Large thermal Hall coefficient in bismuth

Wataru Kobayashi; Y. Koizumi; Y. Moritomo

doi:10.1063/1.3673562

Large thermal Hall coefficient in bismuth

Wataru Kobayashi^*, Y. Koizumi, Y. Moritomo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.

Original language	English
Article number	011903
Journal	Applied Physics Letters
Volume	100
Issue number	1
DOIs	https://doi.org/10.1063/1.3673562
Publication status	Published - 2012 Jan 2
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3673562

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title = "Large thermal Hall coefficient in bismuth",

abstract = "We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.",

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AU - Moritomo, Y.

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AB - We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.

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Large thermal Hall coefficient in bismuth

Abstract

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