Irradiation characteristics of metal-cluster-complex ions containing diverse multi-elements with large mass differences

Yukio Fujiwara, Kouji Kondou, Yoshikazu Teranishi, Hidehiko Nonaka, Naoaki Saito, Toshiyuki Fujimoto, Akira Kurokawa, Shingo Ichimura, Mitsuhiro Tomita

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Tetrairidium dodecacarbonyl, Ir4(CO)12, is a metal cluster complex which has a molecular weight of 1104.9. Using a metal-cluster-complex ion source, the interaction between Ir4 (CO)n + ions (n = 0-12) and silicon substrates was studied at a beam energy ranging from 2 keV to 10 keV at normal incidence. By adjusting Wien-filter voltage, the influence of CO ligands was investigated. Experimental results showed that sputtering yield of silicon bombarded with Ir4 (CO)n + ions at 10 keV decreased with the number of CO ligands. In the case of 2 keV, deposition tended to be suppressed by removing CO ligands from the impinging cluster ions. The influence of CO ligands was explained by considering changes in surface properties caused by the irradiation of Ir4 (CO)n + ions. It was also found that the bombardment with Ir4 (CO)7 +ions at 2.5 keV caused deposition on silicon target.

Original languageEnglish
Pages (from-to)653-657
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume257
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2007 Apr 1
Externally publishedYes

Fingerprint

metal clusters
Chemical elements
Irradiation
irradiation
Ligands
Ions
Metals
ligands
ions
Silicon
silicon
Ion sources
ion sources
surface properties
Surface properties
Sputtering
bombardment
molecular weight
incidence
sputtering

Keywords

  • Deposition
  • Ion beam
  • Ir(CO)
  • Metal cluster complex
  • Sputtering

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

Irradiation characteristics of metal-cluster-complex ions containing diverse multi-elements with large mass differences. / Fujiwara, Yukio; Kondou, Kouji; Teranishi, Yoshikazu; Nonaka, Hidehiko; Saito, Naoaki; Fujimoto, Toshiyuki; Kurokawa, Akira; Ichimura, Shingo; Tomita, Mitsuhiro.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 257, No. 1-2 SPEC. ISS., 01.04.2007, p. 653-657.

Research output: Contribution to journalArticle

Fujiwara, Yukio ; Kondou, Kouji ; Teranishi, Yoshikazu ; Nonaka, Hidehiko ; Saito, Naoaki ; Fujimoto, Toshiyuki ; Kurokawa, Akira ; Ichimura, Shingo ; Tomita, Mitsuhiro. / Irradiation characteristics of metal-cluster-complex ions containing diverse multi-elements with large mass differences. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2007 ; Vol. 257, No. 1-2 SPEC. ISS. pp. 653-657.
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AU - Saito, Naoaki

AU - Fujimoto, Toshiyuki

AU - Kurokawa, Akira

AU - Ichimura, Shingo

AU - Tomita, Mitsuhiro

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AB - Tetrairidium dodecacarbonyl, Ir4(CO)12, is a metal cluster complex which has a molecular weight of 1104.9. Using a metal-cluster-complex ion source, the interaction between Ir4 (CO)n + ions (n = 0-12) and silicon substrates was studied at a beam energy ranging from 2 keV to 10 keV at normal incidence. By adjusting Wien-filter voltage, the influence of CO ligands was investigated. Experimental results showed that sputtering yield of silicon bombarded with Ir4 (CO)n + ions at 10 keV decreased with the number of CO ligands. In the case of 2 keV, deposition tended to be suppressed by removing CO ligands from the impinging cluster ions. The influence of CO ligands was explained by considering changes in surface properties caused by the irradiation of Ir4 (CO)n + ions. It was also found that the bombardment with Ir4 (CO)7 +ions at 2.5 keV caused deposition on silicon target.

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