Large lateral modulation in InAs/GaAs in-plane strained superlattice on slightly misoriented (110) InP substrate

Yuji Nishikawa, Yoshiaki Nakata, Atsushi Tackeuchi, Shunichi Muto, Osamu Wada

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

An InAs/GaAs in-plane strained superlattice (IPSSL) grown by molecular beam epitaxy (MBE) is investigated using photoluminescence (PL) measurements. The polarization-dependent PL at 0.77 eV (77 K) with a full width at half maximum of 25 meV indicates that a laterally modulated structure is grown. With the use of the empirical nearest-neighbor sp3s* tight-binding energy band calculation for the IPSSL, we deduced that an In0.74Ga0.26As/In0.26Ga0.74As IPSSL was actually grown. This reveals that an indium composition modulation Δx of about 0.48 was achieved, which is more than twice as large as that in in-plane superlattices using other material systems.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume34
Issue number7 B
Publication statusPublished - 1995
Externally publishedYes

Fingerprint

Photoluminescence
Modulation
photoluminescence
modulation
Superlattices
Substrates
Full width at half maximum
Binding energy
Molecular beam epitaxy
Band structure
Indium
energy bands
indium
superlattices
molecular beam epitaxy
binding energy
Polarization
polarization
Chemical analysis

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Large lateral modulation in InAs/GaAs in-plane strained superlattice on slightly misoriented (110) InP substrate. / Nishikawa, Yuji; Nakata, Yoshiaki; Tackeuchi, Atsushi; Muto, Shunichi; Wada, Osamu.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 34, No. 7 B, 1995.

Research output: Contribution to journalArticle

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AU - Muto, Shunichi

AU - Wada, Osamu

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