Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond

K. Ishizaka*, R. Eguchi, S. Tsuda, T. Kiss, T. Shimojima, T. Yokoya, S. Shin, T. Togashi, S. Watanabe, C. T. Chen, C. Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor-metal boundary, together with the characteristic structures at 150 × n meV possibly due to the strong electron-lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron-lattice coupling and the superconductivity in doped diamond.

Original languageEnglish
Pages (from-to)17-21
Number of pages5
JournalScience and Technology of Advanced Materials
Issue numberSUPPL. 1
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Materials Science(all)


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