Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and rutherford backscattering and channeling

N. Hayashi, R. Suzuki, M. Hasegawa, Naoto Kobayashi, S. Tanigawa, T. Mikado

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Ion-beam-induced crystallization in silicon preamorphized by Ge-ion implantation was studied by combined means of Rutherford backscattering and channeling, and positron annihilation. The epitaxial regrowth of amorphous surface layers in a (100) Si substrate has been studied with irradiation of 400-keV Ar+ ions at the temperature of 400°C. The ion-beam-induced epitaxy was found to result in a drastic increase in the positron lifetime to a maximum value of 400 psec in the recrystallized silicon layer. It is demonstrated that vacancy migration is promoted during the epitaxial recrystallization to form defect complexes like trivacancies and/or quadrivacancies.

Original languageEnglish
Pages (from-to)45-48
Number of pages4
JournalPhysical Review Letters
Volume70
Issue number1
Publication statusPublished - 1993
Externally publishedYes

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positron annihilation
backscattering
ion beams
silicon
epitaxy
ion implantation
positrons
surface layers
crystallization
life (durability)
irradiation
defects
ions
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and rutherford backscattering and channeling. / Hayashi, N.; Suzuki, R.; Hasegawa, M.; Kobayashi, Naoto; Tanigawa, S.; Mikado, T.

In: Physical Review Letters, Vol. 70, No. 1, 1993, p. 45-48.

Research output: Contribution to journalArticle

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AU - Suzuki, R.

AU - Hasegawa, M.

AU - Kobayashi, Naoto

AU - Tanigawa, S.

AU - Mikado, T.

PY - 1993

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