Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures

Yamaguchi Takahide, Yosuke Sasama, Hiroyuki Takeya, Yoshihiko Takano, Taisuke Kageura, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    The ionic-liquid-gating technique can be applied to the search for novel physical phenomena at low temperatures because of its wide controllability of the charge carrier density. Ionic-liquid-gated field-effect transistors are often fragile upon cooling, however, because of the large difference between the thermal expansion coefficients of frozen ionic liquids and solid target materials. In this paper, we provide a practical technique for setting up ionic-liquid-gated field-effect transistors for low-temperature measurements. It allows stable measurements and reduces the electronic inhomogeneity by reducing the shear strain generated in frozen ionic liquid.

    Original languageEnglish
    Article number103903
    JournalReview of Scientific Instruments
    Volume89
    Issue number10
    DOIs
    Publication statusPublished - 2018 Oct 1

      Fingerprint

    ASJC Scopus subject areas

    • Instrumentation

    Cite this