Ion modification for improvement of electrical properties of perovskite-based ferroelectric thin films fabricated by chemical solution deposition method

Hiroshi Uchida, Shintaro Yasui, Risako Ueno, Hiroshi Nakaki, Ken Nishida, Minoru Osada, Hiroslii Funakubo, Takushi Katoda, Seiichiro Koda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ion modification for various perovskite-based ferroelectric thin film using rare-earth cation was attempted for improving the electrical properties. Strategy for controlling the electrical properties is mainly based on two concepts, that is, (i) substituting the volatile cations such as Pb2+ and Bi3+, and (ii) controlling the crystal anisotropy of perovskite unit cell. In this study, the influences of ion-modification conditions (i.e., amount, species and occupying site of substituent cations) on the electrical properties of perovskitc-bascd ferroelectric films fabricated by a chemical solution deposition were investigated, Substituting volatile cation in simple-perovskite oxides, such Pb2+ in Pb(Zr,Ti)O3 and Bi3+ in BiFeO3, for the rare-earth cations like La 3+ and Nd3+ reduced the leakage current density of these films due to suppressing the metal and / or oxygen vacancies, as well as in layered-perovskite oxides, such as Bi4Ti3O12 films [i.e., strategy (i)]. Also, crystal anisotropy of perovskite-bascd oxides could controlled by varying the species and the occupying site of substituent cations [i.e., strategy (ii)]; for example, the ciystal anisotropy of Pb(Zr,Ti)O3 lattice was elongated by Ti- and Zr-site (B-site) substitution using rare-earth cations whose ionic radii locate on the smaller part of rare-earth scries (such as Y3+, Dy3+), that resulted in enhancing the spontaneous polarization from 20 to 25 μC/cm, We concluded that the strategy for controlling the electrical property mentioned in this study would be applicable for a various kind of perovskite-based ferroelectric films.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages147-152
Number of pages6
Volume902
Publication statusPublished - 2005
Externally publishedYes
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: 2005 Nov 282005 Dec 2

Other

Other2005 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period05/11/2805/12/2

Fingerprint

Ferroelectric thin films
Perovskite
Cations
Electric properties
Positive ions
Ions
Rare earths
Oxides
Ferroelectric films
Anisotropy
Crystals
Oxygen vacancies
perovskite
Leakage currents
Substitution reactions
Current density
Metals
Polarization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Uchida, H., Yasui, S., Ueno, R., Nakaki, H., Nishida, K., Osada, M., ... Koda, S. (2005). Ion modification for improvement of electrical properties of perovskite-based ferroelectric thin films fabricated by chemical solution deposition method. In Materials Research Society Symposium Proceedings (Vol. 902, pp. 147-152)

Ion modification for improvement of electrical properties of perovskite-based ferroelectric thin films fabricated by chemical solution deposition method. / Uchida, Hiroshi; Yasui, Shintaro; Ueno, Risako; Nakaki, Hiroshi; Nishida, Ken; Osada, Minoru; Funakubo, Hiroslii; Katoda, Takushi; Koda, Seiichiro.

Materials Research Society Symposium Proceedings. Vol. 902 2005. p. 147-152.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uchida, H, Yasui, S, Ueno, R, Nakaki, H, Nishida, K, Osada, M, Funakubo, H, Katoda, T & Koda, S 2005, Ion modification for improvement of electrical properties of perovskite-based ferroelectric thin films fabricated by chemical solution deposition method. in Materials Research Society Symposium Proceedings. vol. 902, pp. 147-152, 2005 MRS Fall Meeting, Boston, MA, United States, 05/11/28.
Uchida H, Yasui S, Ueno R, Nakaki H, Nishida K, Osada M et al. Ion modification for improvement of electrical properties of perovskite-based ferroelectric thin films fabricated by chemical solution deposition method. In Materials Research Society Symposium Proceedings. Vol. 902. 2005. p. 147-152
Uchida, Hiroshi ; Yasui, Shintaro ; Ueno, Risako ; Nakaki, Hiroshi ; Nishida, Ken ; Osada, Minoru ; Funakubo, Hiroslii ; Katoda, Takushi ; Koda, Seiichiro. / Ion modification for improvement of electrical properties of perovskite-based ferroelectric thin films fabricated by chemical solution deposition method. Materials Research Society Symposium Proceedings. Vol. 902 2005. pp. 147-152
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AU - Uchida, Hiroshi

