Large thermal Hall coefficient in bismuth

Wataru Kobayashi, Y. Koizumi, Y. Moritomo

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Abstract

We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.

Original languageEnglish
Article number011903
JournalApplied Physics Letters
Volume100
Issue number1
DOIs
Publication statusPublished - 2012 Jan 2
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kobayashi, W., Koizumi, Y., & Moritomo, Y. (2012). Large thermal Hall coefficient in bismuth. Applied Physics Letters, 100(1), [011903]. https://doi.org/10.1063/1.3673562