Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and rutherford backscattering and channeling

N. Hayashi; R. Suzuki; M. Hasegawa; Naoto Kobayashi; S. Tanigawa; T. Mikado

Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and rutherford backscattering and channeling

N. Hayashi, R. Suzuki, M. Hasegawa, Naoto Kobayashi, S. Tanigawa, T. Mikado

Research output: Contribution to journal › Article › peer-review

Abstract

Ion-beam-induced crystallization in silicon preamorphized by Ge-ion implantation was studied by combined means of Rutherford backscattering and channeling, and positron annihilation. The epitaxial regrowth of amorphous surface layers in a (100) Si substrate has been studied with irradiation of 400-keV Ar⁺ ions at the temperature of 400°C. The ion-beam-induced epitaxy was found to result in a drastic increase in the positron lifetime to a maximum value of 400 psec in the recrystallized silicon layer. It is demonstrated that vacancy migration is promoted during the epitaxial recrystallization to form defect complexes like trivacancies and/or quadrivacancies.

Original language	English
Pages (from-to)	45-48
Number of pages	4
Journal	Physical Review Letters
Volume	70
Issue number	1
Publication status	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and rutherford backscattering and channeling",

abstract = "Ion-beam-induced crystallization in silicon preamorphized by Ge-ion implantation was studied by combined means of Rutherford backscattering and channeling, and positron annihilation. The epitaxial regrowth of amorphous surface layers in a (100) Si substrate has been studied with irradiation of 400-keV Ar+ ions at the temperature of 400°C. The ion-beam-induced epitaxy was found to result in a drastic increase in the positron lifetime to a maximum value of 400 psec in the recrystallized silicon layer. It is demonstrated that vacancy migration is promoted during the epitaxial recrystallization to form defect complexes like trivacancies and/or quadrivacancies.",

author = "N. Hayashi and R. Suzuki and M. Hasegawa and Naoto Kobayashi and S. Tanigawa and T. Mikado",

year = "1993",

language = "English",

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pages = "45--48",

journal = "Physical Review Letters",

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T1 - Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and rutherford backscattering and channeling

AU - Hayashi, N.

AU - Suzuki, R.

AU - Hasegawa, M.

AU - Kobayashi, Naoto

AU - Tanigawa, S.

AU - Mikado, T.

PY - 1993

Y1 - 1993

N2 - Ion-beam-induced crystallization in silicon preamorphized by Ge-ion implantation was studied by combined means of Rutherford backscattering and channeling, and positron annihilation. The epitaxial regrowth of amorphous surface layers in a (100) Si substrate has been studied with irradiation of 400-keV Ar+ ions at the temperature of 400°C. The ion-beam-induced epitaxy was found to result in a drastic increase in the positron lifetime to a maximum value of 400 psec in the recrystallized silicon layer. It is demonstrated that vacancy migration is promoted during the epitaxial recrystallization to form defect complexes like trivacancies and/or quadrivacancies.

AB - Ion-beam-induced crystallization in silicon preamorphized by Ge-ion implantation was studied by combined means of Rutherford backscattering and channeling, and positron annihilation. The epitaxial regrowth of amorphous surface layers in a (100) Si substrate has been studied with irradiation of 400-keV Ar+ ions at the temperature of 400°C. The ion-beam-induced epitaxy was found to result in a drastic increase in the positron lifetime to a maximum value of 400 psec in the recrystallized silicon layer. It is demonstrated that vacancy migration is promoted during the epitaxial recrystallization to form defect complexes like trivacancies and/or quadrivacancies.

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