@inproceedings{3c5173b3b130485fbca42c063b0b6319,
title = "Large GaN p-n junction diodes of 3 mm in diameter on free-standing GaN substrates with high breakdown voltage",
abstract = "This report describes the first fabrication of GaN p-n junction diodes on free-standing GaN substrates with a 3mm diameter. For the diode of 3 mm in diameter, the specific on-resistance and the breakdown voltage was 124 mΩ·cm2 (at 4.0 V) and -450 V, respectively. Consequently, combination of materials used and device processing revealed a record fabricated device size with a high breakdown voltage and low forward leakage current in GaN vertical diodes.",
keywords = "Gallium compounds, High-temperature electronics, P-n junctions, Power semiconductor devices",
author = "Kazuki Nomoto and Tohru Nakamura and Naoki Kaneda and Toshihiro Kawano and Tadayoshi Tsuchiya and Tomoyoshi Mishima",
year = "2012",
month = jan,
day = "1",
doi = "10.4028/www.scientific.net/MSF.717-720.1299",
language = "English",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "1299--1302",
editor = "Devaty, {Robert P.} and Michael Dudley and Chow, {T. Paul} and Neudeck, {Philip G.}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
note = "14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
}