lambda /4-SHIFTED InGaAsP/InP DFB LASERS BY SIMULTANEOUS HOLOGRAPHIC EXPOSURE OF POSITIVE AND NEGATIVE PHOTORESISTS.

Katsuyuki Utaka, S. Akiba, K. Sakai, Yuichi Matsushima

Research output: Contribution to journalArticle

75 Citations (Scopus)

Abstract

lambda /4-shifted InGaAsP/InP DFB lasers were fabricated by a novel method, that is, simultaneous holographic exposure of positive and negative photoresists. The lambda /4-phase-shift in the first-order corrugations formed on an InP substrate was confirmed through SEM views and diffracted beam patterns. A strong resonance peak below the threshold and single-wavelength operation above it at the Bragg wavelength were observed.

Original languageEnglish
Pages (from-to)1008-1010
Number of pages3
JournalElectronics Letters
Volume20
Issue number24
Publication statusPublished - 1984 Jan 1
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this