Abstract
We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.
Original language | English |
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Article number | 011903 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2012 Jan 2 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)