TY - JOUR
T1 - Ion beam irradiation effects on resist materials
AU - Gowa, Tomoko
AU - Takahashi, Tomohiro
AU - Oka, Toshitaka
AU - Murakami, Takeshi
AU - Oshima, Akihiro
AU - Tagawa, Seiichi
AU - Washio, Masakazu
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - 6 MeV/u ion beams such as Si14+, Ar18+, Kr36+ and Xe54+ and 30 kV Ga+ focused ion beam (FIB) were irradiated to a chemically amplified deep-UV resist TDUR-P722 (Tokyo Ohka Kogyo) and electron beam (EB) resists ZEP520A and ZEP7000 (ZEON). Clear patterns were obtained on all resists for high energy ion beams, and it was confirmed that resist sensitivities were correlated with the energy deposition. In contrast, high flux FIB irradiation induced crosslinking reactions of resist polymers, and positive-negative inversion took place.
AB - 6 MeV/u ion beams such as Si14+, Ar18+, Kr36+ and Xe54+ and 30 kV Ga+ focused ion beam (FIB) were irradiated to a chemically amplified deep-UV resist TDUR-P722 (Tokyo Ohka Kogyo) and electron beam (EB) resists ZEP520A and ZEP7000 (ZEON). Clear patterns were obtained on all resists for high energy ion beams, and it was confirmed that resist sensitivities were correlated with the energy deposition. In contrast, high flux FIB irradiation induced crosslinking reactions of resist polymers, and positive-negative inversion took place.
KW - Focused ion beam (FIB)
KW - Heavy ion beam
KW - Liner energy transfer (LET)
KW - Positive-negative inversion
KW - Resist
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U2 - 10.2494/photopolymer.23.399
DO - 10.2494/photopolymer.23.399
M3 - Article
AN - SCOPUS:77957159738
VL - 23
SP - 399
EP - 404
JO - Journal of Photopolymer Science and Technology
JF - Journal of Photopolymer Science and Technology
SN - 0914-9244
IS - 3
ER -