Ion beam irradiation effects on resist materials

Tomoko Gowa, Tomohiro Takahashi, Toshitaka Oka, Takeshi Murakami, Akihiro Oshima, Seiichi Tagawa, Masakazu Washio

    Research output: Contribution to journal › Article

    5 Citations (Scopus)

    Abstract

    6 MeV/u ion beams such as Si14+, Ar18+, Kr36+ and Xe54+ and 30 kV Ga+ focused ion beam (FIB) were irradiated to a chemically amplified deep-UV resist TDUR-P722 (Tokyo Ohka Kogyo) and electron beam (EB) resists ZEP520A and ZEP7000 (ZEON). Clear patterns were obtained on all resists for high energy ion beams, and it was confirmed that resist sensitivities were correlated with the energy deposition. In contrast, high flux FIB irradiation induced crosslinking reactions of resist polymers, and positive-negative inversion took place.

    Original languageEnglish
    Pages (from-to)399-404
    Number of pages6
    JournalJournal of Photopolymer Science and Technology
    Volume23
    Issue number3
    DOIs
    Publication statusPublished - 2010

    Fingerprint

    Focused ion beams
    Ion beams
    Irradiation
    Crosslinking
    Electron beams
    Polymers
    Fluxes

    Keywords

    • Focused ion beam (FIB)
    • Heavy ion beam
    • Liner energy transfer (LET)
    • Positive-negative inversion
    • Resist

    ASJC Scopus subject areas

    • Materials Chemistry
    • Polymers and Plastics
    • Organic Chemistry

    Cite this

    Gowa, T., Takahashi, T., Oka, T., Murakami, T., Oshima, A., Tagawa, S., & Washio, M. (2010). Ion beam irradiation effects on resist materials. Journal of Photopolymer Science and Technology, 23(3), 399-404. https://doi.org/10.2494/photopolymer.23.399

    Ion beam irradiation effects on resist materials. / Gowa, Tomoko; Takahashi, Tomohiro; Oka, Toshitaka; Murakami, Takeshi; Oshima, Akihiro; Tagawa, Seiichi; Washio, Masakazu.

    In: Journal of Photopolymer Science and Technology, Vol. 23, No. 3, 2010, p. 399-404.

    Research output: Contribution to journal › Article

    Gowa, T, Takahashi, T, Oka, T, Murakami, T, Oshima, A, Tagawa, S & Washio, M 2010, 'Ion beam irradiation effects on resist materials', Journal of Photopolymer Science and Technology, vol. 23, no. 3, pp. 399-404. https://doi.org/10.2494/photopolymer.23.399
    Gowa T, Takahashi T, Oka T, Murakami T, Oshima A, Tagawa S et al. Ion beam irradiation effects on resist materials. Journal of Photopolymer Science and Technology. 2010;23(3):399-404. https://doi.org/10.2494/photopolymer.23.399
    Gowa, Tomoko ; Takahashi, Tomohiro ; Oka, Toshitaka ; Murakami, Takeshi ; Oshima, Akihiro ; Tagawa, Seiichi ; Washio, Masakazu. / Ion beam irradiation effects on resist materials. In: Journal of Photopolymer Science and Technology. 2010 ; Vol. 23, No. 3. pp. 399-404.
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    AU - Takahashi, Tomohiro

    AU - Oka, Toshitaka

    AU - Murakami, Takeshi

    AU - Oshima, Akihiro

    AU - Tagawa, Seiichi

    AU - Washio, Masakazu

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