Engineering & Materials Science
Ion beams
100%
Epitaxial growth
99%
Crystallization
76%
Ion bombardment
75%
Ions
65%
Silicon
55%
Rutherford backscattering spectroscopy
43%
Ion implantation
31%
Crystallinity
28%
Spectroscopy
26%
Activation energy
24%
Atoms
24%
Chemical activation
21%
Temperature
18%
Substrates
16%
Physics & Astronomy
epitaxy
69%
ion beams
54%
crystallization
54%
ion irradiation
49%
silicon
37%
ions
32%
mass spectroscopy
22%
ion implantation
21%
backscattering
20%
crystallinity
20%
activation
18%
activation energy
17%
dosage
15%
temperature
13%
profiles
12%
atoms
11%
Chemical Compounds
Crystallization
49%
Rutherford Backscattering Spectroscopy
45%
Ion Implantation
43%
Secondary Ion Mass Spectroscopy
38%
Ion
27%
Dose
27%
Crystallinity
26%
Reaction Activation Energy
24%
Amorphous Material
24%
Reaction Yield
14%
Surface
11%
Ion Beam-Induced Epitaxy
11%