Abstract
Ion-beam-induced crystallization in silicon preamorphized by Ge-ion implantation was studied by combined means of Rutherford backscattering and channeling, and positron annihilation. The epitaxial regrowth of amorphous surface layers in a (100) Si substrate has been studied with irradiation of 400-keV Ar+ ions at the temperature of 400°C. The ion-beam-induced epitaxy was found to result in a drastic increase in the positron lifetime to a maximum value of 400 psec in the recrystallized silicon layer. It is demonstrated that vacancy migration is promoted during the epitaxial recrystallization to form defect complexes like trivacancies and/or quadrivacancies.
| Original language | English |
|---|---|
| Pages (from-to) | 45-48 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 70 |
| Issue number | 1 |
| Publication status | Published - 1993 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and rutherford backscattering and channeling. / Hayashi, N.; Suzuki, R.; Hasegawa, M.; Kobayashi, Naoto; Tanigawa, S.; Mikado, T.
In: Physical Review Letters, Vol. 70, No. 1, 1993, p. 45-48.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and rutherford backscattering and channeling
AU - Hayashi, N.
AU - Suzuki, R.
AU - Hasegawa, M.
AU - Kobayashi, Naoto
AU - Tanigawa, S.
AU - Mikado, T.
PY - 1993
Y1 - 1993
N2 - Ion-beam-induced crystallization in silicon preamorphized by Ge-ion implantation was studied by combined means of Rutherford backscattering and channeling, and positron annihilation. The epitaxial regrowth of amorphous surface layers in a (100) Si substrate has been studied with irradiation of 400-keV Ar+ ions at the temperature of 400°C. The ion-beam-induced epitaxy was found to result in a drastic increase in the positron lifetime to a maximum value of 400 psec in the recrystallized silicon layer. It is demonstrated that vacancy migration is promoted during the epitaxial recrystallization to form defect complexes like trivacancies and/or quadrivacancies.
AB - Ion-beam-induced crystallization in silicon preamorphized by Ge-ion implantation was studied by combined means of Rutherford backscattering and channeling, and positron annihilation. The epitaxial regrowth of amorphous surface layers in a (100) Si substrate has been studied with irradiation of 400-keV Ar+ ions at the temperature of 400°C. The ion-beam-induced epitaxy was found to result in a drastic increase in the positron lifetime to a maximum value of 400 psec in the recrystallized silicon layer. It is demonstrated that vacancy migration is promoted during the epitaxial recrystallization to form defect complexes like trivacancies and/or quadrivacancies.
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M3 - Article
AN - SCOPUS:0002691973
VL - 70
SP - 45
EP - 48
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 1
ER -