Large thermal Hall coefficient in bismuth

Wataru Kobayashi, Y. Koizumi, Y. Moritomo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.

Original languageEnglish
Article number011903
JournalApplied Physics Letters
Volume100
Issue number1
DOIs
Publication statusPublished - 2012 Jan 2
Externally publishedYes

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bismuth
Hall effect
thermal conductivity
routes
heat
electrical resistivity
single crystals
electronics
magnetic fields

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kobayashi, W., Koizumi, Y., & Moritomo, Y. (2012). Large thermal Hall coefficient in bismuth. Applied Physics Letters, 100(1), [011903]. https://doi.org/10.1063/1.3673562

Large thermal Hall coefficient in bismuth. / Kobayashi, Wataru; Koizumi, Y.; Moritomo, Y.

In: Applied Physics Letters, Vol. 100, No. 1, 011903, 02.01.2012.

Research output: Contribution to journalArticle

Kobayashi, W, Koizumi, Y & Moritomo, Y 2012, 'Large thermal Hall coefficient in bismuth', Applied Physics Letters, vol. 100, no. 1, 011903. https://doi.org/10.1063/1.3673562
Kobayashi W, Koizumi Y, Moritomo Y. Large thermal Hall coefficient in bismuth. Applied Physics Letters. 2012 Jan 2;100(1). 011903. https://doi.org/10.1063/1.3673562
Kobayashi, Wataru ; Koizumi, Y. ; Moritomo, Y. / Large thermal Hall coefficient in bismuth. In: Applied Physics Letters. 2012 ; Vol. 100, No. 1.
@article{6867512d18a74c479b3f4b0be462a262,
title = "Large thermal Hall coefficient in bismuth",
abstract = "We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.",
author = "Wataru Kobayashi and Y. Koizumi and Y. Moritomo",
year = "2012",
month = "1",
day = "2",
doi = "10.1063/1.3673562",
language = "English",
volume = "100",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - Large thermal Hall coefficient in bismuth

AU - Kobayashi, Wataru

AU - Koizumi, Y.

AU - Moritomo, Y.

PY - 2012/1/2

Y1 - 2012/1/2

N2 - We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.

AB - We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=84855531965&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84855531965&partnerID=8YFLogxK

U2 - 10.1063/1.3673562

DO - 10.1063/1.3673562

M3 - Article

AN - SCOPUS:84855531965

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

M1 - 011903

ER -