Laser-power dependence of absorption changes in Ge-doped SiO2 glass induced by a KrF excimer laser

Makoto Fujimaki, Kanta Yagi, Yoshimichi Ohki, Hiroyuki Nishikawa, Koichi Awazu

    Research output: Contribution to journalArticle

    28 Citations (Scopus)

    Abstract

    The generation mechanism of the absorption changes, which cause a photorefractive change through the Kramers-Kronig relation in Ge-doped SiO2 glass, has not been clarified yet. In the present paper, we examined the laser-power dependence of the absorption changes around 5 eV, induced by a KrF excimer laser. The induced absorption around 5 eV is composed of three different components, centering at 4.50, 5.08, and 5.80 eV. The increasing behavior of each absorption component depends strongly on the energy density. The three absorption components reach different saturation levels, depending on the energy density. Furthermore, the absorption induced by a high-power KrF excimer laser is bleached by a laser, the energy density of which is about one-twentieth of the inducing laser. Combining the results of mathematical analysis, it was found that a two-photon process and a one-photon process are, respectively, involved with the induction and the bleach of each absorption. It was also found that the precursor defect, which causes the absorption change, is of an oxygen-deficient type.

    Original languageEnglish
    Pages (from-to)9859-9862
    Number of pages4
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume53
    Issue number15
    Publication statusPublished - 1996 Apr 15

    Fingerprint

    Excimer lasers
    excimer lasers
    Glass
    Lasers
    glass
    Two photon processes
    Kramers-Kronig relations
    lasers
    High power lasers
    flux density
    Photons
    Oxygen
    Defects
    applications of mathematics
    causes
    photons
    high power lasers
    induction
    saturation
    defects

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Laser-power dependence of absorption changes in Ge-doped SiO2 glass induced by a KrF excimer laser. / Fujimaki, Makoto; Yagi, Kanta; Ohki, Yoshimichi; Nishikawa, Hiroyuki; Awazu, Koichi.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 53, No. 15, 15.04.1996, p. 9859-9862.

    Research output: Contribution to journalArticle

    Fujimaki, Makoto ; Yagi, Kanta ; Ohki, Yoshimichi ; Nishikawa, Hiroyuki ; Awazu, Koichi. / Laser-power dependence of absorption changes in Ge-doped SiO2 glass induced by a KrF excimer laser. In: Physical Review B - Condensed Matter and Materials Physics. 1996 ; Vol. 53, No. 15. pp. 9859-9862.
    @article{38e4ad1ed1354c34a29ade814ca03e63,
    title = "Laser-power dependence of absorption changes in Ge-doped SiO2 glass induced by a KrF excimer laser",
    abstract = "The generation mechanism of the absorption changes, which cause a photorefractive change through the Kramers-Kronig relation in Ge-doped SiO2 glass, has not been clarified yet. In the present paper, we examined the laser-power dependence of the absorption changes around 5 eV, induced by a KrF excimer laser. The induced absorption around 5 eV is composed of three different components, centering at 4.50, 5.08, and 5.80 eV. The increasing behavior of each absorption component depends strongly on the energy density. The three absorption components reach different saturation levels, depending on the energy density. Furthermore, the absorption induced by a high-power KrF excimer laser is bleached by a laser, the energy density of which is about one-twentieth of the inducing laser. Combining the results of mathematical analysis, it was found that a two-photon process and a one-photon process are, respectively, involved with the induction and the bleach of each absorption. It was also found that the precursor defect, which causes the absorption change, is of an oxygen-deficient type.",
    author = "Makoto Fujimaki and Kanta Yagi and Yoshimichi Ohki and Hiroyuki Nishikawa and Koichi Awazu",
    year = "1996",
    month = "4",
    day = "15",
    language = "English",
    volume = "53",
    pages = "9859--9862",
    journal = "Physical Review B-Condensed Matter",
    issn = "0163-1829",
    publisher = "American Institute of Physics Publising LLC",
    number = "15",

    }

    TY - JOUR

    T1 - Laser-power dependence of absorption changes in Ge-doped SiO2 glass induced by a KrF excimer laser

    AU - Fujimaki, Makoto

    AU - Yagi, Kanta

    AU - Ohki, Yoshimichi

    AU - Nishikawa, Hiroyuki

    AU - Awazu, Koichi

    PY - 1996/4/15

    Y1 - 1996/4/15

    N2 - The generation mechanism of the absorption changes, which cause a photorefractive change through the Kramers-Kronig relation in Ge-doped SiO2 glass, has not been clarified yet. In the present paper, we examined the laser-power dependence of the absorption changes around 5 eV, induced by a KrF excimer laser. The induced absorption around 5 eV is composed of three different components, centering at 4.50, 5.08, and 5.80 eV. The increasing behavior of each absorption component depends strongly on the energy density. The three absorption components reach different saturation levels, depending on the energy density. Furthermore, the absorption induced by a high-power KrF excimer laser is bleached by a laser, the energy density of which is about one-twentieth of the inducing laser. Combining the results of mathematical analysis, it was found that a two-photon process and a one-photon process are, respectively, involved with the induction and the bleach of each absorption. It was also found that the precursor defect, which causes the absorption change, is of an oxygen-deficient type.

    AB - The generation mechanism of the absorption changes, which cause a photorefractive change through the Kramers-Kronig relation in Ge-doped SiO2 glass, has not been clarified yet. In the present paper, we examined the laser-power dependence of the absorption changes around 5 eV, induced by a KrF excimer laser. The induced absorption around 5 eV is composed of three different components, centering at 4.50, 5.08, and 5.80 eV. The increasing behavior of each absorption component depends strongly on the energy density. The three absorption components reach different saturation levels, depending on the energy density. Furthermore, the absorption induced by a high-power KrF excimer laser is bleached by a laser, the energy density of which is about one-twentieth of the inducing laser. Combining the results of mathematical analysis, it was found that a two-photon process and a one-photon process are, respectively, involved with the induction and the bleach of each absorption. It was also found that the precursor defect, which causes the absorption change, is of an oxygen-deficient type.

    UR - http://www.scopus.com/inward/record.url?scp=0000684924&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0000684924&partnerID=8YFLogxK

    M3 - Article

    VL - 53

    SP - 9859

    EP - 9862

    JO - Physical Review B-Condensed Matter

    JF - Physical Review B-Condensed Matter

    SN - 0163-1829

    IS - 15

    ER -