Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond

K. Ishizaka, R. Eguchi, S. Tsuda, T. Kiss, T. Shimojima, T. Yokoya, S. Shin, T. Togashi, S. Watanabe, C. T. Chen, C. Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor-metal boundary, together with the characteristic structures at 150 × n meV possibly due to the strong electron-lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron-lattice coupling and the superconductivity in doped diamond.

Original languageEnglish
Pages (from-to)17-21
Number of pages5
JournalScience and Technology of Advanced Materials
Volume7
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2006 Nov 29

ASJC Scopus subject areas

  • Materials Science(all)

Fingerprint Dive into the research topics of 'Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond'. Together they form a unique fingerprint.

  • Cite this

    Ishizaka, K., Eguchi, R., Tsuda, S., Kiss, T., Shimojima, T., Yokoya, T., Shin, S., Togashi, T., Watanabe, S., Chen, C. T., Zhang, C. Q., Takano, Y., Nagao, M., Sakaguchi, I., Takenouchi, T., & Kawarada, H. (2006). Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond. Science and Technology of Advanced Materials, 7(SUPPL. 1), 17-21. https://doi.org/10.1016/j.stam.2005.11.002