Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond

K. Ishizaka, R. Eguchi, S. Tsuda, T. Kiss, T. Shimojima, T. Yokoya, S. Shin, T. Togashi, S. Watanabe, C. T. Chen, C. Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, Hiroshi Kawarada

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    Abstract

    We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor-metal boundary, together with the characteristic structures at 150 × n meV possibly due to the strong electron-lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron-lattice coupling and the superconductivity in doped diamond.

    Original languageEnglish
    Pages (from-to)17-21
    Number of pages5
    JournalScience and Technology of Advanced Materials
    Volume7
    Issue numberSUPPL. 1
    DOIs
    Publication statusPublished - 2006

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    ASJC Scopus subject areas

    • Materials Science(all)

    Cite this

    Ishizaka, K., Eguchi, R., Tsuda, S., Kiss, T., Shimojima, T., Yokoya, T., Shin, S., Togashi, T., Watanabe, S., Chen, C. T., Zhang, C. Q., Takano, Y., Nagao, M., Sakaguchi, I., Takenouchi, T., & Kawarada, H. (2006). Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond. Science and Technology of Advanced Materials, 7(SUPPL. 1), 17-21. https://doi.org/10.1016/j.stam.2005.11.002