Label-free DNA sensors using ultrasensitive diamond field-effect transistors in solution

Kwang Soup Song, Gou Jun Zhang, Yusuke Nakamura, Kei Furukawa, Takahiro Hiraki, Jung Hoon Yang, Takashi Funatsu, Iwao Ohdomari, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    57 Citations (Scopus)

    Abstract

    Charge detection biosensors have recently become the focal point of biosensor research, especially field-effect-transistors (FETs) that combine compactness, low cost, high input, and low output impedances, to realize simple and stable in vivo diagnostic systems. However, critical evaluation of the possibility and limitations of charge detection of label-free DNA hybridization using silicon-based ion-sensitive FETs (ISFETs) has been introduced recently. The channel surface of these devices must be covered by relatively thick insulating layers (Si O2, Si3 N4, Al2 O3, or Ta2 O5) to protect against the invasion of ions from solution. These thick insulating layers are not suitable for charge detection of DNA and miniaturization, as the small capacitance of thick insulating layers restricts translation of the negative DNA charge from the electrolyte to the channel surface. To overcome these difficulties, thin-gate-insulator FET sensors should be developed. Here, we report diamond solution-gate FETs (SGFETs), where the DNA-immobilized channels are exposed directly to the electrolyte solution without gate insulator. These SGFETs operate stably within the large potential window of diamond (>3.0 V). Thus, the channel surface does not need to be covered by thick insulating layers, and DNA is immobilized directly through amine sites, which is a factor of 30 more sensitive than existing Si-ISFET DNA sensors. Diamond SGFETs can rapidly detect complementary, 3-mer mismatched (10 pM) and has a potential for the detection of single-base mismatched oligonucleotide DNA, without biological degradation by cyclically repeated hybridization and denature.

    Original languageEnglish
    Article number041919
    JournalPhysical Review E - Statistical, Nonlinear, and Soft Matter Physics
    Volume74
    Issue number4
    DOIs
    Publication statusPublished - 2006

    Fingerprint

    Field-effect Transistor
    Strombus or kite or diamond
    field effect transistors
    deoxyribonucleic acid
    diamonds
    Charge
    Sensor
    Biosensor
    Insulator
    sensors
    Electrolyte
    bioinstrumentation
    Invasion
    p.m.
    Capacitance
    Impedance
    Compactness
    Diagnostics
    insulators
    Silicon

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Condensed Matter Physics
    • Statistical and Nonlinear Physics
    • Mathematical Physics

    Cite this

    Label-free DNA sensors using ultrasensitive diamond field-effect transistors in solution. / Song, Kwang Soup; Zhang, Gou Jun; Nakamura, Yusuke; Furukawa, Kei; Hiraki, Takahiro; Yang, Jung Hoon; Funatsu, Takashi; Ohdomari, Iwao; Kawarada, Hiroshi.

    In: Physical Review E - Statistical, Nonlinear, and Soft Matter Physics, Vol. 74, No. 4, 041919, 2006.

    Research output: Contribution to journalArticle

    Song, Kwang Soup ; Zhang, Gou Jun ; Nakamura, Yusuke ; Furukawa, Kei ; Hiraki, Takahiro ; Yang, Jung Hoon ; Funatsu, Takashi ; Ohdomari, Iwao ; Kawarada, Hiroshi. / Label-free DNA sensors using ultrasensitive diamond field-effect transistors in solution. In: Physical Review E - Statistical, Nonlinear, and Soft Matter Physics. 2006 ; Vol. 74, No. 4.
    @article{cbf869f054f64aa99534a53682cb89ab,
    title = "Label-free DNA sensors using ultrasensitive diamond field-effect transistors in solution",
    abstract = "Charge detection biosensors have recently become the focal point of biosensor research, especially field-effect-transistors (FETs) that combine compactness, low cost, high input, and low output impedances, to realize simple and stable in vivo diagnostic systems. However, critical evaluation of the possibility and limitations of charge detection of label-free DNA hybridization using silicon-based ion-sensitive FETs (ISFETs) has been introduced recently. The channel surface of these devices must be covered by relatively thick insulating layers (Si O2, Si3 N4, Al2 O3, or Ta2 O5) to protect against the invasion of ions from solution. These thick insulating layers are not suitable for charge detection of DNA and miniaturization, as the small capacitance of thick insulating layers restricts translation of the negative DNA charge from the electrolyte to the channel surface. To overcome these difficulties, thin-gate-insulator FET sensors should be developed. Here, we report diamond solution-gate FETs (SGFETs), where the DNA-immobilized channels are exposed directly to the electrolyte solution without gate insulator. These SGFETs operate stably within the large potential window of diamond (>3.0 V). Thus, the channel surface does not need to be covered by thick insulating layers, and DNA is immobilized directly through amine sites, which is a factor of 30 more sensitive than existing Si-ISFET DNA sensors. Diamond SGFETs can rapidly detect complementary, 3-mer mismatched (10 pM) and has a potential for the detection of single-base mismatched oligonucleotide DNA, without biological degradation by cyclically repeated hybridization and denature.",
    author = "Song, {Kwang Soup} and Zhang, {Gou Jun} and Yusuke Nakamura and Kei Furukawa and Takahiro Hiraki and Yang, {Jung Hoon} and Takashi Funatsu and Iwao Ohdomari and Hiroshi Kawarada",
    year = "2006",
    doi = "10.1103/PhysRevE.74.041919",
    language = "English",
    volume = "74",
    journal = "Physical Review E - Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics",
    issn = "1063-651X",
    publisher = "American Physical Society",
    number = "4",

