Langmuir-Blodgett fabrication of nanosheet-based dielectric films without an interfacial dead layer

Minoru Osada, Kosho Akatsuka, Yasuo Ebina, Yoshinori Kotani, Kanta Ono, Hiroshi Funakubo, Shigenori Ueda, Keisuke Kobayashi, Kazunori Takada, Takayoshi Sasaki

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20 Citations (Scopus)

Abstract

Langmuir-Blodgett (LB) deposition was employed to fabricate high-κ dielectric nanofilms of titania nanosheets. The LB-based layer-by-layer approach using an atomically flat SrRuO3 substrate is effective for the fabrication of atomically uniform and highly dense nanofilms. These films exhibited both high dielectric constant (K ∼ 123) and low leakage current density (J < 10-7 A cm-2) for thicknesses down to 5nm, while eliminating the size-effect problems encountered in current high-κ films. From analyses of interfacial structures by transmission electron microscopy and hard X-ray photoelectron spectroscopy, we have clarified that the films are composed of a well-ordered lamellar structure without an interfacial dead layer. According to first-principles calculations, a highly polarizable nature of titania nanosheets can bring improved dielectric properties, yielding high-κ values even in an ultrathin geometry (< nm).

Original languageEnglish
Pages (from-to)7556-7560
Number of pages5
JournalJapanese Journal of Applied Physics
Volume47
Issue number9 PART 2
DOIs
Publication statusPublished - 2008 Sep 19
Externally publishedYes

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Keywords

  • High-κ dielectrics
  • Langmuir-Blodgett deposition
  • Titania nanosheet

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Osada, M., Akatsuka, K., Ebina, Y., Kotani, Y., Ono, K., Funakubo, H., Ueda, S., Kobayashi, K., Takada, K., & Sasaki, T. (2008). Langmuir-Blodgett fabrication of nanosheet-based dielectric films without an interfacial dead layer. Japanese Journal of Applied Physics, 47(9 PART 2), 7556-7560. https://doi.org/10.1143/JJAP.47.7556