Abstract
Ion-beam-induced crystallization in silicon preamorphized by Ge-ion implantation was studied by combined means of Rutherford backscattering and channeling, and positron annihilation. The epitaxial regrowth of amorphous surface layers in a (100) Si substrate has been studied with irradiation of 400-keV Ar+ ions at the temperature of 400°C. The ion-beam-induced epitaxy was found to result in a drastic increase in the positron lifetime to a maximum value of 400 psec in the recrystallized silicon layer. It is demonstrated that vacancy migration is promoted during the epitaxial recrystallization to form defect complexes like trivacancies and/or quadrivacancies.
| Original language | English |
|---|---|
| Pages (from-to) | 45-48 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 70 |
| Issue number | 1 |
| Publication status | Published - 1993 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Hayashi, N., Suzuki, R., Hasegawa, M., Kobayashi, N., Tanigawa, S., & Mikado, T. (1993). Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and rutherford backscattering and channeling. Physical Review Letters, 70(1), 45-48.