We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor-metal boundary, together with the characteristic structures at 150 × n meV possibly due to the strong electron-lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron-lattice coupling and the superconductivity in doped diamond.
|Number of pages||5|
|Journal||Science and Technology of Advanced Materials|
|Issue number||SUPPL. 1|
|Publication status||Published - 2006|
ASJC Scopus subject areas
- Materials Science(all)