    }

    TY - JOUR

    T1 - Label-free DNA sensors using ultrasensitive diamond field-effect transistors in solution

    AU - Song, Kwang Soup

    AU - Zhang, Gou Jun

    AU - Nakamura, Yusuke

    AU - Furukawa, Kei

    AU - Hiraki, Takahiro

    AU - Yang, Jung Hoon

    AU - Funatsu, Takashi

    AU - Ohdomari, Iwao

    AU - Kawarada, Hiroshi

    PY - 2006

    Y1 - 2006

    N2 - Charge detection biosensors have recently become the focal point of biosensor research, especially field-effect-transistors (FETs) that combine compactness, low cost, high input, and low output impedances, to realize simple and stable in vivo diagnostic systems. However, critical evaluation of the possibility and limitations of charge detection of label-free DNA hybridization using silicon-based ion-sensitive FETs (ISFETs) has been introduced recently. The channel surface of these devices must be covered by relatively thick insulating layers (Si O2, Si3 N4, Al2 O3, or Ta2 O5) to protect against the invasion of ions from solution. These thick insulating layers are not suitable for charge detection of DNA and miniaturization, as the small capacitance of thick insulating layers restricts translation of the negative DNA charge from the electrolyte to the channel surface. To overcome these difficulties, thin-gate-insulator FET sensors should be developed. Here, we report diamond solution-gate FETs (SGFETs), where the DNA-immobilized channels are exposed directly to the electrolyte solution without gate insulator. These SGFETs operate stably within the large potential window of diamond (>3.0 V). Thus, the channel surface does not need to be covered by thick insulating layers, and DNA is immobilized directly through amine sites, which is a factor of 30 more sensitive than existing Si-ISFET DNA sensors. Diamond SGFETs can rapidly detect complementary, 3-mer mismatched (10 pM) and has a potential for the detection of single-base mismatched oligonucleotide DNA, without biological degradation by cyclically repeated hybridization and denature.

    AB - Charge detection biosensors have recently become the focal point of biosensor research, especially field-effect-transistors (FETs) that combine compactness, low cost, high input, and low output impedances, to realize simple and stable in vivo diagnostic systems. However, critical evaluation of the possibility and limitations of charge detection of label-free DNA hybridization using silicon-based ion-sensitive FETs (ISFETs) has been introduced recently. The channel surface of these devices must be covered by relatively thick insulating layers (Si O2, Si3 N4, Al2 O3, or Ta2 O5) to protect against the invasion of ions from solution. These thick insulating layers are not suitable for charge detection of DNA and miniaturization, as the small capacitance of thick insulating layers restricts translation of the negative DNA charge from the electrolyte to the channel surface. To overcome these difficulties, thin-gate-insulator FET sensors should be developed. Here, we report diamond solution-gate FETs (SGFETs), where the DNA-immobilized channels are exposed directly to the electrolyte solution without gate insulator. These SGFETs operate stably within the large potential window of diamond (>3.0 V). Thus, the channel surface does not need to be covered by thick insulating layers, and DNA is immobilized directly through amine sites, which is a factor of 30 more sensitive than existing Si-ISFET DNA sensors. Diamond SGFETs can rapidly detect complementary, 3-mer mismatched (10 pM) and has a potential for the detection of single-base mismatched oligonucleotide DNA, without biological degradation by cyclically repeated hybridization and denature.

    UR - http://www.scopus.com/inward/record.url?scp=33750470383&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=33750470383&partnerID=8YFLogxK

    U2 - 10.1103/PhysRevE.74.041919

    DO - 10.1103/PhysRevE.74.041919

    M3 - Article

    VL - 74

    JO - Physical Review E - Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics

    JF - Physical Review E - Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics

    SN - 1063-651X

    IS - 4

    M1 - 041919

    ER -