Large GaN p-n junction diodes of 3 mm in diameter on free-standing GaN substrates with high breakdown voltage

Kazuki Nomoto*, Tohru Nakamura, Naoki Kaneda, Toshihiro Kawano, Tadayoshi Tsuchiya, Tomoyoshi Mishima

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

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