Abstract
We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.
| Original language | English |
|---|---|
| Article number | 011903 |
| Journal | Applied Physics Letters |
| Volume | 100 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2012 Jan 2 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Large thermal Hall coefficient in bismuth. / Kobayashi, Wataru; Koizumi, Y.; Moritomo, Y.
In: Applied Physics Letters, Vol. 100, No. 1, 011903, 02.01.2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Large thermal Hall coefficient in bismuth
AU - Kobayashi, Wataru
AU - Koizumi, Y.
AU - Moritomo, Y.
PY - 2012/1/2
Y1 - 2012/1/2
N2 - We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.
AB - We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.
UR - http://www.scopus.com/inward/record.url?scp=84855531965&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84855531965&partnerID=8YFLogxK
U2 - 10.1063/1.3673562
DO - 10.1063/1.3673562
M3 - Article
AN - SCOPUS:84855531965
VL - 100
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 1
M1 - 011903
ER -