Ion beam irradiation effects on resist materials

Tomoko Gowa; Tomohiro Takahashi; Toshitaka Oka; Takeshi Murakami; Akihiro Oshima; Seiichi Tagawa; Masakazu Washio

doi:10.2494/photopolymer.23.399

Ion beam irradiation effects on resist materials

Tomoko Gowa, Tomohiro Takahashi, Toshitaka Oka, Takeshi Murakami, Akihiro Oshima, Seiichi Tagawa, Masakazu Washio

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

6 MeV/u ion beams such as Si¹⁴⁺, Ar¹⁸⁺, Kr³⁶⁺ and Xe⁵⁴⁺ and 30 kV Ga⁺ focused ion beam (FIB) were irradiated to a chemically amplified deep-UV resist TDUR-P722 (Tokyo Ohka Kogyo) and electron beam (EB) resists ZEP520A and ZEP7000 (ZEON). Clear patterns were obtained on all resists for high energy ion beams, and it was confirmed that resist sensitivities were correlated with the energy deposition. In contrast, high flux FIB irradiation induced crosslinking reactions of resist polymers, and positive-negative inversion took place.

Original language	English
Pages (from-to)	399-404
Number of pages	6
Journal	Journal of Photopolymer Science and Technology
Volume	23
Issue number	3
DOIs	https://doi.org/10.2494/photopolymer.23.399
Publication status	Published - 2010

Keywords

Focused ion beam (FIB)
Heavy ion beam
Liner energy transfer (LET)
Positive-negative inversion
Resist

ASJC Scopus subject areas

Polymers and Plastics
Organic Chemistry
Materials Chemistry

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title = "Ion beam irradiation effects on resist materials",

abstract = "6 MeV/u ion beams such as Si14+, Ar18+, Kr36+ and Xe54+ and 30 kV Ga+ focused ion beam (FIB) were irradiated to a chemically amplified deep-UV resist TDUR-P722 (Tokyo Ohka Kogyo) and electron beam (EB) resists ZEP520A and ZEP7000 (ZEON). Clear patterns were obtained on all resists for high energy ion beams, and it was confirmed that resist sensitivities were correlated with the energy deposition. In contrast, high flux FIB irradiation induced crosslinking reactions of resist polymers, and positive-negative inversion took place.",

keywords = "Focused ion beam (FIB), Heavy ion beam, Liner energy transfer (LET), Positive-negative inversion, Resist",

author = "Tomoko Gowa and Tomohiro Takahashi and Toshitaka Oka and Takeshi Murakami and Akihiro Oshima and Seiichi Tagawa and Masakazu Washio",

year = "2010",

doi = "10.2494/photopolymer.23.399",

language = "English",

volume = "23",

pages = "399--404",

journal = "Journal of Photopolymer Science and Technology",

issn = "0914-9244",

publisher = "Tokai University",

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TY - JOUR

T1 - Ion beam irradiation effects on resist materials

AU - Gowa, Tomoko

AU - Takahashi, Tomohiro

AU - Oka, Toshitaka

AU - Murakami, Takeshi

AU - Oshima, Akihiro

AU - Tagawa, Seiichi

AU - Washio, Masakazu

PY - 2010

Y1 - 2010

N2 - 6 MeV/u ion beams such as Si14+, Ar18+, Kr36+ and Xe54+ and 30 kV Ga+ focused ion beam (FIB) were irradiated to a chemically amplified deep-UV resist TDUR-P722 (Tokyo Ohka Kogyo) and electron beam (EB) resists ZEP520A and ZEP7000 (ZEON). Clear patterns were obtained on all resists for high energy ion beams, and it was confirmed that resist sensitivities were correlated with the energy deposition. In contrast, high flux FIB irradiation induced crosslinking reactions of resist polymers, and positive-negative inversion took place.

AB - 6 MeV/u ion beams such as Si14+, Ar18+, Kr36+ and Xe54+ and 30 kV Ga+ focused ion beam (FIB) were irradiated to a chemically amplified deep-UV resist TDUR-P722 (Tokyo Ohka Kogyo) and electron beam (EB) resists ZEP520A and ZEP7000 (ZEON). Clear patterns were obtained on all resists for high energy ion beams, and it was confirmed that resist sensitivities were correlated with the energy deposition. In contrast, high flux FIB irradiation induced crosslinking reactions of resist polymers, and positive-negative inversion took place.

KW - Focused ion beam (FIB)

KW - Heavy ion beam

KW - Liner energy transfer (LET)

KW - Positive-negative inversion

KW - Resist

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