ION IRRADIATION AND ANNEALING STUDIES OF NbC THIN FILMS.

Naoto Kobayashi, R. Kaufmann, G. Linker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Single-phase NbC thin films, prepared by reactive RF sputtering, have been irradiated with 600 keV Ar ions and 200 keV He ions at room temperature in the fluence range from 0. 01 to 100 dpa. With the preservation of the B1 structure, the lattice parameter, a//o, increases at the first stage of the irradiation and then decreases down to a saturation value for higher fluences. The superconducting transition temperature, T//c, decreases continuously from 11. 2 K to 4 K and saturates in the fluence range of a//o saturation. The effects of both ion species irradiations on the changes of the lattice parameter and T//c depressions are nearly the same at a given dpa. Isochronal annealing processes of the sample that has the maximum lattice parameter have revealed a few recovery stages of the lattice parameter and T//c. The recovery stage at 700 degree C coincides with the recovery of the displacements of the metal atoms.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
Place of PublicationAmsterdam, Ne
PublisherNorth-Holland
Pages732-735
Number of pages4
Publication statusPublished - 1985
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Kobayashi, N., Kaufmann, R., & Linker, G. (1985). ION IRRADIATION AND ANNEALING STUDIES OF NbC THIN FILMS. In Unknown Host Publication Title (pp. 732-735). North-Holland.