ; Kobayashi, Naoto. / Ion-beam-induced epitaxy in B-implanted silicon preamorphized with Ge ions. In: Nuclear Inst. and Methods in Physics Research, B. 1993 ; Vol. 80-81, No. PART 2. pp. 994-997.
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