Abstract
Langmuir-Blodgett (LB) deposition was employed to fabricate high-κ dielectric nanofilms of titania nanosheets. The LB-based layer-by-layer approach using an atomically flat SrRuO3 substrate is effective for the fabrication of atomically uniform and highly dense nanofilms. These films exhibited both high dielectric constant (K ∼ 123) and low leakage current density (J < 10-7 A cm-2) for thicknesses down to 5nm, while eliminating the size-effect problems encountered in current high-κ films. From analyses of interfacial structures by transmission electron microscopy and hard X-ray photoelectron spectroscopy, we have clarified that the films are composed of a well-ordered lamellar structure without an interfacial dead layer. According to first-principles calculations, a highly polarizable nature of titania nanosheets can bring improved dielectric properties, yielding high-κ values even in an ultrathin geometry (< nm).
| Original language | English |
|---|---|
| Pages (from-to) | 7556-7560 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 47 |
| Issue number | 9 PART 2 |
| DOIs | |
| Publication status | Published - 2008 Sep 19 |
| Externally published | Yes |
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Keywords
- High-κ dielectrics
- Langmuir-Blodgett deposition
- Titania nanosheet
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Langmuir-Blodgett fabrication of nanosheet-based dielectric films without an interfacial dead layer. / Osada, Minoru; Akatsuka, Kosho; Ebina, Yasuo; Kotani, Yoshinori; Ono, Kanta; Funakubo, Hiroshi; Ueda, Shigenori; Kobayashi, Keisuke; Takada, Kazunori; Sasaki, Takayoshi.
In: Japanese Journal of Applied Physics, Vol. 47, No. 9 PART 2, 19.09.2008, p. 7556-7560.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Langmuir-Blodgett fabrication of nanosheet-based dielectric films without an interfacial dead layer
AU - Osada, Minoru
AU - Akatsuka, Kosho
AU - Ebina, Yasuo
AU - Kotani, Yoshinori
AU - Ono, Kanta
AU - Funakubo, Hiroshi
AU - Ueda, Shigenori
AU - Kobayashi, Keisuke
AU - Takada, Kazunori
AU - Sasaki, Takayoshi
PY - 2008/9/19
Y1 - 2008/9/19
N2 - Langmuir-Blodgett (LB) deposition was employed to fabricate high-κ dielectric nanofilms of titania nanosheets. The LB-based layer-by-layer approach using an atomically flat SrRuO3 substrate is effective for the fabrication of atomically uniform and highly dense nanofilms. These films exhibited both high dielectric constant (K ∼ 123) and low leakage current density (J < 10-7 A cm-2) for thicknesses down to 5nm, while eliminating the size-effect problems encountered in current high-κ films. From analyses of interfacial structures by transmission electron microscopy and hard X-ray photoelectron spectroscopy, we have clarified that the films are composed of a well-ordered lamellar structure without an interfacial dead layer. According to first-principles calculations, a highly polarizable nature of titania nanosheets can bring improved dielectric properties, yielding high-κ values even in an ultrathin geometry (< nm).
AB - Langmuir-Blodgett (LB) deposition was employed to fabricate high-κ dielectric nanofilms of titania nanosheets. The LB-based layer-by-layer approach using an atomically flat SrRuO3 substrate is effective for the fabrication of atomically uniform and highly dense nanofilms. These films exhibited both high dielectric constant (K ∼ 123) and low leakage current density (J < 10-7 A cm-2) for thicknesses down to 5nm, while eliminating the size-effect problems encountered in current high-κ films. From analyses of interfacial structures by transmission electron microscopy and hard X-ray photoelectron spectroscopy, we have clarified that the films are composed of a well-ordered lamellar structure without an interfacial dead layer. According to first-principles calculations, a highly polarizable nature of titania nanosheets can bring improved dielectric properties, yielding high-κ values even in an ultrathin geometry (< nm).
KW - High-κ dielectrics
KW - Langmuir-Blodgett deposition
KW - Titania nanosheet
UR - http://www.scopus.com/inward/record.url?scp=55149088854&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=55149088854&partnerID=8YFLogxK
U2 - 10.1143/JJAP.47.7556
DO - 10.1143/JJAP.47.7556
M3 - Article
AN - SCOPUS:55149088854
VL - 47
SP - 7556
EP - 7560
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9 PART 2
ER -