Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond

K. Ishizaka; R. Eguchi; S. Tsuda; T. Kiss; T. Shimojima; T. Yokoya; S. Shin; T. Togashi; S. Watanabe; C. T. Chen; C. Q. Zhang; Y. Takano; M. Nagao; I. Sakaguchi; T. Takenouchi; H. Kawarada

doi:10.1016/j.stam.2005.11.002

Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond

K. Ishizaka^*, R. Eguchi, S. Tsuda, T. Kiss, T. Shimojima, T. Yokoya, S. Shin, T. Togashi, S. Watanabe, C. T. Chen, C. Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor-metal boundary, together with the characteristic structures at 150 × n meV possibly due to the strong electron-lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below T_c indicative of a superconducting gap opening. We discuss the electron-lattice coupling and the superconductivity in doped diamond.

Original language	English
Pages (from-to)	17-21
Number of pages	5
Journal	Science and Technology of Advanced Materials
Volume	7
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.stam.2005.11.002
Publication status	Published - 2006

ASJC Scopus subject areas

Materials Science(all)

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10.1016/j.stam.2005.11.002

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Ishizaka, K., Eguchi, R., Tsuda, S., Kiss, T., Shimojima, T., Yokoya, T., Shin, S., Togashi, T., Watanabe, S., Chen, C. T., Zhang, C. Q., Takano, Y., Nagao, M., Sakaguchi, I., Takenouchi, T., & Kawarada, H. (2006). Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond. Science and Technology of Advanced Materials, 7(SUPPL. 1), 17-21. https://doi.org/10.1016/j.stam.2005.11.002

Ishizaka, K, Eguchi, R, Tsuda, S, Kiss, T, Shimojima, T, Yokoya, T, Shin, S, Togashi, T, Watanabe, S, Chen, CT, Zhang, CQ, Takano, Y, Nagao, M, Sakaguchi, I, Takenouchi, T & Kawarada, H 2006, 'Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond', Science and Technology of Advanced Materials, vol. 7, no. SUPPL. 1, pp. 17-21. https://doi.org/10.1016/j.stam.2005.11.002

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abstract = "We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor-metal boundary, together with the characteristic structures at 150 × n meV possibly due to the strong electron-lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron-lattice coupling and the superconductivity in doped diamond.",

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T1 - Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond

AU - Ishizaka, K.

AU - Eguchi, R.

AU - Tsuda, S.

AU - Kiss, T.

AU - Shimojima, T.

AU - Yokoya, T.

AU - Shin, S.

AU - Togashi, T.

AU - Watanabe, S.

AU - Chen, C. T.

AU - Zhang, C. Q.

AU - Takano, Y.

AU - Nagao, M.

AU - Sakaguchi, I.

AU - Takenouchi, T.

AU - Kawarada, H.

PY - 2006

Y1 - 2006

N2 - We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor-metal boundary, together with the characteristic structures at 150 × n meV possibly due to the strong electron-lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron-lattice coupling and the superconductivity in doped diamond.

AB - We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor-metal boundary, together with the characteristic structures at 150 × n meV possibly due to the strong electron-lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron-lattice coupling and the superconductivity in doped diamond.

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JO - Science and Technology of Advanced Materials

JF - Science and Technology of Advanced Materials

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ER -

Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond

Abstract

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