Large lateral modulation in InAs/GaAs in-plane strained superlattice on slightly misoriented (110) InP substrate

Yuji Nishikawa, Yoshiaki Nakata, Atsushi Tackeuchi, Shunichi Muto, Osamu Wada

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4 Citations (Scopus)


An InAs/GaAs in-plane strained superlattice (IPSSL) grown by molecular beam epitaxy (MBE) is investigated using photoluminescence (PL) measurements. The polarization-dependent PL at 0.77 eV (77 K) with a full width at half maximum of 25 meV indicates that a laterally modulated structure is grown. With the use of the empirical nearest-neighbor sp3s* tight-binding energy band calculation for the IPSSL, we deduced that an In0.74Ga0.74As/ In0.26Ga0.74As IPSSL was actually grown. This reveals that an indium composition modulation ∆x of about 0.48 was achieved, which is more than twice as large as that in in-plane superlattices using other material systems.

Original languageEnglish
Pages (from-to)L915-L917
JournalJapanese journal of applied physics
Issue number7
Publication statusPublished - 1995 Jul



  • (110) InP substrate
  • In-plane superlattice
  • Laterally modulated structure
  • Strained superlattice
  • Tight-binding approximation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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