Large thermal Hall coefficient in bismuth

Wataru Kobayashi; Y. Koizumi; Y. Moritomo

doi:10.1063/1.3673562

Large thermal Hall coefficient in bismuth

Wataru Kobayashi, Y. Koizumi, Y. Moritomo

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.

Original language	English
Article number	011903
Journal	Applied Physics Letters
Volume	100
Issue number	1
DOIs	https://doi.org/10.1063/1.3673562
Publication status	Published - 2012 Jan 2
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Kobayashi, W., Koizumi, Y., & Moritomo, Y. (2012). Large thermal Hall coefficient in bismuth. Applied Physics Letters, 100(1), [011903]. https://doi.org/10.1063/1.3673562

@article{6867512d18a74c479b3f4b0be462a262,

title = "Large thermal Hall coefficient in bismuth",

abstract = "We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.",

author = "Wataru Kobayashi and Y. Koizumi and Y. Moritomo",

year = "2012",

month = jan,

day = "2",

doi = "10.1063/1.3673562",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Large thermal Hall coefficient in bismuth

AU - Kobayashi, Wataru

AU - Koizumi, Y.

AU - Moritomo, Y.

PY - 2012/1/2

Y1 - 2012/1/2

N2 - We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.

AB - We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=84855531965&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84855531965&partnerID=8YFLogxK

U2 - 10.1063/1.3673562

DO - 10.1063/1.3673562

M3 - Article

AN - SCOPUS:84855531965

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

M1 - 011903

ER -