Large area diamond selective nucleation based epitaxy

Jing Sheng Ma, Hiroyuki Yagyu, Akio Hiraki, Hiroshi Kawarada, Takao Yonehara

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    A uniform large area H2 plasma can be generated by a magneto-activated microwave plasma chemical vapour deposition (CVD) system. This plasma has been employed, instead of the previously used argon beam, in the diamond selective nucleation based epitaxy (SENTAXY) technique as the irradiation beam to fabricate a large area SENTAXY diamond array which has high potential to make good use of CVD diamond in semiconducting and optical devices. By using this nucleation control technique, an investigation focusing on CVD diamond nucleation sites has also been carried out via an ultrahigh voltage transmission electron microscope. It has been found that diamond preferentially nucleates on the area of the substrate with a high density of defects.

    Original languageEnglish
    Pages (from-to)192-197
    Number of pages6
    JournalThin Solid Films
    Volume206
    Issue number1-2
    DOIs
    Publication statusPublished - 1991 Dec 10

    Fingerprint

    Diamond
    Epitaxial growth
    epitaxy
    Diamonds
    Nucleation
    diamonds
    nucleation
    Chemical vapor deposition
    vapor deposition
    Plasmas
    UHV power transmission
    Argon
    Optical devices
    Electron microscopes
    electron microscopes
    Microwaves
    argon
    Irradiation
    microwaves
    Defects

    ASJC Scopus subject areas

    • Surfaces, Coatings and Films
    • Condensed Matter Physics
    • Surfaces and Interfaces

    Cite this

    Large area diamond selective nucleation based epitaxy. / Ma, Jing Sheng; Yagyu, Hiroyuki; Hiraki, Akio; Kawarada, Hiroshi; Yonehara, Takao.

    In: Thin Solid Films, Vol. 206, No. 1-2, 10.12.1991, p. 192-197.

    Research output: Contribution to journalArticle

    Ma, JS, Yagyu, H, Hiraki, A, Kawarada, H & Yonehara, T 1991, 'Large area diamond selective nucleation based epitaxy', Thin Solid Films, vol. 206, no. 1-2, pp. 192-197. https://doi.org/10.1016/0040-6090(91)90420-3
    Ma, Jing Sheng ; Yagyu, Hiroyuki ; Hiraki, Akio ; Kawarada, Hiroshi ; Yonehara, Takao. / Large area diamond selective nucleation based epitaxy. In: Thin Solid Films. 1991 ; Vol. 206, No. 1-2. pp. 192-197.
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