Ion beam irradiation effects on resist materials

Tomoko Gowa, Tomohiro Takahashi, Toshitaka Oka, Takeshi Murakami, Akihiro Oshima, Seiichi Tagawa, Masakazu Washio

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

6 MeV/u ion beams such as Si14+, Ar18+, Kr36+ and Xe54+ and 30 kV Ga+ focused ion beam (FIB) were irradiated to a chemically amplified deep-UV resist TDUR-P722 (Tokyo Ohka Kogyo) and electron beam (EB) resists ZEP520A and ZEP7000 (ZEON). Clear patterns were obtained on all resists for high energy ion beams, and it was confirmed that resist sensitivities were correlated with the energy deposition. In contrast, high flux FIB irradiation induced crosslinking reactions of resist polymers, and positive-negative inversion took place.

Original languageEnglish
Pages (from-to)399-404
Number of pages6
JournalJournal of Photopolymer Science and Technology
Volume23
Issue number3
DOIs
Publication statusPublished - 2010 Oct 1

Keywords

  • Focused ion beam (FIB)
  • Heavy ion beam
  • Liner energy transfer (LET)
  • Positive-negative inversion
  • Resist

ASJC Scopus subject areas

  • Polymers and Plastics
  • Organic Chemistry
  • Materials Chemistry

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    Gowa, T., Takahashi, T., Oka, T., Murakami, T., Oshima, A., Tagawa, S., & Washio, M. (2010). Ion beam irradiation effects on resist materials. Journal of Photopolymer Science and Technology, 23(3), 399-404. https://doi.org/10.2494/photopolymer.23.399