Large GaN p-n junction diodes of 3 mm in diameter on free-standing GaN substrates with high breakdown voltage

Kazuki Nomoto, Tohru Nakamura, Naoki Kaneda, Toshihiro Kawano, Tadayoshi Tsuchiya, Tomoyoshi Mishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This report describes the first fabrication of GaN p-n junction diodes on free-standing GaN substrates with a 3mm diameter. For the diode of 3 mm in diameter, the specific on-resistance and the breakdown voltage was 124 mΩ·cm 2 (at 4.0 V) and -450 V, respectively. Consequently, combination of materials used and device processing revealed a record fabricated device size with a high breakdown voltage and low forward leakage current in GaN vertical diodes.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages1299-1302
Number of pages4
Volume717-720
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: 2011 Sep 112011 Sep 16

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)02555476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period11/9/1111/9/16

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Keywords

  • Gallium compounds
  • High-temperature electronics
  • P-n junctions
  • Power semiconductor devices

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Nomoto, K., Nakamura, T., Kaneda, N., Kawano, T., Tsuchiya, T., & Mishima, T. (2012). Large GaN p-n junction diodes of 3 mm in diameter on free-standing GaN substrates with high breakdown voltage. In Materials Science Forum (Vol. 717-720, pp. 1299-1302). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.1299