AU - Yasui, Shintaro

AU - Ueno, Risako

AU - Nakaki, Hiroshi

AU - Nishida, Ken

AU - Osada, Minoru

AU - Funakubo, Hiroslii

AU - Katoda, Takushi

AU - Koda, Seiichiro

PY - 2005

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N2 - Ion modification for various perovskite-based ferroelectric thin film using rare-earth cation was attempted for improving the electrical properties. Strategy for controlling the electrical properties is mainly based on two concepts, that is, (i) substituting the volatile cations such as Pb2+ and Bi3+, and (ii) controlling the crystal anisotropy of perovskite unit cell. In this study, the influences of ion-modification conditions (i.e., amount, species and occupying site of substituent cations) on the electrical properties of perovskitc-bascd ferroelectric films fabricated by a chemical solution deposition were investigated, Substituting volatile cation in simple-perovskite oxides, such Pb2+ in Pb(Zr,Ti)O3 and Bi3+ in BiFeO3, for the rare-earth cations like La 3+ and Nd3+ reduced the leakage current density of these films due to suppressing the metal and / or oxygen vacancies, as well as in layered-perovskite oxides, such as Bi4Ti3O12 films [i.e., strategy (i)]. Also, crystal anisotropy of perovskite-bascd oxides could controlled by varying the species and the occupying site of substituent cations [i.e., strategy (ii)]; for example, the ciystal anisotropy of Pb(Zr,Ti)O3 lattice was elongated by Ti- and Zr-site (B-site) substitution using rare-earth cations whose ionic radii locate on the smaller part of rare-earth scries (such as Y3+, Dy3+), that resulted in enhancing the spontaneous polarization from 20 to 25 μC/cm, We concluded that the strategy for controlling the electrical property mentioned in this study would be applicable for a various kind of perovskite-based ferroelectric films.

AB - Ion modification for various perovskite-based ferroelectric thin film using rare-earth cation was attempted for improving the electrical properties. Strategy for controlling the electrical properties is mainly based on two concepts, that is, (i) substituting the volatile cations such as Pb2+ and Bi3+, and (ii) controlling the crystal anisotropy of perovskite unit cell. In this study, the influences of ion-modification conditions (i.e., amount, species and occupying site of substituent cations) on the electrical properties of perovskitc-bascd ferroelectric films fabricated by a chemical solution deposition were investigated, Substituting volatile cation in simple-perovskite oxides, such Pb2+ in Pb(Zr,Ti)O3 and Bi3+ in BiFeO3, for the rare-earth cations like La 3+ and Nd3+ reduced the leakage current density of these films due to suppressing the metal and / or oxygen vacancies, as well as in layered-perovskite oxides, such as Bi4Ti3O12 films [i.e., strategy (i)]. Also, crystal anisotropy of perovskite-bascd oxides could controlled by varying the species and the occupying site of substituent cations [i.e., strategy (ii)]; for example, the ciystal anisotropy of Pb(Zr,Ti)O3 lattice was elongated by Ti- and Zr-site (B-site) substitution using rare-earth cations whose ionic radii locate on the smaller part of rare-earth scries (such as Y3+, Dy3+), that resulted in enhancing the spontaneous polarization from 20 to 25 μC/cm, We concluded that the strategy for controlling the electrical property mentioned in this study would be applicable for a various kind of perovskite-based ferroelectric films.

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