Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In0.75Ga0.25As/In0.75Al0.25As heterojunctions

Y. Sato, Tomohiro Kita, S. Gozu, S. Yamada

Research output: Contribution to journalArticle

198 Citations (Scopus)

Abstract

Amounts of spontaneous spin splittings were estimated from low-temperature magnetoresistances in two-dimensional electron gases created at In0.75Ga0.25As/In0.75Al0.25As heterojunctions under a gate bias. Typical sheet electron densities and mobilities in the raw wafers were ∼1.0×1012/cm2 and 2-5×105 cm2/V s at 1.5 K, respectively. A maximum spin-orbit coupling constant αzero of ∼30 (×10-12eV m) was obtained for the van der Pauw sample. In gated Hall-bar samples, a decrease in the αzero value with decreasing gate voltage (Vg) was first confirmed in a normal heterojunction. The main origin for such a large αzero, which is a few times larger than any previously reported, was found to be a structure-dependent so-called interface contribution in the Rashba term.

Original languageEnglish
Pages (from-to)8017-8021
Number of pages5
JournalJournal of Applied Physics
Volume89
Issue number12
DOIs
Publication statusPublished - 2001 Jun 1
Externally publishedYes

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electron gas
heterojunctions
electron mobility
wafers
orbits
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In0.75Ga0.25As/In0.75Al0.25As heterojunctions. / Sato, Y.; Kita, Tomohiro; Gozu, S.; Yamada, S.

In: Journal of Applied Physics, Vol. 89, No. 12, 01.06.2001, p. 8017-8021.

Research output: Contribution to journalArticle

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