Ion-beam-induced in-plane a-axis oriented (0001) AlN and ScAlN thin film BAW resonators

Chiaki Masamune, Takahiko Yanagitani*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

High-Q RF bulk acoustic wave filters are still required for mobile communication applications. However, the in-plane orientation of commercial AlN films is random, despite their excellent out-of-plane c-axis orientation. We proposed combining two different orientation control techniques: self-texture for out-of-plane alignment and ion beam irradiation for in-plane alignment. To demonstrate the effectiveness of this approach, both in-plane a-axis and out-of-plane c-axis aligned AlN and ScAlN films were grown on Ti/silica glass substrates using 0.3-0.5 keV grazing ion-beam-assisted RF sputtering technique without using epitaxial growth. The clear six symmetry in the pole-figure observed in AlN and ScAlN thin films indicates the single-crystal-like in-plane a-axis orientation. The ion beam direction corresponded to the in-plane ?101?0? axis. In-plane x-ray diffraction φ-scan curve and ω-scan curve FWHM were measured to be 25° and 2.2°.

Original languageEnglish
Article number125215
JournalAIP Advances
Volume11
Issue number12
DOIs
Publication statusPublished - 2021 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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