Kinetics of dimer-adatom-stacking-fault reconstruction on laser-quenched Si(111) surfaces

K. Shimada, T. Ishimaru, Takanobu Watanabe, T. Yamawaki, M. Osuka, T. Hoshino, I. Ohdomari

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    Nucleation and growth kinetics of dimer-adatom-stacking-fault (DAS) structures on laser-quenched Si(111) surfaces have been investigated by measuring the time evolution of DAS domain size distribution at 320-440°C with a scanning tunneling microscope (STM). The time evolution of the distribution suggests two different kinetics of DAS reconstruction. At a very early stage (immediately after laser irradiation), the surface contains many voids and formation of DAS structures is quite rapid. In the next stage (after the disappearance of the voids), the DAS domains develop at constant nucleation and growth rates in a measurable time scale. The temperature dependence of nucleation and growth rates is discussed based on a typical theory of the two-dimensional structural phase transition.

    Original languageEnglish
    Pages (from-to)2546-2551
    Number of pages6
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume62
    Issue number4
    Publication statusPublished - 2000

    Fingerprint

    Adatoms
    Stacking faults
    crystal defects
    Dimers
    adatoms
    dimers
    Lasers
    kinetics
    Nucleation
    lasers
    nucleation
    voids
    Growth kinetics
    Laser beam effects
    Microscopes
    Phase transitions
    microscopes
    Scanning
    temperature dependence
    irradiation

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Shimada, K., Ishimaru, T., Watanabe, T., Yamawaki, T., Osuka, M., Hoshino, T., & Ohdomari, I. (2000). Kinetics of dimer-adatom-stacking-fault reconstruction on laser-quenched Si(111) surfaces. Physical Review B - Condensed Matter and Materials Physics, 62(4), 2546-2551.

    Kinetics of dimer-adatom-stacking-fault reconstruction on laser-quenched Si(111) surfaces. / Shimada, K.; Ishimaru, T.; Watanabe, Takanobu; Yamawaki, T.; Osuka, M.; Hoshino, T.; Ohdomari, I.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 62, No. 4, 2000, p. 2546-2551.

    Research output: Contribution to journalArticle

    Shimada, K, Ishimaru, T, Watanabe, T, Yamawaki, T, Osuka, M, Hoshino, T & Ohdomari, I 2000, 'Kinetics of dimer-adatom-stacking-fault reconstruction on laser-quenched Si(111) surfaces', Physical Review B - Condensed Matter and Materials Physics, vol. 62, no. 4, pp. 2546-2551.
    Shimada, K. ; Ishimaru, T. ; Watanabe, Takanobu ; Yamawaki, T. ; Osuka, M. ; Hoshino, T. ; Ohdomari, I. / Kinetics of dimer-adatom-stacking-fault reconstruction on laser-quenched Si(111) surfaces. In: Physical Review B - Condensed Matter and Materials Physics. 2000 ; Vol. 62, No. 4. pp. 2546-2551.
    @article{946f1edfd21d474ba27f664afcdd37b1,
    title = "Kinetics of dimer-adatom-stacking-fault reconstruction on laser-quenched Si(111) surfaces",
    abstract = "Nucleation and growth kinetics of dimer-adatom-stacking-fault (DAS) structures on laser-quenched Si(111) surfaces have been investigated by measuring the time evolution of DAS domain size distribution at 320-440°C with a scanning tunneling microscope (STM). The time evolution of the distribution suggests two different kinetics of DAS reconstruction. At a very early stage (immediately after laser irradiation), the surface contains many voids and formation of DAS structures is quite rapid. In the next stage (after the disappearance of the voids), the DAS domains develop at constant nucleation and growth rates in a measurable time scale. The temperature dependence of nucleation and growth rates is discussed based on a typical theory of the two-dimensional structural phase transition.",
    author = "K. Shimada and T. Ishimaru and Takanobu Watanabe and T. Yamawaki and M. Osuka and T. Hoshino and I. Ohdomari",
    year = "2000",
    language = "English",
    volume = "62",
    pages = "2546--2551",
    journal = "Physical Review B-Condensed Matter",
    issn = "0163-1829",
    publisher = "American Institute of Physics Publising LLC",
    number = "4",

    }

    TY - JOUR

    T1 - Kinetics of dimer-adatom-stacking-fault reconstruction on laser-quenched Si(111) surfaces

    AU - Shimada, K.

    AU - Ishimaru, T.

    AU - Watanabe, Takanobu

    AU - Yamawaki, T.

    AU - Osuka, M.

    AU - Hoshino, T.

    AU - Ohdomari, I.

    PY - 2000

    Y1 - 2000

    N2 - Nucleation and growth kinetics of dimer-adatom-stacking-fault (DAS) structures on laser-quenched Si(111) surfaces have been investigated by measuring the time evolution of DAS domain size distribution at 320-440°C with a scanning tunneling microscope (STM). The time evolution of the distribution suggests two different kinetics of DAS reconstruction. At a very early stage (immediately after laser irradiation), the surface contains many voids and formation of DAS structures is quite rapid. In the next stage (after the disappearance of the voids), the DAS domains develop at constant nucleation and growth rates in a measurable time scale. The temperature dependence of nucleation and growth rates is discussed based on a typical theory of the two-dimensional structural phase transition.

    AB - Nucleation and growth kinetics of dimer-adatom-stacking-fault (DAS) structures on laser-quenched Si(111) surfaces have been investigated by measuring the time evolution of DAS domain size distribution at 320-440°C with a scanning tunneling microscope (STM). The time evolution of the distribution suggests two different kinetics of DAS reconstruction. At a very early stage (immediately after laser irradiation), the surface contains many voids and formation of DAS structures is quite rapid. In the next stage (after the disappearance of the voids), the DAS domains develop at constant nucleation and growth rates in a measurable time scale. The temperature dependence of nucleation and growth rates is discussed based on a typical theory of the two-dimensional structural phase transition.

    UR - http://www.scopus.com/inward/record.url?scp=4243245448&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=4243245448&partnerID=8YFLogxK

    M3 - Article

    AN - SCOPUS:4243245448

    VL - 62

    SP - 2546

    EP - 2551

    JO - Physical Review B-Condensed Matter

    JF - Physical Review B-Condensed Matter

    SN - 0163-1829

    IS - 4

    ER -