Large GaN p-n junction diodes of 3 mm in diameter on free-standing GaN substrates with high breakdown voltage

Kazuki Nomoto, Tohru Nakamura, Naoki Kaneda, Toshihiro Kawano, Tadayoshi Tsuchiya, Tomoyoshi Mishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This report describes the first fabrication of GaN p-n junction diodes on free-standing GaN substrates with a 3mm diameter. For the diode of 3 mm in diameter, the specific on-resistance and the breakdown voltage was 124 mΩ·cm2 (at 4.0 V) and -450 V, respectively. Consequently, combination of materials used and device processing revealed a record fabricated device size with a high breakdown voltage and low forward leakage current in GaN vertical diodes.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
EditorsRobert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
PublisherTrans Tech Publications Ltd
Pages1299-1302
Number of pages4
ISBN (Print)9783037854198
DOIs
Publication statusPublished - 2012 Jan 1
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: 2011 Sep 112011 Sep 16

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period11/9/1111/9/16

Keywords

  • Gallium compounds
  • High-temperature electronics
  • P-n junctions
  • Power semiconductor devices

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Nomoto, K., Nakamura, T., Kaneda, N., Kawano, T., Tsuchiya, T., & Mishima, T. (2012). Large GaN p-n junction diodes of 3 mm in diameter on free-standing GaN substrates with high breakdown voltage. In R. P. Devaty, M. Dudley, T. P. Chow, & P. G. Neudeck (Eds.), Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 1299-1302). (Materials Science Forum; Vol. 717-720). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.717-720.1299