TY - JOUR
T1 - Irradiation characteristics of metal-cluster-complex ions containing diverse multi-elements with large mass differences
AU - Fujiwara, Yukio
AU - Kondou, Kouji
AU - Teranishi, Yoshikazu
AU - Nonaka, Hidehiko
AU - Saito, Naoaki
AU - Fujimoto, Toshiyuki
AU - Kurokawa, Akira
AU - Ichimura, Shingo
AU - Tomita, Mitsuhiro
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007/4
Y1 - 2007/4
N2 - Tetrairidium dodecacarbonyl, Ir4(CO)12, is a metal cluster complex which has a molecular weight of 1104.9. Using a metal-cluster-complex ion source, the interaction between Ir4 (CO)n+ ions (n = 0-12) and silicon substrates was studied at a beam energy ranging from 2 keV to 10 keV at normal incidence. By adjusting Wien-filter voltage, the influence of CO ligands was investigated. Experimental results showed that sputtering yield of silicon bombarded with Ir4 (CO)n+ ions at 10 keV decreased with the number of CO ligands. In the case of 2 keV, deposition tended to be suppressed by removing CO ligands from the impinging cluster ions. The influence of CO ligands was explained by considering changes in surface properties caused by the irradiation of Ir4 (CO)n+ ions. It was also found that the bombardment with Ir4 (CO)7+ions at 2.5 keV caused deposition on silicon target.
AB - Tetrairidium dodecacarbonyl, Ir4(CO)12, is a metal cluster complex which has a molecular weight of 1104.9. Using a metal-cluster-complex ion source, the interaction between Ir4 (CO)n+ ions (n = 0-12) and silicon substrates was studied at a beam energy ranging from 2 keV to 10 keV at normal incidence. By adjusting Wien-filter voltage, the influence of CO ligands was investigated. Experimental results showed that sputtering yield of silicon bombarded with Ir4 (CO)n+ ions at 10 keV decreased with the number of CO ligands. In the case of 2 keV, deposition tended to be suppressed by removing CO ligands from the impinging cluster ions. The influence of CO ligands was explained by considering changes in surface properties caused by the irradiation of Ir4 (CO)n+ ions. It was also found that the bombardment with Ir4 (CO)7+ions at 2.5 keV caused deposition on silicon target.
KW - Deposition
KW - Ion beam
KW - Ir(CO)
KW - Metal cluster complex
KW - Sputtering
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U2 - 10.1016/j.nimb.2007.01.052
DO - 10.1016/j.nimb.2007.01.052
M3 - Article
AN - SCOPUS:33947628575
VL - 257
SP - 653
EP - 657
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-2 SPEC. ISS.
ER -