Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond

D. L. Creedon, Y. Jiang, K. Ganesan, A. Stacey, Taisuke Kageura, Hiroshi Kawarada, J. C. McCallum, B. C. Johnson, S. Prawer, D. N. Jamieson

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemical vapor deposition where the boron concentration exceeds the critical concentration for the metal-to-insulator transition of nMIT4×1020/cm3. While the threshold carrier concentration for superconductivity is generally well established in the literature, it is unclear how well correlated higher critical temperatures are with increased boron concentration. Previous studies have generally compared several samples grown under different plasma conditions, or on substrates having different crystallographic orientations, in order to vary the incorporation of boron into the lattice. Here, we present a study of a single sample with unchanging boron concentration, and instead modify the charge-carrier concentration by introducing compensating defects via high-energy ion irradiation. Superconductivity is completely suppressed when the number of defects is sufficient to compensate the hole concentration to below threshold. Furthermore, we show it is possible to recover the superconductivity by annealing the sample in vacuum to remove the compensating defects.

    Original languageEnglish
    Article number044016
    JournalPhysical Review Applied
    Volume10
    Issue number4
    DOIs
    Publication statusPublished - 2018 Oct 5

    Fingerprint

    boron
    diamonds
    irradiation
    superconductivity
    defects
    thresholds
    ion irradiation
    charge carriers
    critical temperature
    insulators
    vapor deposition
    broadband
    vacuum
    annealing
    metals
    energy

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond. / Creedon, D. L.; Jiang, Y.; Ganesan, K.; Stacey, A.; Kageura, Taisuke; Kawarada, Hiroshi; McCallum, J. C.; Johnson, B. C.; Prawer, S.; Jamieson, D. N.

    In: Physical Review Applied, Vol. 10, No. 4, 044016, 05.10.2018.

    Research output: Contribution to journalArticle

    Creedon, DL, Jiang, Y, Ganesan, K, Stacey, A, Kageura, T, Kawarada, H, McCallum, JC, Johnson, BC, Prawer, S & Jamieson, DN 2018, 'Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond', Physical Review Applied, vol. 10, no. 4, 044016. https://doi.org/10.1103/PhysRevApplied.10.044016
    Creedon, D. L. ; Jiang, Y. ; Ganesan, K. ; Stacey, A. ; Kageura, Taisuke ; Kawarada, Hiroshi ; McCallum, J. C. ; Johnson, B. C. ; Prawer, S. ; Jamieson, D. N. / Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond. In: Physical Review Applied. 2018 ; Vol. 10, No. 4.
    @article{3dbe1e0964d5448f9a49b3001142771a,
    title = "Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond",
    abstract = "Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemical vapor deposition where the boron concentration exceeds the critical concentration for the metal-to-insulator transition of nMIT4×1020/cm3. While the threshold carrier concentration for superconductivity is generally well established in the literature, it is unclear how well correlated higher critical temperatures are with increased boron concentration. Previous studies have generally compared several samples grown under different plasma conditions, or on substrates having different crystallographic orientations, in order to vary the incorporation of boron into the lattice. Here, we present a study of a single sample with unchanging boron concentration, and instead modify the charge-carrier concentration by introducing compensating defects via high-energy ion irradiation. Superconductivity is completely suppressed when the number of defects is sufficient to compensate the hole concentration to below threshold. Furthermore, we show it is possible to recover the superconductivity by annealing the sample in vacuum to remove the compensating defects.",
    author = "Creedon, {D. L.} and Y. Jiang and K. Ganesan and A. Stacey and Taisuke Kageura and Hiroshi Kawarada and McCallum, {J. C.} and Johnson, {B. C.} and S. Prawer and Jamieson, {D. N.}",
    year = "2018",
    month = "10",
    day = "5",
    doi = "10.1103/PhysRevApplied.10.044016",
    language = "English",
    volume = "10",
    journal = "Physical Review Applied",
    issn = "2331-7019",
    publisher = "American Physical Society",
    number = "4",

    }

    TY - JOUR

    T1 - Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond

    AU - Creedon, D. L.

    AU - Jiang, Y.

    AU - Ganesan, K.

    AU - Stacey, A.

    AU - Kageura, Taisuke

    AU - Kawarada, Hiroshi

    AU - McCallum, J. C.

    AU - Johnson, B. C.

    AU - Prawer, S.

    AU - Jamieson, D. N.

    PY - 2018/10/5

    Y1 - 2018/10/5

    N2 - Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemical vapor deposition where the boron concentration exceeds the critical concentration for the metal-to-insulator transition of nMIT4×1020/cm3. While the threshold carrier concentration for superconductivity is generally well established in the literature, it is unclear how well correlated higher critical temperatures are with increased boron concentration. Previous studies have generally compared several samples grown under different plasma conditions, or on substrates having different crystallographic orientations, in order to vary the incorporation of boron into the lattice. Here, we present a study of a single sample with unchanging boron concentration, and instead modify the charge-carrier concentration by introducing compensating defects via high-energy ion irradiation. Superconductivity is completely suppressed when the number of defects is sufficient to compensate the hole concentration to below threshold. Furthermore, we show it is possible to recover the superconductivity by annealing the sample in vacuum to remove the compensating defects.

    AB - Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemical vapor deposition where the boron concentration exceeds the critical concentration for the metal-to-insulator transition of nMIT4×1020/cm3. While the threshold carrier concentration for superconductivity is generally well established in the literature, it is unclear how well correlated higher critical temperatures are with increased boron concentration. Previous studies have generally compared several samples grown under different plasma conditions, or on substrates having different crystallographic orientations, in order to vary the incorporation of boron into the lattice. Here, we present a study of a single sample with unchanging boron concentration, and instead modify the charge-carrier concentration by introducing compensating defects via high-energy ion irradiation. Superconductivity is completely suppressed when the number of defects is sufficient to compensate the hole concentration to below threshold. Furthermore, we show it is possible to recover the superconductivity by annealing the sample in vacuum to remove the compensating defects.

    UR - http://www.scopus.com/inward/record.url?scp=85054549806&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=85054549806&partnerID=8YFLogxK

    U2 - 10.1103/PhysRevApplied.10.044016

    DO - 10.1103/PhysRevApplied.10.044016

    M3 - Article

    VL - 10

    JO - Physical Review Applied

    JF - Physical Review Applied

    SN - 2331-7019

    IS - 4

    M1 - 044016

    ER -